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Datasheet: CM100TU-24F (Powerex Power Semiconductors)

Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts

 

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Powerex Power Semiconductors
1
Trench Gate Design
Six IGBTMODTM
50 Amperes/1200 Volts
CM50TU-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
1
Dimensions
Inches
Millimeters
A
4.02
102.0
B
3.58
91.0
C
1.14 +0.04/-0.02 29.0 +1.0/-0.5
D
3.15
0.01
80.0
0.25
E
2.91
0.01
74.0
0.25
F
0.16
4.0
G
1.02
26.0
H
0.31
8.1
J
0.79
20.0
K
0.39
10.0
L
0.43
11.0
Dimensions
Inches
Millimeters
M
0.47
11.85
N
0.75
19.1
P
0.74
18.7
Q
1.55
39.3
R
0.05
1.25
S
M4
M4
T 0.22 Dia. 5.5 Dia.
U
0.02
0.5
V
0.12
3.05
W
0.02
0.5
X
0.110
2.79
Description:
Powerex IGBTMODTM Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
UPS
Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM50TU-24F is a
1200V (V
CES
), 50 Ampere Six-
IGBT IGBTMODTM Power Module.
Current Rating
V
CES
Type
Amperes
Volts (x 50)
CM
50
24
V
J
D
J
L
L
N
N
A
L
C
H
G
F
K
GVP
EUN
N
E
B
U
GUN
L
GUP EUP
N
CM
S - NUTS (5 TYP)
K
J
Q
GWN
V
W
GVN EVN
EWN
R
EWP
M
P
N
L
EVP
L
GWP
P
T (4 TYP.)
W - THICK x X - WIDE
TAB (12 PLACES)
RTC
RTC
RTC
RTC
RTC
RTC
A
GUP
EUP
GUN
EUN
N
P
U
V
EVN
GVN
EVP
GVP
W
EWN
GWN
EWP
GWP
TC
MEASURING
POINT
TC
MEASURING
POINT
2
CM50TU-24F
Trench Gate Design Six IGBTMODTM
50 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM50TU-24F
Units
Junction Temperature
T
j
-40 to 150
C
Storage Temperature
T
stg
-40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
20
Volts
Collector Current (T
c
= 25
C)
I
C
50
Amperes
Peak Collector Current (T
j
150
C)
I
CM
100*
Amperes
Emitter Current**
I
E
50
Amperes
Peak Emitter Current**
I
EM
100*
Amperes
Maximum Collector Dissipation (T
j
< 150
C)
P
c
320
Watts
Mounting Torque, M4 Main Terminal
15
in-lb
Mounting Torque, M5 Mounting
31
in-lb
Weight
570
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Volts
Static Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
1
mA
Gate Leakage Voltage
I
GES
V
GE
= V
GES
, V
CE
= 0V
20
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 5.0mA, V
CE
= 10V
5
6
7
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 50A, V
GE
= 15V, T
j
= 25
C
1.8
2.4
Volts
I
C
= 50A, V
GE
= 15V, T
j
= 125
C
1.9
Volts
Total Gate Charge
Q
G
V
CC
= 600V, I
C
= 50A, V
GE
= 15V
550
nC
Emitter-Collector Voltage**
V
EC
I
E
= 50A, V
GE
= 0V
3.2
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
3
CM50TU-24F
Trench Gate Design Six IGBTMODTM
50 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
20
nf
Output Capacitance
C
oes
V
CE
= 10V, V
GE
= 0V
0.85
nf
Reverse Transfer Capacitance
C
res
0.5
nf
Inductive
Turn-on Delay Time
t
d(on)
V
CC
= 600V, I
C
= 50A,
100
ns
Load
Rise Time
t
r
V
GE1
= V
GE2
= 15V,
50
ns
Switch
Turn-off Delay Time
t
d(off)
R
G
= 6.3 ,
300
ns
Times
Fall Time
t
f
Inductive Load
300
ns
Diode Reverse Recovery Time**
t
rr
Switching Operation
150
ns
Diode Reverse Recovery Charge**
Q
rr
I
E
= 50A,
2.1
C
Thermal and Mechanical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT 1/6 Module, T
c
Reference
0.39
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
R
th(j-c)
D
Per FWDi 1/6 Module, T
c
Reference
0.70
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
R
th(j-c)
'Q
Per IGBT 1/6 Module,
0.26
C/W
T
c
Reference Point Under Chip
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.018
C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
4
CM50TU-24F
Trench Gate Design Six IGBTMODTM
50 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)

COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
60
20
0
40
80
100
0
1
2
3
4
COLLECTOR-CURRENT, I
C
, (AMPERES)

COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.0
0
20
40
60
80
2.0
2.5
1.5
1.0
0.5
0
100
V
GE
= 15V
T
j
= 25
C
T
j
= 125
C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
4
8
12
16
20
4
3
2
1
0
T
j
= 25
C
I
C
= 20A
I
C
= 100A
I
C
= 50A
0
0.5
1.0
1.5
2.5
2.0
3.0
10
-1
10
0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
1
10
2
EMITTER CURRENT, I
E
, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)

CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
10
1
V
GE
= 0V
C
ies
C
oes
C
res
GATE CHARGE, Q
G
, (nC)

GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
16
12
8
4
0
200
400
600
800
I
C
= 50A
V
CC
= 600V
V
CC
= 400V
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
0
10
1
10
2
10
2
10
1
10
0
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V
CC
= 600V
V
GE
=
15V
R
G
= 6.3
T
j
= 125
C
Inductive Load
t
d(off)
t
d(on)
t
r
t
f
EMITTER CURRENT, I
E
, (AMPERES)

REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
2
10
0
10
1
10
2
10
1
10
0
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
t
rr
I
rr
V
CC
= 600V
V
GE
=
15V
R
G
= 6.3
T
j
= 25
C
Inductive Load
10
8.5
9
9.5
11
15
V
GE
= 20V
T
j
= 25
o
C
8
T
j
= 25
C
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(
j
-
c
)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
10
-3
Z
th
= R
th
(NORMALIZED VALUE)
Per Unit Base
R
th(j-c)
= 0.39
C/W (IGBT)
R
th(j-c)
= 0.7
C/W (FWDi)
Single Pulse
T
C
= 25
C
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