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Datasheet: BS08D (Powerex Power Semiconductors)

Silicon Bilateral Switch

 

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Powerex Power Semiconductors
Feb.1999
FS30VS-06
OUTLINE DRAWING
Dimensions in mm
TO-220S
MITSUBISHI Nch POWER MOSFET
FS30VS-06
HIGH-SPEED SWITCHING USE
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
60
20
30
120
30
30
120
45
55 ~ +150
55 ~ +150
1.2
V
GS
= 0V
V
DS
= 0V
L = 100
H
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
V
A
A
A
A
A
W
C
C
g
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
--
Symbol
MAXIMUM RATINGS
(Tc = 25
C)
Parameter
Conditions
Ratings
Unit
10V DRIVE
V
DSS ..................................................................................
60V
r
DS (ON) (MAX) ..............................................................
30m
I
D .........................................................................................
30A
Integrated Fast Recovery Diode (TYP.)
..............
65ns
10.5MAX.
1.3
1.5MAX.
q
w
e
r
4.5
0
+0.3
0
3.0
+0.3
0.5
1
5
0.8
8.6
0.3
9.8
0.5
1.5MAX.
(1.5)
0.5
4.5
2.6
0.4
B
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
w r
q
e
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30VS-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25
C)
0
10
20
30
40
50
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
10
0
3
5
7
10
1
2
3
5
7
10
2
2
3
2
3
5
7
10
0
5 7
2
10
1
3 5 7
2
10
2
3 5 7
3
3
2
tw = 10
m
s
T
C
= 25C
Single Pulse
100
m
s
10ms
1ms
DC
0
10
20
30
40
50
0
2
4
6
8
10
V
GS
= 20V
6V
4V
5V
T
C
= 25C
Pulse Test
10V
P
D
= 45W
0
6
12
18
24
30
0
1
2
3
4
5
4V
5V
T
C
= 25C
Pulse Test
V
GS
= 20V
P
D
= 45W
6V
10V
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
V
A
mA
V
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
C/W
ns
60
--
--
2.0
--
--
14
--
--
--
--
--
--
--
--
--
--
--
--
--
3.0
23
0.345
20
1250
310
150
20
50
60
60
1.0
--
65
--
0.1
0.1
4.0
30
0.450
--
--
--
--
--
--
--
--
1.5
2.77
--
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
I
D
= 1mA, V
GS
= 0V
V
GS
=
20V, V
DS
= 0V
V
DS
= 60V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 15A, V
GS
= 10V
I
D
= 15A, V
GS
= 10V
I
D
= 15A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
DD
= 30V, I
D
= 15A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 15A, V
GS
= 0V
Channel to case
I
S
= 30A, dis/dt = 100A/
s
PERFORMANCE CURVES
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30VS-06
HIGH-SPEED SWITCHING USE
0
20
40
60
80
100
0
4
8
12
16
20
T
C
= 25C
V
DS
= 10V
Pulse Test
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(m
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
10
1
2
10
0
3 5 7
2
10
1
10
2
3 5 7
5 7
3
2
Tch = 25C
f = 1MH
Z
V
GS
= 0V
Ciss
Coss
Crss
0
10
20
30
40
50
2
10
1
3 5 7
2
10
2
3 5 7
2 3 5 7
10
0
7
V
GS
= 10V
20V
T
C
= 25C
Pulse Test
10
0
10
1
2
3 4 5 7
10
2
2
3 4 5 7
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
T
C
= 25C
V
DS
= 10V
Pulse Test
75C
125C
10
0
10
1
2
3 4 5 7
10
2
2
3 4 5 7
10
1
10
2
2
3
4
5
7
10
3
2
3
4
5
7
Tch = 25C
V
DD
= 30V
V
GS
= 10V
R
GEN
= R
GS
= 50
t
d(off)
t
d(on)
t
f
t
r
0
1.0
2.0
3.0
4.0
5.0
0
4
8
12
16
20
T
C
= 25C
Pulse Test
30A
10A
I
D
= 60A
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30VS-06
HIGH-SPEED SWITCHING USE
0
4
8
12
16
20
0
10
20
30
40
50
V
DS
= 10V
Tch = 25C
I
D
= 30A
20V
40V
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
2.0
V
GS
= 0V
Pulse Test
T
C
= 125C
75C
25C
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(tC)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(
c
hc
)
(C/
W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(tC)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25C)
0.4
0.6
0.8
1.0
1.2
1.4
50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
0
1.0
2.0
3.0
4.0
5.0
50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
10
1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
50
0
50
100
150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
10
2
10
1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
4
2 3 57
2 3 57
2 3 57
2 3 5710
0
2 3 5710
1
2 3 5710
2
10
3
10
2
10
1
P
DM
tw
D
=
T
tw
T
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
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