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Datasheet: BCR8CS (Powerex Power Semiconductors)

Medium Power Use Non-insulated Type, Planar Passivation Type

 

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Powerex Power Semiconductors
Feb.1999
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR8CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR8CS
APPLICATION
Solid state relay, hybrid IC
I
T (RMS)
........................................................................ 8A
V
DRM
..............................................................400V/600V
I
FGT
!
, I
RGT
!
, I
RGT
#
......................... 30mA (20mA)
V
5
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V
1
Non-repetitive peak off-state voltage
V
1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
500
12
600
720
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
--
Parameter
RMS on-state current
Surge on-state current
I
2
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360
conduction, T
c
=105
C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
2
s
W
W
V
A
C
C
g
Ratings
8
80
26
5
0.5
10
2
40 ~ +125
40 ~ +125
1.2
V
1. Gate open.
2 3
1
4
TYPE
NAME
VOLTAGE
CLASS
10.5 MAX
5
1
0.8
4.5
1.3
0.5
3.0
+0.3
0.5
0
+0.3
0
(1.5)
1.5 MAX
1.5 MAX
8.60.3
9.80.5
2.60.4
4.5
OUTLINE DRAWING
Dimensions
in mm
TO-220S
2 4
1
3
1
2
3
4
T
1
TERMINAL
T
2
TERMINAL
GATE
TERMINAL
T
2
TERMINAL
Measurement
point of case
temperature
Feb.1999
10
0
2 3
5 7 10
1
40
30
20
10
2 3
5 7 10
2
4
4
50
60
70
80
90
100
0
3.8
0.6
10
0
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
1
3.4
3.0
2.6
2.2
1.8
1.4
1.0
T
j
=
125C
T
j
=
25C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR8CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
V
2. Measurement using the gate trigger characteristics measurement circuit.
V
3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V
4. The contact thermal resistance R
th (c-f)
is 1.0
C/W.
V
5. High sensitivity (I
GT
20mA) is also available. (I
GT
item
1
)
Test conditions
Voltage
class
8
12
V
DRM
(V)
400
600
Min.
--
10
--
10
Commutating voltage and current waveforms
(inductive load)
(dv/dt)
c
Symbol
R
L
R
L
Unit
V/
s
1. Junction temperature
T
j
=125
C
2. Rate of decay of on-state commutat-
ing current
(di/dt)
c
=4A/ms
3. Peak off-state voltage
V
D
=400V
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
V
2
Gate trigger current
V
2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
T
j
=125
C, V
DRM
applied
T
c
=25
C, I
TM
=12A, Instantaneous measurement
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=125
C, V
D
=1/2V
DRM
Junction to case
V
4
Unit
mA
V
V
V
V
mA
mA
mA
V
C/ W
V/
s
Typ.
--
--
--
--
--
--
--
--
--
--
--
!
@
#
!
@
#
ELECTRICAL CHARACTERISTICS
Limits
Min.
--
--
--
--
--
--
--
--
0.2
--
V
3
Max.
2.0
1.5
1.5
1.5
1.5
30
V
5
30
V
5
30
V
5
--
2.0
--
SUPPLY
VOLTAGE
TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
PERFORMANCE CURVES
Feb.1999
10
1
2 3
10
1
5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
V
GT
= 1.5V
P
G(AV)
= 0.5W
V
GM
= 10V
P
GM
= 5W
I
GM
= 2A
I
FGT I
I
RGT I,
I
RGT III
V
GD
= 0.2V
2.2
2.4
0
2.0
1.8
1.6
1.4
1.2
0.6
0.8
0.4
0.2
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
10
2
5 7 10
3
1.0
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
TYPICAL EXAMPLE
0
40
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
80
120
I
RGT I
I
FGT I
I
RGT III
TYPICAL EXAMPLE
16
12
10
6
2
0
16
8
2
0
4
6
10
12
14
4
8
14
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
100
60
20
0
16
8
2
0
4
6
10
12
14
40
80
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (C/
W)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT (T
j
= tC)
GATE TRIGGER CURRENT (T
j
= 25C)
100 (%)
GATE TRIGGER VOLTAGE
( T
j
= t

C
)
GATE TRIGGER VOLTAGE
( T
j
= 25
C
)
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR8CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Feb.1999
10
1
10
3
7
5
3
2
10
2
7
5
3
2
4
4
60
20
20
60
100
140
40
0
40
80
120
TYPICAL EXAMPLE
160
100
80
40
20
0
140
40
40
60
20 0
20
60 80
140
100 120
60
120
TYPICAL EXAMPLE
10
3
10
5
7
5
3
2
10
4
7
5
3
2
7
5
3
2
10
2
60
20
20
60
100
140
40
0
40
80
120
TYPICAL EXAMPLE
160
120
100
60
20
0
3.2
1.6
0.4
0
0.8 1.2
2.0 2.4 2.8
40
80
140
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
100 (%)
HOLDING CURRENT
( T
j
= t

C
)
HOLDING CURRENT
( T
j
= 25
C
)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT
( T
j
= t

C
)
REPETITIVE PEAK OFF-STATE CURRENT
( T
j
= 25
C
)
100 (%)
BREAKOVER VOLTAGE
( T
j
= t

C
)
BREAKOVER VOLTAGE
( T
j
= 25
C
)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
10
1
40
160
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
0
40
80
120
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
T
2
+
, G
+
T
2
, G
T
2
+
, G
TYPICAL
EXAMPLE
TYPICAL
EXAMPLE
DISTRIBUTION
20
160
120
100
60
0
16
8
2
0
4
6
10
12
14
40
80
140
60 60 t2.3
120 120 t2.3
100 100 t2.3
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
ALL FINS ARE COPPER
AND ALUMINUM
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR8CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Feb.1999
COMMUTATION CHARACTERISTICS
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/s)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/s)
100 (%)
BREAKOVER VOLTAGE
( dv/dt = xV/s
)
BREAKOVER VOLTAGE
( dv/dt = 1V/s
)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (s)
100 (%)
GATE TRIGGER CURRENT
( tw
)
GATE TRIGGER CURRENT
( DC
)
10
1
10
3
7
5
3
2
10
0
2 3
5 7 10
1
10
2
7
5
3
2
2 3
5 7 10
2
4
4
4
4
I
FGT I
I
RGT I
I
RGT III
TYPICAL EXAMPLE
160
0
2 3
10
1
5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
80
60
40
20
100
120
140
TYPICAL EXAMPLE
T
j
= 125C
I QUADRANT
III QUADRANT
10
1
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
3
2
10
2
7
5
3
2
7
5
7
5
3
2
10
0
TYPICAL
EXAMPLE
T
j
= 125C
I
T
= 4A
= 500s
V
D
= 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
VOLTAGE WAVEFORM
CURRENT WAVEFORM
V
D
t
(dv/dt)
C
I
T
t
(di/dt)
C
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR8CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
6
6
6
6V
6V
6V
R
G
R
G
R
G
A
V
A
V
A
V
TEST PROCEDURE
1
TEST PROCEDURE
3
TEST PROCEDURE
2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
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