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Datasheet: BCR08AS (Powerex Power Semiconductors)

Low Power Use Non-insulated Type, Planar Passivation Type

 

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Powerex Power Semiconductors
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
I
T (RMS)
..................................................................... 0.8A
V
DRM
....................................................................... 600V
I
FGT
!
, I
RGT
!
, I
RGT
#
.............................................. 5mA
I
FGT
#
..................................................................... 10mA
BCR08AS
APPLICATION
Hybrid IC, solid state relay,
control of household equipment such as electric fan washing machine,
other general purpose control applications
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
--
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360
conduction, T
a
=40
C
3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
2
s
W
W
V
A
C
C
mg
Ratings
0.8
8
0.26
1
0.1
6
1
40 ~ +125
40 ~ +125
48
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
1
Non-repetitive peak off-state voltage
1
Voltage class
12 (marked "BF")
600
720
Unit
V
V
MAXIMUM RATINGS
1. Gate open.
2
1
3
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
4.40.1
1.50.1
1.60.2
0.40.07
0.8 MIN
2.50.1
3.90.3
0.4
+0.03
0.05
1
2
3
(Back side)
OUTLINE DRAWING
Dimensions
in mm
SOT-89
0.50.07
1.50.1 1.50.1
Mar. 2002
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
V
FGT
#
I
FGT
!
I
RGT
!
I
RGT
#
I
FGT
#
V
GD
R
th (j-a)
(dv/dt)
c
Test conditions
T
j
=125
C, V
DRM
applied
T
c
=25
C, I
TM
=1.2A, Instantaneous measurement
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=125
C, V
D
=1/2V
DRM
Junction to case
3
T
j
=125
C
Unit
mA
V
V
V
V
V
mA
mA
mA
mA
V
C/ W
V/
s
Typ.
--
--
--
--
--
--
--
--
--
--
--
--
--
!
@
#
$
!
@
#
$
2. Measurement using the gate trigger characteristics measurement circuit.
3. Mounted on 25mm
25mm
t0.7mm ceramic plate with solder.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
Commutating voltage and current waveforms
(inductive load)
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
2
Gate trigger current
2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
1. Junction temperature
T
j
=125
C
2. Rate of decay of on-state commutating current
(di/dt)
c
=0.4A/ms
3. Peak off-state voltage
V
D
=400V
Limits
Min.
--
--
--
--
--
--
--
--
--
--
0.1
--
0.5
Max.
1.0
2.0
2.0
2.0
2.0
2.0
5
5
5
10
--
65
--
10
1
10
1
7
5
3
2
0
1
2
10
0
7
5
3
2
3
4
5
4
4
T
j
= 125C
T
j
= 25C
10
0
2 3
5 7 10
1
4
2
2 3
5 7 10
2
4
4
6
8
10
0
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
SUPPLY
VOLTAGE
TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
PERFORMANCE CURVES
4
Mar. 2002
10
0
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
1
V
GM
= 10V
V
GT
P
GM
= 1W
P
G(AV)
= 0.1W
I
GM
= 1A
V
GD
= 0.2V
I
FGT III
I
FGT I
,
I
RGT I
, I
RGT III
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (

C)
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE (

C/
W)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CHARACTERISTICS
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
GATE TRIGGER CURRENT (T
j
= t

C)
GATE TRIGGER CURRENT (T
j
= 25

C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
GATE TRIGGER VOLTAGE
( T
j
= t

C
)
GATE TRIGGER VOLTAGE
( T
j
= 25

C
)
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
V
RGT I
V
RGT III
V
FGT I
V
FGT III
TYPICAL EXAMPLE
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
I
FGT I
I
RGT III
I
RGT I
I
FGT III
TYPICAL EXAMPLE
2.0
1.6
1.2
0.8
0.4
0
2.0
0
0.4
0.8
1.2
1.6
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
100
60
20
0
1.6
0
0.2
0.6
1.0
1.4
40
80
140
0.4
0.8
1.2
RESISTIVE,
INDUCTIVE
LOADS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
NATURAL CONVECTION
10
1
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
2 3
10
2
5 7 10
3
2 3 5 7 10
4
2 3 5 7 10
5
JUNCTION TO AMBIENT
JUNCTION TO CASE
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
10
3
7
5
3
2
10
2
7
5
3
2
10
1
100 (%)
HOLDING CURRENT
( T
j
= t
C
)
HOLDING CURRENT
( T
j
= 25
C
)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (
C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
C)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (
C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
C)
100 (%)
BREAKOVER VOLTAGE
( T
j
= t
C
)
BREAKOVER VOLTAGE
( T
j
= 25
C
)
COMMUTATION CHARACTERISTICS
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/
s)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/
s)
100 (%)
BREAKOVER VOLTAGE
( dv/dt = xV/
s
)
BREAKOVER VOLTAGE
( dv/dt = 1V/
s
)
160
100
80
40
20
0
140
40
40
60
20 0
20
60 80
140
100 120
60
120
TYPICAL EXAMPLE
140
40
40
60
20 0
20
60 80 100 120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
TYPICAL EXAMPLE
140
40
40
60
20 0
20
60 80 100 120
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
120
0
20
40
60
80
100
140
160
T
j
= 125
C
TYPICAL EXAMPLE
I QUADRANT
III QUADRANT
160
40
0
40
80
120
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
1
T
2
+
, G
TYPICAL EXAMPLE
TYPICAL
EXAMPLE
DISTRIBUTION
T
2
+
, G
+
T
2
, G
T
2
, G
+
TYPICAL
EXAMPLE
T
j
= 125
C
I
T
= 1A
= 500
s
V
D
= 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT
( T
j
= t
C
)
REPETITIVE PEAK OFF-STATE CURRENT
( T
j
= 25
C
)
TYPICAL EXAMPLE
10
1
2
3
5 7 10
0
10
0
7
5
3
2
2
3
5 7 10
1
10
1
7
5
3
2
10
1
Mar. 2002
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (s)
100 (%)
GATE TRIGGER CURRENT
( tw
)
GATE TRIGGER CURRENT
( DC
)
10
1
10
3
7
5
3
2
10
0
2 3
5 7 10
1
10
2
7
5
3
2
2 3
5 7 10
2
4
4
4
4
I
RGT I
I
RGT III
I
FGT I
I
FGT III
TYPICAL EXAMPLE
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
6
6
6
6
6V
6V
6V
6V
R
G
R
G
R
G
R
G
A
V
A
V
A
V
A
V
TEST PROCEDURE
1
TEST PROCEDURE
3
TEST PROCEDURE
2
TEST PROCEDURE
4
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
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