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Datasheet: M1102 (Philips Semiconductors)

Pnp Transistor/schottky-diode Module

 

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Philips Semiconductors
DATA SHEET
Product specification
File under Discrete Semiconductors, SC01
1996 May 09
DISCRETE SEMICONDUCTORS
PZTM1102
PNP transistor/Schottky-diode
module
handbook, halfpage
M3D087
1996 May 09
2
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PZTM1102
FEATURES
Low output capacitance
Fast switching time
Integrated Schottky protection
diode.
APPLICATIONS
High-speed switching for industrial
applications.
DESCRIPTION
Combination of a PNP transistor and a Schottky barrier diode in a plastic
SOT223 package. NPN complement: PZTM1101.
PINNING
PIN
DESCRIPTION
1
cathode Schottky
2
base
3
emitter
4
collector, anode Schottky
Fig.1 Simplified outline (SOT223) and symbol.
Marking code: TM1102.
handbook, halfpage
4
1
1
4
2
3
2
3
MAM237
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. An additional copper area of >20 mm
2
is required for pin 1, if power dissipation in the Schottky die is >0.5 W.
2. It is not allowed to dissipate the total power of 1.2 W in the Schottky die only.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PNP transistor
V
CBO
collector-base voltage
open emitter
-
-
40
V
V
CES
collector-emitter voltage
V
BE
= 0
-
-
40
V
V
EBO
emitter-base voltage
open collector
-
-
6
V
I
C
collector current (DC)
-
-
200
mA
Schottky barrier diode
V
R
continuous reverse voltage
-
40
V
I
F
forward current (DC)
-
1
A
I
F(AV)
average forward current
-
1
A
P
power dissipation
up to T
amb
= 25
C; note 1
-
0.5
W
T
j
junction temperature
reverse current applied
-
125
C
forward current applied
-
150
C
Combined device
P
tot
total power dissipation
up to T
amb
= 25
C; note 2
-
1.2
W
T
amb
operating ambient temperature
-
55
+150
C
T
stg
storage temperature
-
55
+150
C
T
j
junction temperature
-
150
C
1996 May 09
3
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PZTM1102
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
NPN transistor
V
(BR)CBO
collector-base breakdown
voltage
open emitter; I
C
=
-
10
A; I
E
= 0;
T
amb
=
-
55 to +150
C; note 1
-
40
-
V
V
(BR)CES
collector-emitter
breakdown voltage
open base; I
C
=
-
1 mA; V
BE
= 0;
T
amb
=
-
55 to +150
C; note 1
-
40
-
V
V
(BR)EBO
emitter-base breakdown
voltage
open collector; I
E
=
-
10
A; I
C
= 0;
T
amb
=
-
55 to +150
C; note 1
-
6
-
V
I
CES
collector-emitter cut-off
current
V
CE
=
-
20 V; V
BE
= 0
-
100
nA
V
CE
=
-
20 V; V
BE
= 0; T
amb
=
-
55 to +150
C
-
50
A
I
EBO
emitter-base cut-off current
V
EB
=
-
6 V; I
C
= 0
-
50
nA
V
EB
=
-
6 V; I
C
= 0; T
amb
=
-
55 to +150
C
-
10
A
V
CEsat
collector-emitter saturation
voltage
note 1
I
C
=
-
10 mA; I
B
=
-
1 mA
-
-
200
mV
I
C
=
-
50 mA; I
B
=
-
3.2 mA
-
-
300
mV
V
CEsat
collector-emitter saturation
voltage
T
amb
=
-
55 to +150
C; note 1
I
C
=
-
10 mA; I
B
=
-
1 mA
-
-
250
mV
I
C
=
-
50 mA; I
B
=
-
3.2 mA
-
-
350
mV
V
BEsat
base-emitter saturation
voltage
note 1
I
C
=
-
10 mA; I
B
=
-
1 mA
-
-
850
mV
I
C
=
-
50 mA; I
B
=
-
5 mA
-
-
950
mV
V
BEsat
base-emitter saturation
voltage
T
amb
=
-
55 to +150
C; note 1
I
C
=
-
10 mA; I
B
=
-
1 mA
-
-
1.0
V
I
C
=
-
50 mA; I
B
=
-
5 mA
-
-
1.1
V
C
ob
output capacitance
I
E
= i
e
= 0; V
CB
=
-
5 V; f = 1 MHz
-
4.5
pF
C
ib
input capacitance
I
C
= i
c
= 0; V
EB
=
-
0.5 V; f = 1 MHz
-
10
pF
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
20 V; f = 100 MHz
250
-
MHz
h
FE
DC current gain
V
CE
=
-
1 V; note 1
I
C
=
-
0.1 mA
40
-
I
C
=
-
1 mA
70
-
I
C
=
-
10 mA
100
300
I
C
=
-
100 mA
30
-
h
FE
DC current gain
V
CE
=
-
1 V; T
amb
=
-
55 to +150
C; note 1
I
C
=
-
10 mA
60
500
I
C
=
-
100 mA
15
-
S
WITCHING TIMES
(see Figs 2 and 3)
t
d
delay time
V
CC
= 5 V
3
7
ns
t
r
rise time
I
C
= 50 mA
13
23
ns
t
s
storage time
V
i
= 0 to 5 V
200
380
ns
t
f
fall time
50
80
ns
1996 May 09
4
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PZTM1102
Notes
1. Measured under pulsed conditions: t
p
300
s;
0.01.
2. Limiting value for T
j
= 125
C; T
j
= 150
C with reverse current applied is not allowed as this may cause thermal
runaway leading to thermal destruction of the diode. A peak junction temperature of T
j
= 150
C is only allowed with
forward voltage applied.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT223 standard mounting conditions.
Schottky barrier diode
V
F
forward voltage
I
F
= 100 mA; note 1
-
330
mV
I
F
= 100 mA; T
amb
=
-
55 to +150
C; note 1
-
400
mV
I
F
= 1 A; note 1
-
500
mV
I
F
= 1 A; T
amb
=
-
55 to +150
C; note 1
-
560
mV
I
R
reverse current
V
R
= 40 V; note 1
-
300
A
V
R
= 40 V; T
j
= 125
C;
T
amb
=
-
55 to +150
C; note 1
-
35
(2)
mA
I
R
reverse current
V
R
= 10 V; note 1
-
40
A
V
R
= 10 V; T
j
= 125
C;
T
amb
=
-
55 to +150
C; note 1
-
15
(2)
mA
C
j
junction capacitance
V
R
= 0 V; f = 1 MHz
-
250
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient (for the transistor)
note 1
100
K/W
R
th j-a
thermal resistance from junction to ambient (for the Schottky diode) note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1996 May 09
5
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PZTM1102
GRAPHICAL DATA
Fig.2 Switching times test circuit.
MBH222
handbook, halfpage
DUT
Vo (pin 4)
Vi
5 V
0 V
VCC = 5 V DC
90
(1%)
5.23
(1%)
7.5 k
(5%)
825
(1%)
Fig.3 Input and output waveforms.
t
r
< 5 ns (10% to 90%); t
p
= 1
s;
= 0.02; Z
i
= 50
.
t
on
= t
d
+ t
r
; t
off
= t
s
+ t
f
.
handbook, halfpage
MBH223
INPUT
OUTPUT
Vi
Vo
5 V
0 V
ton
tr
ts
toff
tp
td
tf
90%
90%
10%
10%
1996 May 09
6
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PZTM1102
PACKAGE OUTLINE
Dimensions in mm.
Fig.4 SOT223.
handbook, full pagewidth
6.7
6.3
0.95
0.85
2.3
0.80
0.60
4.6
3.1
2.9
3.7
3.3
7.3
6.7
A
B
0.2
A
1.80
max
16
16
o
max
10
o
max
0.10
0.01
0.32
0.24
4
1
2
3
MSA035 - 1
(4x)
0.1
B
M
M
S
seating plane
0.1 S
o
1996 May 09
7
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PZTM1102
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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