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Datasheet: J212 (Philips Semiconductors)

N-channel field-effect transistors

 

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Philips Semiconductors

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DATA SHEET
Product specification
File under Discrete Semiconductors, SC07
1997 Dec 01
DISCRETE SEMICONDUCTORS
J210; J211; J212
N-channel field-effect transistors
1997 Dec 01
2
Philips Semiconductors
Product specification
N-channel field-effect transistors
J210; J211; J212
FEATURES
·
High speed switching
·
Interchangeability of drain and source connections
·
High impedance.
APPLICATIONS
·
Analog switches
·
Choppers, multiplexers and commutators
·
Audio amplifiers.
DESCRIPTION
N-channel symmetrical junction field-effect transistor in a
TO-92 (SOT54) package.
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
PINNING - TO-92 (SOT54)
PIN
SYMBOL
DESCRIPTION
1
g
gate
2
s
source
3
d
drain
Fig.1 Simplified outline and symbol.
Marking codes:
J210: J210.
J211: J211.
J212: J212.
handbook, halfpage
1
3
2
MAM197
s
d
g
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
±
25
V
V
GSoff
gate-source cut-off voltage
I
D
= 1 nA; V
DS
= 15 V
J210
-
1
-
3
V
J211
-
2.5
-
4.5
V
J212
-
4
-
6
V
I
DSS
drain current
V
GS
= 0; V
DS
= 15 V
J210
2
15
mA
J211
7
20
mA
J212
15
40
mA
P
tot
total power dissipation
T
amb
50
°
C
-
400
mW
y
fs
common-source transfer admittance
V
GS
= 0; V
DS
= 15 V
J210
4
12
mS
J211
6
12
mS
J212
7
12
mS
1997 Dec 01
3
Philips Semiconductors
Product specification
N-channel field-effect transistors
J210; J211; J212
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm
2
.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm
2
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
±
25
V
V
GSO
gate-source voltage
open drain
-
-
25
V
V
DGO
drain-gate voltage
open source
-
-
25
V
I
G
forward gate current (DC)
-
10
mA
P
tot
total power dissipation
T
amb
50
°
C; note 1; see Fig.13
-
400
mW
T
stg
storage temperature
-
65
150
°
C
T
j
operating junction temperature
-
150
°
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient; note 1
250
K/W
1997 Dec 01
4
Philips Semiconductors
Product specification
N-channel field-effect transistors
J210; J211; J212
STATIC CHARACTERISTICS
T
j
= 25
°
C.
DYNAMIC CHARACTERISTICS
T
amb
= 25
°
C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
(BR)GSS
gate-source breakdown voltage
I
G
=
-
1
µ
A; V
DS
= 0
-
-
25
V
V
GSoff
gate-source cut-off voltage
I
D
= 1 nA; V
DS
= 15 V
J210
-
1
-
3
V
J211
-
2.5
-
4.5
V
J212
-
4
-
6
V
V
GSS
gate-source forward voltage
I
G
= 0; V
DS
= 0
-
1
V
I
DSS
drain current
V
GS
= 0; V
DS
= 15 V
J10
2
15
mA
J11
7
20
mA
J12
15
40
mA
I
GSS
reverse gate leakage current
V
GS
=
-
15 V; V
DS
= 0
-
-
100
pA
y
fs
common-source transfer admittance
V
GS
= 0; V
DS
= 15 V
J210
4
12
mS
J211
6
12
mS
J212
7
12
mS
y
os
common source output admittance
V
GS
= 0; V
DS
= 15 V
J210
-
150
µ
S
J211
-
200
µ
S
J212
-
200
µ
S
SYMBOL
PARAMETER
CONDITIONS
TYP.
UNIT
C
is
input capacitance
V
DS
= 15 V; V
GS
=
-
10 V; f = 1 MHz
2
pF
V
DS
= 15 V; V
GS
= 0; f = 1 MHz
4
pF
C
os
output capacitance
V
DS
= 15 V; V
GS
=
-
10 V; f = 1 MHz
0.8
pF
V
DS
= 15 V; V
GS
= 0; f = 1 MHz
2
pF
C
rs
feedback capacitance
V
DS
= 15 V; V
GS
=
-
10 V; f = 1 MHz
0.8
pF
V
DS
= 15 V; V
GS
= 0; f = 1 MHz
0.9
pF
g
is
common source input conductance
V
DS
= 15 V; V
GS
= 0; f = 100 MHz
70
µ
S
V
DS
= 15 V; V
GS
= 0; f = 450 MHz
1.1
mS
g
fs
common source transfer conductance
V
DS
= 15 V; V
GS
= 0; f = 100 MHz
7.5
mS
V
DS
= 15 V; V
GS
= 0; f = 450 MHz
7.5
mS
g
rs
common source feedback conductance
V
DS
= 15 V; V
GS
= 0; f = 100 MHz
-
8
µ
S
V
DS
= 15 V; V
GS
= 0; f = 450 MHz
-
90
µ
S
g
os
common source output conductance
V
DS
= 15 V; V
GS
= 0; f = 100 MHz
95
µ
S
V
DS
= 15 V; V
GS
= 0; f = 450 MHz
200
µ
S
V
n
equivalent input noise voltage
V
DS
= 15 V; V
GS
= 0; f = 1 kHz
5
nV/
Hz
1997 Dec 01
5
Philips Semiconductors
Product specification
N-channel field-effect transistors
J210; J211; J212
Fig.2
Drain current as a function of gate-source
cut-off voltage; typical values.
V
DS
= 15 V; T
j
= 25
°
C.
handbook, halfpage
0
-
2
-
4
-
6
40
30
10
0
20
MGM277
IDSS
(mA)
VGSoff (V)
Fig.3
Common-source transfer admittance as a
function of gate-source cut-off voltage;
typical values.
V
DS
= 15 V; T
j
= 25
°
C.
handbook, halfpage
0
-
2
-
4
-
6
12
0
4
8
MGM278
VGSoff (V)
yfs
(mS)
Fig.4
Common-source output conductance as a
function of gate-source cut-off voltage;
typical values.
V
DS
= 15 V; T
amb
= 25
°
C.
handbook, halfpage
0
-
2
-
4
-
6
80
60
20
0
40
MGM279
gos
(
µ
S)
VGSoff (V)
Fig.5 Output characteristics; typical values.
J210.
T
j
= 25
°
C.
handbook, halfpage
0
10
8
6
2
0
4
2
4
6
8
MGM280
ID
(mA)
VDS (V)
VGS = 0 V
-
200 mV
-
400 mV
-
600 mV
-
800 mV
-
1 V
-
1.4 V
-
1.2 V
1997 Dec 01
6
Philips Semiconductors
Product specification
N-channel field-effect transistors
J210; J211; J212
Fig.6 Input characteristics; typical values.
J210.
V
DS
= 10 V; T
j
= 25
°
C.
handbook, halfpage
-
2.5
0
-
0.5
8
6
2
0
4
-
1.5
-
1
-
2
MGM281
ID
(mA)
VGS (V)
Fig.7 Output characteristics; typical values.
J211.
T
j
= 25
°
C.
handbook, halfpage
0
10
20
0
4
MGM282
8
12
16
2
4
6
8
ID
(mA)
VDS (V)
VGS = 0 V
-
200 mV
-
400 mV
-
600 mV
-
800 mV
-
1 V
-
1.4 V
-
1.2 V
Fig.8 Input characteristics; typical values.
J211.
V
DS
= 10 V; T
j
= 25
°
C.
handbook, halfpage
-
6
-
4
-
2
0
20
0
16
12
8
4
MGM283
ID
(mA)
VGS (V)
Fig.9 Output characteristics; typical values.
J212.
T
j
= 25
°
C.
handbook, halfpage
0
10
24
0
8
16
2
4
6
8
MGM284
ID
(mA)
VDS (V)
VGS = 0 V
-
200 mV
-
400 mV
-
600 mV
-
800 mV
-
1 V
-
1.4 V
-
1.2 V
1997 Dec 01
7
Philips Semiconductors
Product specification
N-channel field-effect transistors
J210; J211; J212
Fig.10 Input characteristics; typical values.
J212.
V
DS
= 10 V; T
j
= 25
°
C.
handbook, halfpage
-
6
-
4
-
2
0
24
0
8
16
MGM285
ID
(mA)
VGS (V)
Fig.11 Feedback capacitance as a function of
gate-source voltage; typical values.
V
DS
= 15 V; f = 1 Mhz; T
amb
= 25
°
C.
handbook, halfpage
-
10
0
-
2
2
1.5
0.5
0
1
-
6
-
4
-
8
MGM286
Crs
(pF)
VGS (V)
Fig.12 Input capacitance as a function of
gate-source voltage; typical values.
V
DS
= 15 V; f = 1 Mhz; T
amb
= 25
°
C.
handbook, halfpage
-
10
0
5
0
1
MGM287
2
3
4
-
8
-
6
-
4
-
2
Cis
(pF)
VGS (V)
Fig.13 Power derating curve.
handbook, halfpage
0
50
100
150
500
0
400
300
200
100
MGM290
Ptot
(mW)
Tamb (
°
C)
1997 Dec 01
8
Philips Semiconductors
Product specification
N-channel field-effect transistors
J210; J211; J212
Fig.14 Drain current as a function of gate-source
voltage; typical values.
V
DS
= 15 V; T
j
= 25
°
C.
handbook, halfpage
0
-
2
-
1
-
3
-
4
MGM289
10
-
5
10
2
10
3
10
1
10
-
1
10
-
2
10
-
3
10
-
4
ID
(
µ
A)
VGS (V)
Fig.15 Gate current as a function of drain-gate
voltage; typical values.
T
j
= 25
°
C.
handbook, halfpage
20
16
8
12
4
0
MGM288
-
10
-
1
-
10
4
-
10
5
-
10
3
-
10
2
-
10
-
1
IG
(pA)
VDG (V)
ID = 10 mA
1 mA
0.1 mA
IGSS
1997 Dec 01
9
Philips Semiconductors
Product specification
N-channel field-effect transistors
J210; J211; J212
Fig.16 Common source input admittance as a
function of frequency; typical values.
V
DS
= 15 V; V
GS
= 0; T
amb
= 25
°
C.
handbook, halfpage
10
2
10
1
10
-
1
10
-
2
MGM291
10
10
2
10
3
yis
(mS)
f (MHz)
gis
bis
Fig.17 Common source transfer admittance as
a function of frequency; typical values.
handbook, halfpage
10
2
10
1
MGM292
10
10
2
10
3
yfs
(mS)
f (MHz)
gfs
-
bfs
V
DS
= 15 V; V
GS
= 0; T
amb
= 25
°
C.
Fig.18 Common source reverse admittance as
a function of frequency; typical values.
handbook, halfpage
10
1
10
-
1
10
-
2
10
-
3
MGM293
10
10
2
10
3
yrs
(mS)
f (MHz)
-
brs
-
grs
V
DS
= 15 V; V
GS
= 0; T
amb
= 25
°
C.
Fig.19 Common source output admittance as
a function of frequency; typical values.
handbook, halfpage
MGM294
10
10
2
10
3
10
1
10
-
1
10
-
2
yos
(mS)
f (MHz)
gos
bos
V
DS
= 15 V; V
GS
= 0; T
amb
= 25
°
C.
1997 Dec 01
10
Philips Semiconductors
Product specification
N-channel field-effect transistors
J210; J211; J212
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54
TO-92
SC-43
97-02-28
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
e1
e
1
2
3
1997 Dec 01
11
Philips Semiconductors
Product specification
N-channel field-effect transistors
J210; J211; J212
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Internet: http://www.semiconductors.philips.com
Philips Semiconductors ­ a worldwide company
© Philips Electronics N.V. 1997
SCA56
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Printed in The Netherlands
117067/00/01/pp12
Date of release: 1997 Dec 01
Document order number:
9397 750 02789
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