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Datasheet: J113AMO (Philips Semiconductors)

J111; J112; J113; N-channel Silicon Field-effect Transistors; Package: SOT54 (SPT, E-1)

 

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Philips Semiconductors

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DATA SHEET
Product specification
File under Discrete Semiconductors, SC07
July 1993
DISCRETE SEMICONDUCTORS
J111; J112; J113
N-channel silicon field-effect
transistors
July 1993
2
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
J111; J112; J113
DESCRIPTION
Symmetrical silicon n-channel
junction FETs in plastic TO-92
envelopes. They are intended for
applications such as analog switches,
choppers, commutators etc.
FEATURES
High speed switching
Interchangeability of drain and
source connections
Low R
DS on
at zero gate voltage
PINNING
Note: Drain and source are
interchangeable.
1 = gate
2 = source
3 = drain
Fig.1 Simplified outline and symbol, TO-92.
handbook, halfpage
1
3
2
MAM042
s
d
g
QUICK REFERENCE DATA
J111
J112
J113
Drain-source voltage
V
DS
max.
40
40
40
V
Drain current
V
DS
= 15 V; V
GS
= 0
I
DSS
min.
20
5
2
mA
Total power dissipation
up to T
amb
= 50
C
P
tot
max.
400
400
400
mW
Gate-source cut-off voltage
min.
max.
3
10
1
5
0.5
3
V
V
V
DS
= 5 V; I
D
= 1
A
-
V
GS off
Drain-source on-state resistance
V
DS
= 0.1 V; V
GS
= 0
R
DS on
max.
30
50
100
July 1993
3
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
J111; J112; J113
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
STATIC CHARACTERISTICS
T
j
= 25
C unless otherwise specified
Drain-source voltage
V
DS
max.
40 V
Gate-source voltage
-
V
GSO
max.
40 V
Gate-drain voltage
-
V
GDO
max.
40 V
Gate forward current (DC)
I
G
max.
50 mA
Total power dissipation
up to T
amb
= 50
C
P
tot
max.
400 mW
Storage temperature range
T
stg
-
65 to
+
150
C
Junction temperature
T
j
max.
150
C
From junction to ambient in free air
R
th j-a
=
250 K/W
J111
J112
J113
Gate reverse current
-
V
GS
= 15 V; V
DS
= 0
-
I
GSS
max.
1
1
1
nA
Drain cut-off current
V
DS
= 5 V;
-
V
GS
= 10 V
-
I
DSX
max.
1
1
1
nA
Drain saturation current
V
DS
= 15 V; V
GS
= 0
I
DSS
min.
20
5
2
mA
Gate-source breakdown voltage
-
I
G
= 1
A; V
DS
= 0
-
V
(BR)GSS
min.
40
40
40
V
Gate-source cut-off voltage
V
DS
= 5 V; I
D
= 1
A
-
V
GS off
min.
3
1
0.5
V
max.
10
5
3
V
Drain-source on-state resistance
V
DS
= 0.1 V; V
GS
= 0
R
DSon
max.
30
50
100
July 1993
4
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
J111; J112; J113
DYNAMIC CHARACTERISTICS
T
j
= 25
C unless otherwise specified
Input capacitance
V
DS
= 0;
-
V
GS
= 10 V; f = 1 MHz
C
is
typ.
6 pF
V
DS
=
-
V
GS
= 0; f = 1 MHz
C
is
typ.
22 pF
max.
28 pF
Feedback capacitance
V
DS
= 0;
-
V
GS
= 10 V; f = 1 MHz
C
rs
typ.
3 pF
Switching times
test conditions
V
DD
= 10 V; V
GS
= 0 to V
GSoff
-
V
GS off
= 12 V; R
L
=
750
for J111
-
V
GS off
= 7 V; R
L
= 1550
for J112
-
V
GS off
= 5 V; R
L
= 3150
for J113
Rise time
t
r
typ.
6 ns
Turn-on time
t
on
typ.
13 ns
Fall time
t
f
typ.
15 ns
Turn-off time
t
off
typ.
35 ns
Fig.2 Switching times test circuit.
ok, halfpage
MBK289
50
RL
DUT
10
F
1
F
VDD
10 nF
50
SAMPLING
SCOPE
50
Fig.3 Input and output waveforms.
MBK288
VGS off
toff
tf
VGS = 0 V
Vi
Vo
10%
90%
90%
10%
ton
tr
July 1993
5
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
J111; J112; J113
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54
TO-92
SC-43
97-02-28
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
e1
e
1
2
3
July 1993
6
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
J111; J112; J113
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Short-form specification
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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