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Datasheet: F0118J (OSRAM GmbH)

Infrared Emitting Diode Chip, 950 Nm, Enhanced Power

 

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OSRAM GmbH
F 0118G
GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power)
GaAs Infrared Emitting Diode (950 nm, Enhanced Power)
Vorläufige Daten / Preliminary Data
2003-04-10
1
Wesentliche Merkmale
· Typ. Gesamtleistung: 24 mW @ 100 mA im
TOPLED
®
Gehäuse
· Chipgröße 300 x 300
µ
m
2
· Emissionswellenlänge: 950 nm
· GaAs-LED mit sehr hohem Wirkungsgrad
· Gute Linearität (
I
e
=
f
[
I
F
]) bei hohen Strömen
· Gleichstrom- oder Impulsbetrieb möglich
· Hohe Zuverlässigkeit
· Hohe Impulsbelastbarkeit
Anwendungen
·
I
IR-Fernsteuerung von Fernseh-, Rundfunk-
und Videogeräten, Lichtdimmern
· Gerätefernsteuerungen für Gleich- und
Wechsellichtbetrieb
· Lichtschranken bis 500 kHz
· Sensorik
Typ
Type
Bestellnummer
Ordering Code
Beschreibung
Description
F 0118G
Q65110A0136
Infrarot emittierender Chip, Oberseite Anodenanschluß,
Infrared emitting die, top side anode connection
Features
· Typ. total radiant power: 24 mW @ 100 mA in
TOPLED
®
package.
· Chip size 300 x 300
µ
m
2
· Peak wavelength: 950 nm
· Very highly efficient GaAs LED
· Good linearity (
I
e
=
f
[
I
F
]) at high currents
· DC or pulsed operations are possible
· High reliability
· High pulse handling capability
Applications
· IR remote control for hifi and TV sets, video
tape recorder, dimmers
· Remote control for steady and varying
intensity
· Light-reflection switches (max. 500 kHz)
· Sensor technology
2003-04-10
2
F 0118G
Elektrische Werte (
T
A
= 25
°
C)
Electrical values
1)
(
T
A
= 25
°
C)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
2)
Einheit
Unit
min.
typ.
max.
Emissionswellenlänge
Peak wavelength
I
F
= 10 mA
peak
950
nm
Spektrale Bandbreite bei 50% von
I
max,
Spectral bandwidth at 50% of
I
max
I
F
= 10 mA
55
nm
Schaltzeiten,
I
e
von 10% auf 90% und von 90% auf
10%, bei
I
F
= 100 mA,
R
L
= 50
Switching times,
I
e
from 10% to 90% and from 90%
to 10%,
I
F
= 100 mA,
R
L
= 50
t
r
,
t
f
0.5/0.4
µ
s
Sperrspannung
Reverse voltage
I
R
= 1
µ
A
V
R
5
V
Durchla
spannung
Forward voltage
I
F
= 100 mA
V
F
1.4
1.6
V
Strahlungsleistung
Radiant Power
3)
I
F
= 100 mA
e
12
mW
Photostrom (Spezifikationsparameter Helligkeit)
Photocurrent (specified parameter brightness)
I
F
= 100 mA
I
e
0.65
a.u.
1)
Measurement limits describe actual settings and do not include measurement uncertainties. Each wafer and fragment
of a wafer is subject to final testing. The wafer or its pieces are individually attached on foils (rings). Sample chips are
picked from each foil and placed on a special carrier for measurement purposes. The sampling density is one chip per
2 cm². If a sample fails, the area around that sample is tested again by taking samples in fourfold density. If a sample
fails in that measurement, an area of 0,5 cm² around each failed sample is marked by pen. All el. values are referenced
to the vendor's measurement system (correlation to customer product(s) is required)
2)
Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a specified value
3)
Radiant power is measured on TO-18 header in integrating sphere.
F 0118G
2003-04-10
3
Mechanische Werte
Mechanical values
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
1)
Einheit
Unit
min.
typ.
max.
Chipkantenlänge (x-Richtung)
Length of chip edge (x-direction)
L
x
0.28
0.30
0.32
mm
Chipkantenlänge (y-Richtung)
Length of chip edge (y-direction)
L
y
0.28
0.30
0.32
mm
Durchmesser des Wafers
Diameter of the wafer
D
76.2
mm
Chiphöhe
Die height
H
165
185
205
µm
Bondpaddurchmesser
Diameter of bondpad
d
135
µm
Weitere Informationen
Additional information
2)
Vorderseitenmetallisierung
Metallization frontside
Aluminium
Aluminum
Rückseitenmetallisierung
Metallization backside
Goldlegierung
Gold alloy
Trennverfahren
Dicing
Sägen
Sawing
Verbindung Chip - Träger
Die bonding
Kleben
Epoxy bonding
1)
Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a specified value
2)
All chips are checked according to the following procedure and the OSRAM OS specification of the visual inspection
A63501-Q0013-N001-*-76G3:
The visual inspection shall be made in accordance to the "specification of the visual inspection" as referenced.The
visual inspection of chip backside is performed by eye for 100% of the area of each wafer. If decisions (good/bad) are
not possible additional a stereo microscope with incident light with 40x-80x magnification is used. Areas greater than
¼ cm² which have an amount of more than 3% failed dies will be marked manually with pen. The marked area from
backside will be transfered to frontside and will be also marked manually with pen. The visual inspection of chip
frontside is performed by a stereo microscope with incident light with 40x-80x magnification for 100% of the area of
each wafer. Areas greater than 1 cm² which have an amount of more than 50% failed dies and areas greater than 2
cm² which have an amount of more than 25% failed dies will be marked. The quality inspection (final visual inspection)
is performed by production. An additional visual inspection step as special release procedure by QM after the final
visual inspection is not installed.
F 0118G
2003-04-10
4
fj
Grenzwert
1)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Maximaler Betriebstemperaturbereich
Maximum Operating temperature range
T
op
-40...+85
°C
Maximaler Lagertemperaturbereich
Maximum storage temperature range
T
stg
-40...+85
°C
Maximaler Durchlaßstrom
Maximum forward current
I
F
100
mA
Maximaler Stoßstrom
Maximum surge current
t
p
= 10 µs, D = 0.005
I
S
3
A
Maximale Sperrschichttemperatur
Maximum junction temperature
T
j
125
°C
1)
Maximum ratings are strongly package dependent and may differ between different packages. The values given
represent the chip in a TO-18 package.
F 0118G
2003-04-10
5
Relative Spectral Emission
1)
I
Frel
= f (
)
T
A
= 25 °C
Forward Current
1)
I
F
= f (V
F
), Single pulse, t
p
= 20 µs, T
A
= 25 °C
1)
Based on typ.(see page 2, footnote 2 for explanation)
data measured in OSRAM Opto Semiconductor's
TOPLED® package.
Radiant Intensity
1)
I
e
/I
e
(100mA) = f (I
F
)
T
A
= 25 °C, single pulse: t
p
= 20 µs
Permissible Pulse Power
1)
Duty cycle D = parameter, T
A
= 25 °
C
OHR01938
rel
0
880
920
960
1000
nm
1060
20
40
60
80
%
100
10
OHR01554
F
V
-3
-2
10
-1
10
0
10
1
10
0
1
2
3
4
5
6
V
8
A
F
OHR01551
10
-3
F
-2
10
10
-1
10
0
10
1
10
2
e 100 mA
e
-2
10
-1
10
0
10
1
10
A
A
t
OHR00860
p
-5
10
10
2
F
10
3
10
4
5
DC
0.2
0.5
0.1
0.005
0.01
0.02
0.05
t
p
T
F
t
p
T
D =
5
mA
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
s
D =
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