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Datasheet: J110RLRA (ON Semiconductor)

N-channel - Depletion, Package: TO-92 (TO-226), Pins=3

 

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ON Semiconductor
©
Semiconductor Components Industries, LLC, 2001
September, 2001 ­ Rev. 3
1
Publication Order Number:
2N5638/D
J110
JFET - General Purpose
N­Channel ­ Depletion
N­Channel Junction Field Effect Transistors, depletion mode (Type
A) designed for general purpose audio amplifiers, analog switches and
choppers.
·
N­Channel for Higher Gain
·
Drain and Source Interchangeable
·
High AC Input Impedance
·
High DC Input Resistance
·
Low RDS(on) < 18
·
Fast Switching td(on) + tr = 8.0 ns (Typ)
·
Low Noise en = 6.0 nV/
Hz @ 10 Hz (Typ)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Gate­Source Voltage
VGS
­25
Vdc
Drain­Gate Voltage
VDG
­25
Vdc
Gate Current
IG
10
mAdc
Total Device Dissipation
@ TA = 25
°
C
Derate above 25
°
C
PD
310
2.82
mW
mW/
°
C
Operating Junction Temp Range
TJ
135
°
C
Storage Temperature Range
Tstg
­65 to +150
°
C
Device
Package
Shipping
ORDERING INFORMATION
J110
TO­92
TO­92
CASE 29
STYLE 5
5000 Units/Box
3
2
1
Preferred devices are recommended choices for future use
and best overall value.
J110RLRA
TO­92
2000/Tape & Reel
Y
= Year
WW
= Work Week
MARKING DIAGRAMS
J110
YWW
http://onsemi.com
1 DRAIN
2 SOURCE
3
GATE
J110
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
STATIC CHARACTERISTICS
Gate­Source Breakdown Voltage
(IG = ­1.0
µ
Adc)
V(BR)GSS
­25
­
Vdc
Gate Reverse Current
(VGS = ­15 Vdc, VDS = 0)
(VGS = ­15 Vdc, VDS = 0, TA = 100
°
C)
IGSS
­
­
­
3
.0
­200
nAdc
Gate­Source Cutoff Voltage
(VDS = 5.0 Vdc, ID = 1.0
µ
Adc)
VGS(off)
­0.5
­4.0
Vdc
Drain Source On­Resistance
(VDS = < 1.0 V, VGS = 0 V)
RDS(on)
10
­
mAdc
Zero­Gate­Voltage Drain Current (Note 1.)
(VDS = 15 Vdc)
IDSS
10
­
mAdc
DYNAMIC CHARACTERISTICS
Drain­Gate and Source­Gate On­Capacitance
(VDS = VGS = 0, f = 1.0 MHz)
Cdg(on)
+
Csg(on)
­
85
pF
Drain­Gate Off­Capacitance
(VGS = ­10 Vdc, f = 1.0 MHz)
Cdg(off)
­
15
pF
Source­Gate Off­Capacitance
(VGS = ­10 Vdc, f = 1.0 MHz)
Csg(off)
­
15
pF
1. Pulse Width = 300
µ
s, Duty Cycle = 3.0%.
0
­20
40
­4
VGS, GATE­SOURCE VOLTAGE (VOLTS)
C
iss
, INPUT CAP
ACIT
ANCE (pF)
0
VGS, GATE­SOURCE VOLTAGE (VOLTS)
Figure 1. Common Source Input Capacitance
versus Gate­Source Voltage
Figure 2. Common Source Reverse Feedback
Capacitance versus Gate­Source Voltage
C
rss
, FEEDBACK CAP
ACIT
ANCE (pF)
100
0
­20
­8
20
VDS = 0 V
60
VDS = 0 V
0
100
40
­12
­12
­16
­4
­8
­16
80
80
20
60
5 V
10 V
5 V
10 V
0
­8
8
­2
­1
VGS(off), GATE­SOURCE CUTOFF VOLTAGE (VOLTS)
R
DS(on)
, DRAIN­SOURCE
ON­RESIST
ANCE (OHMS)
0
VDS, DRAIN­SOURCE VOLTAGE (VOLTS)
Figure 3. On­Resistance versus Gate­Source
Cutoff Voltage
Figure 4. Output Characteristic
VGS(off) = ­2 V
I D
, DRAIN CURRENT (mA)
2
8
20
­3
4
12
VGS = 0 V
16
0
100
40
12
­4
­5
­6
­7
4
6
10
14
16
18
80
20
60
VGS(off): VDS = 5 V
VGS(off):
ID = 1.0
m
A
RDS(on): VDS
0.1 V
RDS(on):
VGS = 0 V
0
90
30
70
10
50
­0.25 V
­0.5 V
­0.75 V
­1.25 V
­1 V
J110
http://onsemi.com
3
VDS, DRAIN­SOURCE VOLTAGE (VOLTS)
Figure 5. Output Characteristic
VGS(off) = ­3 V
I D
, DRAIN CURRENT (mA)
2
8
20
VGS = 0 V
0
200
80
12
4
6
10
14
16
18
160
40
120
0
180
60
140
20
100
­0.5 V
­1 V
­1.5 V
­2.5 V
­2 V
VDS, DRAIN­SOURCE VOLTAGE (VOLTS)
Figure 6. Output Characteristic
VGS(off) = ­4 V
I D
, DRAIN CURRENT (mA)
2
8
20
VGS = 0 V
0
300
120
12
4
6
10
14
16
18
240
60
180
0
270
90
210
30
150
­1 V
­2 V
­0.5 V
­3 V
­2.5 V
VDS, DRAIN­SOURCE VOLTAGE (VOLTS)
Figure 7. Output Characteristic
VGS(off) = ­5 V
I D
, DRAIN CURRENT (mA)
2
8
20
VGS = 0 V
0
400
160
12
4
6
10
14
16
18
320
80
240
0
360
120
280
40
200
­0.5 V
­1 V
­1.5 V
­1.5 V
­2 V
­2.5 V
­3 V
­3.5 V
PACKAGE DIMENSIONS
J110
http://onsemi.com
4
CASE 29­11
ISSUE AL
TO­92 (TO­226)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X­X
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.021
0.407
0.533
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
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PUBLICATION ORDERING INFORMATION
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4­32­1 Nishi­Gotanda, Shinagawa­ku, Tokyo, Japan 141­0031
Phone: 81­3­5740­2700
Email: r14525@onsemi.com
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For additional information, please contact your local
Sales Representative.
J110/D
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