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Datasheet: M0002947 (National Semiconductor)

Mn54abt646-x Rev 0b0

 

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National Semiconductor
Original Creation Date: 08/25/95
Last Update Date: 10/05/98
Last Major Revision Date: 03/19/97
MN54ABT646-X REV 0B0
MICROCIRCUIT DATA SHEET
OCTAL TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS
General Description
The ABT646 consists of bus tranceiver circuits wit TRI-STATE, D-type flip-flops, and
control circuitry arranged for multiplexed transmission of data directly from the input
bus or from the internal registers. Data on the A or B bus will be clocked into the
registers as the appropriate clock pin goes to a high logic level. Control OE and
direction pins are provided to control the transceiver function. In the transceiver mode,
data present at the high impedance port may be stored in either the A or the B register or
in both. The select controls can mutiplex stored and real-time (transparent mode) data.
The direction control determines which bus will receive data when the enable control OE is
Active LOW. In the isolation mode (control OE HIGH), A data may be stored in the B
register and/or B data may be stored in the A register.
NS Part Numbers
54ABT646E-QML *
54ABT646J-QML **
54ABT646W-QML ***
Industry Part Number
54ABT646
Prime Die
NB646
Controlling Document
See Features Page
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
Subgrp Description Temp ( C)
o
1
Static tests at
+25
2
Static tests at
+125
3
Static tests at
-55
4
Dynamic tests at
+25
5
Dynamic tests at
+125
6
Dynamic tests at
-55
7
Functional tests at
+25
8A
Functional tests at
+125
8B
Functional tests at
-55
9
Switching tests at
+25
10
Switching tests at
+125
11
Switching tests at
-55
1
MICROCIRCUIT DATA SHEET
MN54ABT646-X REV 0B0
Features
- Independent registers for A and B buses.
- Multiplexed real-time and stored data.
- A and B output sink capability of 48 mA, source capability of 24 mA
- Guaranteed latchup protection
- High impedance glitch free bus loading during entire power up and power down cycle.
- Non-Destructive hot insertion capability.
- SMD : 5962-9457701Q3A*, QLA**, QKA***
2
MICROCIRCUIT DATA SHEET
MN54ABT646-X REV 0B0
(Absolute Maximum Ratings)
(Note 1)
Vcc Pin Potential to Ground Potential
-0.5V to +7.0V
Input Voltage
(Note 2)
-0.5V to +7.0V
Input Current
(Note 2)
-30mA to +5.0mA
Voltage Applied To Any Output
-0.5V to 5.5V
In the Disabled or Power-Off State
-0.5V to Vcc
In The High State
Current Applied To Output
96mA
In The Low State (Max)
Junction Temperature (Tj)
+175C
Ceramic
Thermal Resistance
See Mil-Std 1835
Junction-To-Case (Theta JC)
Storage Temperature
-65C to +150C
Lead Temperature
+300C
(Soldering, 10 seconds)
ESD Classification
Class 3
Maximum Power Dissipation
500 mW
Note 1:
Absolute maximum ratings are values beyond which the device may be damaged or have
its useful life impaired. Functional operation under these conditions is not
implied.
Note 2:
Either voltage limit or current limit is sufficient to protect inputs.
Recommended Operating Conditions
Supply Voltage (Vcc)
4.5V to 5.5V
Operating Temperature
-55C to +125C
Minimum Input Edge Rate (dV/dt)
50 mV/ns
Data Input
20 mV/ns
Enable Input
100 mV/ns
Clock Input
Maximum Output Current
-24 mA
High Level (Ioh)
48 mA
Low Level (Iol)
3
MN54ABT646-X REV 0B0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC:
4.5V to 5.5V Temp Range: -55C to 125C
SYMBOL
PARAMETER
CONDITIONS
NOTES
PIN-
NAME
MIN
MAX
UNIT
SUB-
GROUPS
ICCH
Supply Current
VCC=5.5V, VINH=5.5V, VINL=0.0V
1, 4 VCC
250.0
uA
1, 2,
3
ICCL
Supply Current
VCC=5.5V, VINH=5.5V, VINL=0.0V
1, 4 VCC
30.0
mA
1, 2,
3
ICCZ
Supply Current
VCC=5.5V, VINH=5.5V, VINL=0.0V
1, 4 VCC
250.0
uA
1, 2,
3
ICCT
Supply Current
per Input
VCC=5.5V, OE=0.0V Input under
test=3.4V Other inputs=5.5V or 0.0V
1, 4 VCC
2.5
mA
1, 2,
3
VCC=5.5V, OE=3.4V Other inputs=5.5V or
0.0V
1, 4 VCC
2.5
mA
1, 2,
3
IIH
High Level Input
Current
VCC=5.5V, VINH=5.5V
1, 4 IN
2.0
uA
1, 2,
3
IIL
Low Level Input
Current
VCC=5.5V, VINL=0.0V
1, 4 IN
-2.0
uA
1, 2,
3
IOZH
Maximum TRI-STATE
Leakage Current
HIGH
VCC=5.5V, VOUT=2.7V VINL=0.0V, VIH
(OE)=2.0V
1, 4 OUT
10.0
uA
1, 2,
3
IOZL
Maximum TRI-STATE
Leakage Current
LOW
VCC=5.5V, VOUT=0.5V VINH=5.5V, VIH
(OE)=2.0V
1, 4 OUT
-10.0
uA
1, 2,
3
ICEX
Output High
Leakage Current
VCC=5.5V, VOUT=5.5V VINH=5.5V
1, 4 OUT
50.0
uA
1, 2,
3
IOS
Output Short
Circuit Current
VCC=5.5V, VOUT=0.0V VINH=5.5V
1,
4,
10
OUT
-100
-275
mA
1, 2,
3
IOS1
Output Short
Circuit Current
VCC=5.5V, VOUT=2.5V VINH=5.5V
1,
4,
10
OUT
-50
-180
mA
1, 2,
3
IBVI
Input High
Current Breakdown
Test
VCC=5.5V, VINH=7.0V
1, 4 IN
7.0
uA
1, 2,
3
IZZ
Bus Drainage Test
VCC=0.0V, VOUT=4.5V, VINL=0.0V
1, 4 IN/OUT
-100
100
uA
1, 2,
3
VOL
Low Level Output
Voltage
VCC=4.5V, IOL=48.0mA, VINH=4.5V,
VINL=0.0V, VIH=2.0V, VIL=0.8V
1, 4 OUT
0.55
V
1, 2,
3
VOH
High Level Output
Voltage
VCC=4.5V, IOH=-24.0mA, VINH=4.5V,
VINL=0.0V, VIH=2.0V, VIL=0.8V
1, 4 OUT
2.0
V
1, 2,
3
VCC=4.5V, IOH=-3mA, VINH=4.5V,
VINL=0.0V, VIH=2.0V, VIL=0.8V
1, 4 OUT
2.5
V
1, 2,
3
VCC=5.0V, IOH=-3mA, VINH=5.0V,
VINL=0.0V, VIH=2.0V, VIL=0.8V
1, 4 OUT
3.0
V
1, 2,
3
4
MN54ABT646-X REV 0B0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC:
4.5V to 5.5V Temp Range: -55C to 125C
SYMBOL
PARAMETER
CONDITIONS
NOTES
PIN-
NAME
MIN
MAX
UNIT
SUB-
GROUPS
VID
Input Leakage
Test
VCC=0.0V, IID=1.9uA, VINL=0.0V
1, 4 IN
4.75
V
1, 2,
3
VCD
Input Clamp Diode
Voltage
VCC=4.5V, IKL=-18mA, VINH=4.5V,
VINL=0.0V
1, 4 IN
-1.2
V
1, 2,
3
VOLP
Low Level Ground
Bounce
VCC=5.0V, LOAD : 50pF / 500 OHMS
7, 8 OUT
1.2
V
4
VOLV
Low Level Ground
Bounce
VCC=5.0V, LOAD : 50pF / 500 OHMS
7, 8 OUT
-1.80
V
4
VOHP
High Level VCC
Bounce
VCC=5.0V, LOAD : 50pF / 500 OHMS
7, 8 OUT
1.5
V
4
VOHV
High Level VCC
Bounce
VCC=5.0V, LOAD : 50pF / 500 OHMS
7, 8 OUT
-1.10
V
4
CIN
Input Capacitance
VCC=0.0V
7
IN
14
pF
4
C I/O
Input/Output
Capacitance
VCC=5.0V
7
OUT
19.5
pF
4
AC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC:
CL=50pF RL=500 OHMS TRISE/TFALL = 3.0nS
tpLH1
Propagation Delay
VCC=5.0V @25C, VCC=4.5V & 5.5V
@-55C/125C
2, 5 Clock
to Bus
1.7
6.8
ns
9
2, 5 Clock
to Bus
2.2
8.8
ns
10, 11
tpHL1
Propagation Delay
VCC=5.0V @25C, VCC=4.5V & 5.5V
@-55C/125C
2, 5 Clock
to Bus
1.7
7.4
ns
9
2, 5 Clock
to Bus
1.7
8.8
ns
10, 11
tpLH2
Propagation Delay
VCC=5.0V @25C, VCC=4.5V & 5.5V
@-55C/125C
2, 5 Bus to
Bus
1.5
5.9
ns
9
2, 5 Bus to
Bus
1.5
7.9
ns
10, 11
tpHL2
Propagation Delay
VCC=5.0V @25C, VCC=4.5V & 5.5V
@-55C/125C
2, 5 Bus to
Bus
1.5
5.9
ns
9
2, 5 Bus to
Bus
1.5
7.9
ns
10, 11
tpLH3
Propagation Delay
VCC=5.0V @25C, VCC=4.5V & 5.5V
@-55C/125C
2, 5 SAB/BA
to
Bn/An
1.5
6.1
ns
9
2, 5 SAB/BA
to
Bn/An
1.2
8.1
ns
10, 11
5
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