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Datasheet: M15815EJ2V0DS00 (NEC)

 

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2001
MOS INTEGRATED CIRCUIT
MC-24212361-X
MCP (MULTI-CHIP PACKAGE) FLASH MEMORY AND MOBILE SPECIFIED RAM
64M-BIT FLASH MEMORY AND 16M-BIT MOBILE SPECIFIED RAM
PRELIMINARY DATA SHEET
Document No. M15815EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP (K)
Printed in Japan
The mark shows major revised points.
Description
The MC-24212361-X is a stacked type MCP (Multi-Chip Package) of 67,108,864 bits (4,194,304 words by 16 bits)
Flash Memory and 16,777,216 bits (1,048,576 words by 16 bits) Mobile Specified RAM.
The MC-24212361-X is packaged in 85-pin TAPE FBGA.
Features
General Features
Fast access time : t
ACC
= 85 ns (MAX.) (V
CC
f = 1.8 V), 90 ns (MAX.) (V
CC
f = 1.65 V) (Flash Memory)
t
AA
= 85, 95 ns (MAX.) (Mobile Specified RAM)
Supply voltage : -D85X, -D95X : 1.8 to 2.1 V (Chip) / 2.6 to 3.1 V (I/O) (Flash Memory), 2.6 to 3.1 V (Mobile Specified RAM)
-E85X, -E95X : 1.65 to 1.95 V (Chip) / 2.6 to 3.1 V (I/O) (Flash Memory), 2.6 to 3.1 V (Mobile Specified RAM)
Output Enable input for easy application
Wide operating temperature : T
A
=
-25 to +85 C
Flash Memory Features
Four bank organization enabling simultaneous execution of program / erase and read
High-speed read with page mode
Bank organization : 4 banks (8M bits + 24M bits + 24M bits + 8M bits)
Memory organization : 4,194,304 words 16 bits
Sector organization :
142 sectors (4K words
16 sectors, 32K words 126 sectors)
Boot sector allocated to the highest address (sector) and lowest address (sector)
3-state output
Automatic program
Program suspend / resume
Unlock bypass program
Automatic erase
Chip erase
Sector erase (sectors can be combined freely)
Erase suspend / resume
Program / Erase completion detection
Detection through data polling and toggle bits
Detection through RY (/BY) pin
Sector group protection
Any sector group can be protected
Any protected sector group can be temporary unprotected
Any sector group can be unprotected
Sectors can be used for boot application
Preliminary Data Sheet M15815EJ2V0DS
2
MC-24212361-X
Hardware reset and standby using /RESET pin
Automatic sleep mode
Boot block sector protect by /WP (ACC) pin
Extra One Time Protect Sector provided
Program / erase time
Program : 11.0
s / word (TYP.)
Sector erase :
Program / erase cycle : 100,000 cycles
0.15 s (TYP.) (4K words sector), 0.5 s (TYP.) (32K words sector)
Program / erase cycle : 300,000 cycles
0.5 s (TYP.) (4K words sector), 0.7 s (TYP.) (32K words sector)
Program / erase cycle : 300,000 cycles (MIN.)
Mobile Specified RAM Features
Memory organization : 1,048,576 words by 16 bits
Supply current :At operating : 35 mA (MAX.)
At Standby Mode 1 : 70
A (MAX.)
At Standby Mode 2 : 10
A (MAX.) (Memory cell data hold invalid)
Chip Enable inputs : /CEm
Byte data control : /LB, /UB
Standby Mode input : MODE
Standby Mode 1 : Normal standby (Memory cell data hold valid)
Standby Mode 2 : Memory cell data hold invalid
Preliminary Data Sheet M15815EJ2V0DS
3
MC-24212361-X
Ordering Information
Part Number
Flash Memory
Mobile Specified
Operating Supply Voltage
Package
Mounted
Access Time RAM Access Time
V
Flash Memory
ns (MAX.)
ns (MAX.)
Chip
I/O
MC-24212361F9-D85X-CD5
85
85
1.8 to 2.1
2.6 to 3.1
85-pin TAPE
PD29F064115-X
(Flash Memory)
(Flash
FBGA (11 x 8)
2.6 to 3.1
Memory)
MC-24212361F9-D95X-CD5
95
(Mobile Specified
RAM)
MC-24212361F9-E85X-CD5
90
85
1.65 to 1.95
(Flash Memory)
2.6 to 3.1
MC-24212361F9-E95X-CD5
95
(Mobile Specified
RAM)
COMMANDS, HARDWARE SEQUENCE FLAGS, HARD WARE DATA PROTECTION, READ MODE REGISTER
SETTINGS, TIMING CHARTS
and FLOW CHARTS for Flash Memory, refer to PAGE MODE FLASH MEMORY,
BURST MODE FLASH MEMORY Information (M15451E).
TIMING CHARTS OF MOBILE SPECIFIED RAM FOR MCP, refer to SRAM AND MOBILE SPECIFIED RAM
TAIMING CHARTS FOR MCP Information (M15819E).
Preliminary Data Sheet M15815EJ2V0DS
4
MC-24212361-X
Pin Configuration
/xxx indicates active low signal.
85-pin TAPE FBGA (11



8)
Top View
Vss
I/O9
I/O5
A7
/OE
I/O7
I/O4
I/O0
A6
A18
A11
A8
A5
I/O8
I/O12
A13
A17
NC
/CEf
I/O10
V
CC
f
/WE
V
CC
m
A16
I/O11
RY(/BY)
/RESET
A12
I/O6
I/O13
A9
A15
A19
I/O14
/CEm
I/O15
I/O1
A1
A2
A4
A10
V
CC
Qf
I/O2
A0
A3
MODE
A20
A14
/LB
NC
/WP(ACC)
/UB
I/O3
A21
IC
Vss
A
B
C
D
E
F
G
H
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
M
K
L
J
10
9
8
7
6
5
4
3
2
1
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
Top View
Bottom View
H
G
F
E
D
C
B
A
H G F E D C B A
M
K L
J
M
K
L
J
10
9
8
7
6
5
4
3
2
1
Common Pins
A0 to A19
: Address Inputs
I/O0 to I/O15 : Data Inputs / Outputs
/OE
: Output Enable Input
/WE
: Write Enable Input
V
SS
: Ground
NC
Note1
: No Connection
IC
Note2
: Internal Connection
Flash Memory Pins
A20, A21
: Address Inputs
/CEf
: Chip Enable Input
RY (/BY)
: Ready (Busy) Output
/RESET
: Hardware Reset Input
/WP(ACC) : Hardware Write Protect (Acceleration) Input
V
CC
f
: Supply Voltage
V
CC
Qf
: Input / Output Supply Voltage
Mobile Specified RAM Pins
/CEm
: Chip Enable Input
MODE
: Standby Mode Select Input
/LB, /UB : Byte Data Select Input
V
CC
m
: Supply Voltage
Notes 1. Some signals can be applied because this pin is not internally connected.
2. Leave this pin connected to V
SS
or unconnected (Recommended to connected to V
SS
).
Remark Refer to 8. Package Drawing for the index mark.
Preliminary Data Sheet M15815EJ2V0DS
5
MC-24212361-X
Block Diagram
64 M-bit Flash Memory
(4,194,304 words by 16 bits)
/WE
/OE
/CEm
/RESET
/CEf
I/O0 to I/O15
A0 to A21
16 M-bit Mobile Specified RAM
(1,048,576 words by 16 bits)
RY (/BY)
A0 to A21
V
CC
f
V
SS
V
CC
m
V
SS
MODE
/LB
/UB
/WP(ACC)
V
CC
Qf
A0 to A19
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