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Datasheet: M14947EJ4V0DS00 (NEC)

 

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2000
MOS INTEGRATED CIRCUIT



PD444001
4M-BIT CMOS FAST SRAM
4M-WORD BY 1-BIT
DATA SHEET
Document No. M14947EJ4V0DS00 (4th edition)
Date Published May 2002 NS CP(K)
Printed in Japan
The mark shows major revised points.
Description
The
PD444001 is a high speed, low power, 4,194,304 bits (4,194,304 words by 1 bit) CMOS static RAM.
Operating supply voltage is 5.0 V
0.5 V.
The
PD444001 is packaged in 32-pin PLASTIC SOJ.
Features
4,194,304 words by 1 bit organization
Fast access time : 10, 11, 12 ns (MAX.)
Output Enable input for easy application
Single +5.0 V power supply
Ordering Information
Part number
Package
Access time
Supply current mA (MAX.)
ns (MAX.)
At operating
At standby
PD444001LE-10
32-pin PLASTIC SOJ
10
170
10
PD444001LE-11
(10.16 mm (400))
11
160
PD444001LE-12
12
150
2



PD444001
Data Sheet M14947EJ4V0DS
Pin Configuration (Marking Side)
/xxx indicates active low signal.
32-pin PLASTIC SOJ (10.16 mm (400))
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A0
A1
A2
A3
A4
A5
/CS
V
CC
GND
D
IN
/WE
A6
A7
A8
A9
A10
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A21
A20
A19
A18
A17
A16
/OE
GND
V
CC
D
OUT
A15
A14
A13
A12
A11
NC
A0 - A21 : Address Inputs
D
IN
: Data Input
D
OUT
: Data Output
/CS
: Chip Select
/WE
: Write Enable
/OE
: Output Enable
V
CC
: Power supply
GND
: Ground
NC
: No connection
Remark Refer to Package Drawing for the 1-pin index mark.
3



PD444001
Data Sheet M14947EJ4V0DS
Block Diagram
A0
|
A21
Address buffer
Row decoder
Memory cell array
4,194,304 bits
GND
V
CC
/WE
/OE
/CS
Input data
controller
Sense amplifier /
Switching circuit
Column decoder
Address buffer
Output data
controller
D
IN
D
OUT
Truth Table
/CS
/OE
/WE
Mode
I/O
Supply current
H
Not selected
High impedance
I
SB
L
L
H
Read
D
OUT
I
CC
L
L
Write
D
IN
L
H
H
Output disable
High impedance
Remark
: Don't care
4



PD444001
Data Sheet M14947EJ4V0DS
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Supply voltage
V
CC
0.5
Note
to +7.0
V
Input / Output voltage
V
T
0.5
Note
to V
CC
+0.5
V
Operating ambient temperature
T
A
0 to 70
C
Storage temperature
T
stg
55 to +125
C
Note 2.0 V (MIN.) (pulse width : 2 ns)
Caution Exposing the device to stress above those listed in Absolute Maximum Rating could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
CC
4.5
5.0
5.5
V
High level input voltage
V
IH
2.2
V
CC
+ 0.5
V
Low level input voltage
V
IL
0.5
Note
+0.8
V
Operating ambient temperature
T
A
0
70
C
Note 2.0 V (MIN.) (pulse width : 2 ns)
5



PD444001
Data Sheet M14947EJ4V0DS
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input leakage current
I
LI
V
IN
= 0 V to V
CC
2
+2
A
Output leakage current
I
LO
V
OUT
= 0 V to V
CC
,
2
+2
A
/CS = V
IH
or /OE = V
IH
or /WE = V
IL
Operating supply current
I
CC
/CS = V
IL
,
Cycle time : 10 ns
170
mA
I
OUT
= 0 mA,
Cycle time : 11 ns
160
Minimum cycle time
Cycle time : 12 ns
150
Standby supply current
I
SB
/CS = V
IH
, V
IN
= V
IH
or V
IL
40
mA
I
SB1
/CS
V
CC
0.2 V,
10
V
IN
0.2 V or V
IN
V
CC
0.2 V
High level output voltage
V
OH
I
OH
= 4.0 mA
2.4
V
Low level output voltage
V
OL
I
OL
= +8.0 mA
0.4
V
Remark
V
IN
: Input voltage
V
OUT
: Output voltage
Capacitance (T
A
=
25



C, f = 1 MHz)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
IN
V
IN
= 0 V
6
pF
Output capacitance
C
OUT
V
OUT
= 0 V
8
pF
Remarks 1. V
IN
: Input voltage
V
OUT
: Output voltage
2. These parameters are periodically sampled and not 100% tested.
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