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Datasheet: M12225EJ7V0DS00 (NEC)

 

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MOS INTEGRATED CIRCUIT



PD434004AL
4M-BIT CMOS FAST SRAM
1M-WORD BY 4-BIT
DATA SHEET
Document No. M12225EJ7V0DS00 (7th edition)
Date Published December 2002 NS CP(K)
Printed in Japan
1996
Description
The
PD434004AL is a high speed, low power, 4,194,304 bits (1,048,576 words by 4 bits) CMOS static RAM.
Operating supply voltage is 3.3 V
0.3 V.
The
PD434004AL is packaged in a 32-pin plastic SOJ.
Features
1,048,576 words by 4 bits organization
Fast access time : 15, 17, 20 ns (MAX.)
Output Enable input for easy application
Single +3.3 V power supply
Ordering Information
Part number
Package
Access time
Supply current mA (MAX.)
ns (MAX.)
At operating
At standby
PD434004ALLE-A15
32-pin plastic SOJ
15
130
5
PD434004ALLE-A17
(10.16 mm (400))
17
120
PD434004ALLE-A20
20
110
2



PD434004AL
Data Sheet M12225EJ7V0DS
Pin Configuration
/xxx indicates active low signal.
32-pin plastic SOJ (10.16 mm (400))
Marking Side
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A0
A1
A2
A3
A4
/CS
I/O1
V
CC
GND
I/O2
/WE
A5
A6
A7
A8
A9
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A19
A18
A17
A16
A15
/OE
I/O4
GND
V
CC
I/O3
A14
A13
A12
A11
A10
NC
A0 to A19 : Address Inputs
I/O1 to I/O4 : Data Inputs / Outputs
/CS
: Chip Select
/WE
: Write Enable
/OE
: Output Enable
V
CC
: Power supply
GND
: Ground
NC
: No connection
Remark Refer to Package Drawing for the 1-pin index mark.
3



PD434004AL
Data Sheet M12225EJ7V0DS
Block Diagram
A0
|
A19
Address buffer
Row decoder
Memory cell array
4,194,304 bits
GND
V
CC
/WE
/OE
/CS
Input data
controller
Sense amplifier /
Switching circuit
Column decoder
Address buffer
I/O1
|
I/O4
Output data
controller
Truth Table
/CS
/OE
/WE
Mode
I/O
Supply current
H
Not selected
High-Z
I
SB
L
L
H
Read
D
OUT
I
CC
L
L
Write
D
IN
L
H
H
Output disable
High-Z
Remark
: Don't care
4



PD434004AL
Data Sheet M12225EJ7V0DS
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Supply voltage
V
CC
0.5
Note
to +4.6
V
Input / Output voltage
V
T
0.5
Note
to +4.6
V
Operating ambient temperature
T
A
0 to 70
C
Storage temperature
T
stg
55 to +125
C
Note 2.0 V (MIN.) (pulse width : 2 ns)
Caution Exposing the device to stress above those listed in Absolute Maximum Rating could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
CC
3.0
3.3
3.6
V
High level input voltage
V
IH
2.2
V
CC
+0.3
V
Low level input voltage
V
IL
0.3
Note
+0.8
V
Operating ambient temperature
T
A
0
70
C
Note 2.0 V (MIN.) (pulse width : 2 ns)
5



PD434004AL
Data Sheet M12225EJ7V0DS
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input leakage current
I
LI
V
IN
= 0 V to V
CC
2
+2
A
Output leakage current
I
LO
V
I/O
= 0 V to V
CC
,
2
+2
A
/CS = V
IH
or /OE = V
IH
or /WE = V
IL
Operating supply current
I
CC
/CS = V
IL
,
Cycle time : 15 ns
130
mA
I
I/O
= 0 mA,
Cycle time : 17 ns
120
Minimum cycle time
Cycle time : 20 ns
110
Standby supply current
I
SB
/CS = V
IH
, V
IN
= V
IH
or V
IL
50
mA
I
SB1
/CS
V
CC
0.2 V,
5
V
IN
0.2 V or V
IN
V
CC
0.2 V
High level output voltage
V
OH
I
OH
= 4.0 mA
2.4
V
Low level output voltage
V
OL
I
OL
= +8.0 mA
0.4
V
Remark V
IN
: Input voltage
V
I/O
: Input / Output voltage
Capacitance (T
A
=
25



C, f = 1 MHz)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
IN
V
IN
= 0 V
6
pF
Input / Output capacitance
C
I/O
V
I/O
= 0 V
10
pF
Remarks 1. V
IN
: Input voltage
V
I/O
: Input / Output voltage
2. These parameters are periodically sampled and not 100% tested.
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