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Datasheet: 2SJ625 (NEC)

Mos Field Effect Transistor

 

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MOS FIELD EFFECT TRANSISTOR



2SJ625
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
D15961EJ1V0DS00 (1st edition)
Date Published
June 2002 NS CP(K)
Printed in Japan
2002
DESCRIPTION
The 2SJ625 is a switching device which can be driven directly
by a 1.8 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
1.8 V drive available
Low on-state resistance
R
DS(on)1
= 113 m
MAX. (V
GS
= 4.5 V, I
D
= 1.5 A)
R
DS(on)2
= 171 m
MAX. (V
GS
= 2.5 V, I
D
= 1.5 A)
R
DS(on)3
= 314 m
MAX. (V
GS
= 1.8 V, I
D
= 1.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ625
SC-96 (Mini Mold Thin Type)
Marking: XM
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
m
8.0
V
Drain Current (DC) (T
A
= 25C)
I
D(DC)
m
3.0
A
Drain Current (pulse)
Note1
I
D(pulse)
m
12
A
Total Power Dissipation
P
T1
0.2
W
Total Power Dissipation
Note2
P
T2
1.25
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Notes 1. PW
10
s, Duty Cycle
1%
2. Mounted on FR-4 board, t
5
sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
0.06
0.4
+0.1
0.05
2.8 0.2
1.5
0.95
1
2
3
1.9
2.9 0.2
0.95
0.65
+0.1 0.15
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet D15961EJ1V0DS
2
2SJ625
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
m
8.0 V, V
DS
= 0 V
m
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1.0 mA
0.45
0.75
1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 1.5 A
2.0
4.9
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 4.5 V, I
D
= 1.5 A
90
113
m
R
DS(on)2
V
GS
= 2.5 V, I
D
= 1.5 A
128
171
m
R
DS(on)3
V
GS
= 1.8 V, I
D
= 1.0 A
188
314
m
Input Capacitance
C
iss
V
DS
= 10 V
348
pF
Output Capacitance
C
oss
V
GS
= 0 V
88
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
38
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10 V, I
D
= 1.5 A
39
ns
Rise Time
t
r
V
GS
= 4.0 V
190
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
220
ns
Fall Time
t
f
250
ns
Total Gate Charge
Q
G
V
DD
= 16 V
2.6
nC
Gate to Source Charge
Q
GS
V
GS
= 4.0 V
0.8
nC
Gate to Drain Charge
Q
GD
I
D
= 3.0 A
0.9
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 3.0 A, V
GS
= 0 V
0.89
V
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS(
-
)
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
PG.
50
D.U.T.
R
L
V
DD
I
G
=
-
2 mA
V
GS
Wave Form
V
DS
Wave Form
V
GS(
-
)
V
DS(
-
)
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D15961EJ1V0DS
3
2SJ625
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - P
e
rc
ent
age of
Rat
ed P
o
w
e
r - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
C
P
T
- Tot
a
l
P
o
w
e
r Di
s
s
i
pat
i
on - W
0
0.25
0.5
0.75
1
1.25
1.5
0
25
50
75
100
125
150
175
Mounted on FR-4 board,
t
5 sec
T
A
- Ambient Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drai
n Current
- A
-0.01
-0.1
-1
-10
-100
-0.1
-1
-10
-100
100 ms
10 ms
I
D(pulse)
I
D(DC)
PW = 1 ms
R
DS(on)
Limited
(V
GS
=
-
4.5 V)
5 s
Single Pulse
Mounted on FR-4 board of
5000 mm
2
x 1.1 mm
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(
c
h
-
A
)
- Trans
i
ent
Therm
a
l
Res
i
s
t
anc
e -
C/
W
1
10
100
1000
Single Pulse
W ithout board
Mounted on FR-4 board of
5000 mm
2
x 1.1 mm
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
Data Sheet D15961EJ1V0DS
4
2SJ625
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drai
n Current
- A
0
-2
-4
-6
-8
-10
-12
0
-0.4
-0.8
-1.2
-1.6
-2
Pulsed
-
2.5 V
V
GS
=
-
4.5 V
-
1.8 V
V
DS
- Drain to Source Voltage - V
I
D
- Drai
n Current
- A
-0.0001
-0.001
-0.01
-0.1
-1
-10
0
-1
-2
-3
V
DS
=
-
10 V
Pulsed
T
A
= 125C
75C
25C
-
25C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(
o
ff)
- Gat
e
Cut
-
of
f
V
o
l
t
age - V
-0.4
-0.6
-0.8
-1
-50
0
50
100
150
V
DS
=
-
10 V
I
D
=
-
1.0 mA
T
ch
- Channel Temperature -
C
| y
fs
| - Forw
ard Trans
f
e
r A
d
m
i
t
t
anc
e - S
0.1
1
10
100
-0.01
-0.1
-1
-10
V
DS
=
-
10 V
Pulsed
T
A
=
-
25C
25C
75C
125C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
50
100
150
200
250
300
-50
0
50
100
150
Pulsed
V
GS
=
-
1.8 V, I
D
=
-
1.0 A
V
GS
=
-
2.5 V, I
D
=
-
1.5 A
V
GS
=
-
4.5 V, I
D
=
-
1.5 A
T
ch
- Channel Temperature - C
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
50
100
150
200
250
300
0
-2
-4
-6
-8
Pulsed
I
D
=
-
1.5 A
V
GS
- Gate to Source Voltage - V
Data Sheet D15961EJ1V0DS
5
2SJ625
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
50
100
150
200
250
300
-0.01
-0.1
-1
-10
-100
V
GS
=
-
4.5 V
Pulsed
-
25C
25C
75C
T
A
= 125C
I
D
- Drain Current - A
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
50
100
150
200
250
300
-0.01
-0.1
-1
-10
V
GS
=
-
2.5 V
Pulsed
-
25C
25C
75C
T
A
= 125C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
SWITCHING CHARACTERISTICS
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
50
100
150
200
250
300
-0.01
-0.1
-1
-10
V
GS
=
-
1.8 V
Pulsed
-
25C
25C
75C
T
A
= 125C
I
D
- Drain Current - A
t
d(
on)
, t
r
, t
d(
of
f
)
, t
f
- S
w
i
t
c
h
i
ng Ti
m
e
- ns
10
100
1000
-0.1
-1
-10
V
DD
=
-
10 V
V
GS
=
-
4.0 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
I
D
- Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
C
is
s
, C
os
s
, C
rs
s
- Capac
i
t
anc
e - pF
10
100
1000
-0.1
-1
-10
-100
V
GS
= 0 V
f = 1.0 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
I
F
- Di
ode Forw
ard Current
- A
0.01
0.1
1
10
100
0.4
0.6
0.8
1
1.2
1.4
Pulsed
V
GS
= 0 V
V
F(S-D)
- Source to Drain Voltage - V
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