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Datasheet: 2SJ621 (NEC)

Mos Field Effect Transistor

 

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MOS FIELD EFFECT TRANSISTOR



2SJ621
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
D15634EJ1V0DS00 (1st edition)
Date Published
May 2002 NS CP(K)
Printed in Japan
2001
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SJ621 is a switching device which can be driven directly
by a 1.8 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
1.8 V drive available
Low on-state resistance
R
DS(on)1
= 44 m
MAX. (V
GS
= 4.5 V, I
D
= 2.0 A)
R
DS(on)2
= 56 m
MAX. (V
GS
= 3.0 V, I
D
= 2.0 A)
R
DS(on)3
= 62 m
MAX. (V
GS
= 2.5 V, I
D
= 2.0 A)
R
DS(on)4
= 105 m
MAX. (V
GS
= 1.8 V, I
D
= 1.5 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ621
SC-96 (Mini Mold Thin Type)
Marking: XG
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
12
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
m
8.0
V
Drain Current (DC) (T
A
= 25C)
I
D(DC)
m
3.5
A
Drain Current (pulse)
Note1
I
D(pulse)
m
12
A
Total Power Dissipation (T
A
= 25C)
P
T1
0.2
W
Total Power Dissipation (T
A
= 25C)
Note2
P
T2
1.25
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Notes 1. PW
10
s, Duty Cycle
1%
2. Mounted on FR-4 board, t
5
sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
0.06
0.4
+0.1
0.05
2.8 0.2
1.5
0.95
1
2
3
1.9
2.9 0.2
0.95
0.65
+0.1 0.15
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet D15634EJ1V0DS
2



2SJ621
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 12 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
m
8.0 V, V
DS
= 0 V
m
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1.0
mA
0.45
1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 3.5 A
4.0
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 4.5 V, I
D
= 2.0 A
35
44
m
R
DS(on)2
V
GS
= 3.0 V, I
D
= 2.0 A
42
56
m
R
DS(on)3
V
GS
= 2.5 V, I
D
= 2.0 A
46
62
m
R
DS(on)4
V
GS
= 1.8 V, I
D
= 1.5 A
63
105
m
Input Capacitance
C
iss
V
DS
= 10 V
630
pF
Output Capacitance
C
oss
V
GS
= 0 V
170
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
100
pF
Turn-on Delay Time
t
d(on)
V
DD
= 6.0 V, I
D
= 2.0 A
20
ns
Rise Time
t
r
V
GS
= 4.0 V
70
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
320
ns
Fall Time
t
f
200
ns
Total Gate Charge
Q
G
V
DD
= 10 V
6.2
nC
Gate to Source Charge
Q
GS
V
GS
= 4.0 V
1.0
nC
Gate to Drain Charge
Q
GD
I
D
= 3.5 A
2.0
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 3.5 A, V
GS
= 0 V
0.84
V
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS (
-
)
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
PG.
50
D.U.T.
R
L
V
DD
I
G
=
-
2 mA
V
GS
Wave Form
V
DS
Wave Form
V
GS(
-
)
V
DS(
-
)
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D15634EJ1V0DS
3



2SJ621
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - P
e
rc
ent
age of
Rat
ed P
o
w
e
r - %
0
20
40
60
80
100
120
0
20
40
60
80
100
120
140
160
P
T
- T
o
t
a
l
P
o
w
e
r Di
s
s
i
p
at
i
on - W
0
0.25
0.5
0.75
1
1.25
1.5
0
20
40
60
80
10 0
12 0
14 0
16 0
T
A
- Ambient Temperature -
C
T
A
- Ambient Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drai
n Current
- A
5 s
1 00 m s
P W = 1 m s
1 0 m s
I
D (p u ls e)
I
D (D C )
R
D S (o n)
L im ite d
(V
G S
=
-
4 .5 V )
S ing le P u ls e
M o un te d o n F R -4 b o ard o f
5 0 x 50 x 1.6 m m
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(
c
h
-
A
)
- Trans
i
ent
Therm
a
l
Res
i
s
t
anc
e -
C/
W
0.1
1
10
100
1000
Without board
Single Pulse
Mounted on FR-4 board of
50 50 1.6 mm
PW - Pulse Width - s
-
0.1
-
1
-
10
-
100
-
100
-
10
-
1
-
0.1
-
0.01
1 m
10 m
100 m
1
10
100
1000
Data Sheet D15634EJ1V0DS
4



2SJ621
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drai
n Current
- A
P u ls e d
-
4 . 5 V
-
1 . 8 V
-
2 . 5 V
-
3 . 0 V
I
D
- Drai
n Current
- A
V
D S
=
-
1 0 V
P u ls e d
T
A
=
-
2 5
C
2 5C
7 5C
1 25 C
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(
o
ff)
- Gat
e
Cut
-
of
f
V
o
l
t
age - V
-50
0
50
100
150
V
S D
=
-
10 V
I
D
=
-
1 m A
| y
fs
| - Forw
ard Trans
f
e
r A
d
m
i
t
t
anc
e - S
0 .1
1
1 0
1 0 0
T
A
=
-
2 5
C
2 5
C
7 5
C
1 2 5
C
V
D S
=
-
1 0 V
P u ls e d
T
ch
- Channel Temperature -
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
20
40
60
80
100
-50
0
50
100
150
Pulsed
V
G S
=
-
1.8 V
-
2.5 V
-
4.5 V
-
3.0 V
0
2 0
4 0
6 0
8 0
1 0 0
P u ls e d
I
D
=
-
2 .0 A
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
T
ch
- Channel Temperature -
C
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
V
GS
- Gate to Source Voltage - V
0
-
0.2
-
0.4
-
0.6
-
0.8
0
-
0.4
-
0.8
-
1.2
-
1.6
-
2
-
0.01
-
0.1
-
1
-
10
0
-
2
-
4
-
6
-
8
-
12
-
10
-
8
-
6
-
4
-
2
0
-
100
-
10
-
1
-
0.1
-
0.01
-
0.001
-
0.0001
-
1.2
-
0.7
-
0.2
Data Sheet D15634EJ1V0DS
5



2SJ621
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
4 0
6 0
8 0
1 0 0
1 2 0
V
G S
=
-
1 .8 V
P u ls e d
T
A
= 1 2 5
C
7 5
C
2 5
C
-
2 5
C
20
30
40
50
60
70
80
V
G S
=
-
2.5 V
P u ls ed
T
A
= 1 25
C
75
C
25
C
-
25
C
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
I
D
- Drain Current - A
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
30
40
50
60
70
80
V
G S
=
-
3.0 V
P u lse d
T
A
= 1 25
C
75
C
25
C
-
25
C
2 0
3 0
4 0
5 0
6 0
V
G S
=
-
4 .5 V
P ulse d
T
A
= 12 5
C
7 5
C
2 5
C
-
2 5
C
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
I
D
- Drain Current - A
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
I
D
- Drain Current - A
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
1 0
1 0 0
1 0 0 0
1 0 0 0 0
V
G S
= 0 V
f = 1 M H z
C
is s
C
o s s
C
rs s
1 0
1 0 0
1 0 0 0
V
D D
=
-
6 .0 V
V
G S
=
-
4 .0 V
R
G
= 1 0
t
d (o ff)
t
d (o n )
t
r
t
f
C
is
s
, C
os
s
, C
rs
s
- Capac
i
t
anc
e - pF
V
DS
- Drain to Source Voltage - V
t
d(
on)
, t
r
, t
d(
of
f
)
, t
f
- S
w
i
t
c
h
i
ng Ti
m
e
- ns
I
D
- Drain Current - A
-
0.01
-
0.1
-
1
-
10
-
100
-
0.01
-
0.1
-
1
-
10
-
100
-
0.01
-
0.1
-
1
-
10
-
100
-
0.01
-
0.1
-
1
-
10
-
100
-
0.1
-
1
-
10
-
100
-
0.1
-
1
-
10
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