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Datasheet: 2SJ601-Z (NEC)

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

 

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2000
MOS FIELD EFFECT TRANSISTOR
2SJ601
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
PRELIMINARY DATA SHEET
Document No.
D14646EJ1V0DS00 (1st edition)
Date Published
November 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SJ601 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
Low on-state resistance:
R
DS(on)1
= 31 m
MAX. (V
GS
= 10
V, I
D
= 18
A)
R
DS(on)2
= 46 m
MAX. (V
GS
= 4.0
V, I
D
= 18 A)
Low C
iss
: C
iss
= 3300 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60
V
Gate to Source Voltage (V
GS
= 0 V)
V
GSS
m
20
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
m
36
A
Drain Current (pulse)
Note1
I
D(pulse)
m
120
A
Total Power Dissipation (T
C
= 25C)
P
T
65
W
Total Power Dissipation
(T
A
= 25C)
P
T
1.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
35
A
Single Avalanche Energy
Note2
E
AS
123
mJ
Notes 1. PW
10
s, Duty cycle
1%
2. Starting T
ch
= 25C, R
G
= 25
, V
GS
= 20 V 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ601
TO-251
2SJ601-Z
TO-252
(TO-251)
(TO-252)
Preliminary Data Sheet D14646EJ1V0DS
2
2SJ601
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60
V, V
GS
= 0
V
10
A
Gate Leakage Current
I
GSS
V
GS
=
m
20
V, V
DS
= 0
V
m
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 18
A
15
30
S
R
DS(on)1
V
GS
= 10
V, I
D
= 18
A
25
31
m
Drain to Source On-state Resistance
R
DS(on)2
V
GS
= 4.0
V, I
D
= 18
A
32
46
m
Input Capacitance
C
iss
V
DS
= 10
V
3300
pF
Output Capacitance
C
oss
V
GS
= 0
V
580
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
230
pF
Turn-on Delay Time
t
d(on)
V
DD
= 30
V, I
D
= 18
A
11
ns
Rise Time
t
r
V
GS(on)
= 10
V
12
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
80
ns
Fall Time
t
f
53
ns
Total Gate Charge
Q
G
V
DD
= 48
V
63
nC
Gate to Source Charge
Q
GS
V
GS
= 10
V
10
nC
Gate to Drain Charge
Q
GD
I
D
= 36
A
16
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 36
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 36
A, V
GS
= 0
V
52
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A
/
s
108
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG
L
V
DD
V
GS
= 20 V
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
(
-
)
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
(
-
)
10%
90%
V
GS
(on)
10%
0
V
DS
(
-
)
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
V
DS
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
=
-
2 mA
-
Preliminary Data Sheet D14646EJ1V0DS
3
2SJ601
PACKAGE DRAWINGS (Unit : mm)
1) TO-251 (MP-3)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2
1
3
6.50.2
5.00.2
4
1.5-
0.1
+0.2
5.50.2
7.0 MAX.
13.7 MIN.
2.3
2.3
0.75
0.50.1
2.30.2
1.60.2
1.10.2
0.5-
0.1
+0.2
0.5-
0.1
+0.2
2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1
2
3
4
6.50.2
5.00.2
4.3 MAX.
0.8
2.3 2.3
0.9
MAX.
5.50.2
10.0 MAX.
2.0 MIN.
1.5-
0.1
+0.2
2.30.2
0.50.1
0.8
MAX.
0.8
1.0 MIN.
1.8 TYP.
0.7
1.10.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
2SJ601
M8E 00. 4
The information in this document is current as of November, 2000. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
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