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Datasheet: 2SJ557 (NEC)

P-channel Mos Field Effect Transistor For Switching

 

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1998, 1999
MOS FIELD EFFECT TRANSISTOR
2SJ557
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
D13292EJ1V0DS00 (1st edition)
Date Published
June 1999 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SJ557 is a switching device which can be driven directly
by a 4
V power source.
The 2SJ557 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
Can be driven by a 4
V power source
Low on-state resistance
R
DS(on)1
= 155 m
MAX. (V
GS
= 10
V, I
D
= 1.0
A)
R
DS(on)2
= 255 m
MAX. (V
GS
= 4.5
V, I
D
= 1.0 A)
R
DS(on)3
= 290 m
MAX. (V
GS
= 4.0
V, I
D
= 1.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ557
3-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage
V
DSS
30
V
Gate to Source Voltage
V
GSS
20 / +5
V
Drain Current (DC)
I
D(DC)
2.5
A
Drain Current (pulse)
Note1
I
D(pulse)
10
A
Total Power Dissipation
P
T1
0.2
W
Total Power Dissipation
Note2
P
T2
1.25
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Notes 1. PW
10
s, Duty Cycle
1 %
2. Mounted on FR4 Board, t
5
sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
0.06
2.8 0.2
1.5
0.95
1
2
3
1.9
2.9 0.2
0.4
+0.1
0.05
0.95
0.65
+0.1 0.15
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Marking: XB
Gate
Drain
Data Sheet D13292EJ1V0DS00
2
2SJ557
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
I
DSS
V
DS
= 30
V, V
GS
= 0
V
10
A
Gate Leakage Current
I
GSS
V
GS
= 16
V, V
DS
= 0
V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.0
1.7
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 1.5
A
1
2.5
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10
V, I
D
= 1.0
A
114
155
m
R
DS(on)2
V
GS
= 4.5
V, I
D
= 1.0
A
178
255
m
R
DS(on)3
V
GS
= 4.0
V, I
D
= 1.0
A
212
290
m
Input Capacitance
C
iss
V
DS
= 10
V
312
pF
Output Capacitance
C
oss
V
GS
= 0
V
117
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
56
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10
V
12
ns
Rise Time
t
r
I
D
= 1.0
A
7
ns
Turn-off Delay Time
t
d(off)
V
GS(on)
= 10
V
133
ns
Fall Time
t
f
R
G
= 10
85
ns
Total Gate Charge
Q
G
V
DD
= 10
V
2.8
nC
Gate to Source Charge
Q
GS
I
D
= 2.5
A
1.0
nC
Gate to Drain Charge
Q
GD
V
GS
= 4.0
V
1.2
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 2.5
A, V
GS
= 0
V
0.84
V
Reverse Recovery Time
t
rr
I
F
= 2.5
A, V
GS
= 0
V
28
ns
Reverse Recovery Charge
Q
rr
di/dt = 50
A
/
s
7.8
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
R
G
= 10
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D13292EJ1V0DS00
3
2SJ557
TYPICAL CHARACTERISTICS (T
A
= 25C)
30
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Der
ating F
actor - %
T
A
- Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
-
10
-
100
I
D
- Drain Current - A
-
1
V
DS
- Drain to Source Voltage - V
-
100
-
10
-
1
-
0.1
-
0.1
-
0.01
5 s
100
ms
10
ms
PW
= 1
ms
R
DS(on)
Limited
(@V
GS
=
-
10
V)
I
D
(pulse)
I
D
(
DC
)
Single Pulse
Mounted on FR-4 Board of
50mm x 50mm x 1.6mm
-
0.01
-
0.001
-
0.0001
-
0.00001
-
1
0
-
2
-
3
-
4
-
5
-
10
-
1
-
0.1
V
GS
- Gate to Sorce Voltage - V
-
25C
25C
75C
T
A
= 125C
V
DS
=
-
10 V
TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
=
-
10 V
I
D
=
-
1 mA
-
50
50
100
0
150
-
2.0
-
1.6
-
1.8
-
1.4
-
1.2
-
1
-
10
-
0.1
V
DS
=
-
10V
T
A
=
-
25 C
25 C
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
1
10
0.1
0.01
-
0.01
100
75 C
125 C
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
-
1
-
0.1
-
0.01
-
10
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - m
200
100
T
A
= 125C
75C
-
25C
25C
300
400
500
V
GS
=
-
4.0 V
Data Sheet D13292EJ1V0DS00
4
2SJ557
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
-
1
-
0.1
-
0.01
-
10
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - m
T
A
= 125C
100
300
200
500
400
V
GS
=
-
4.5 V
75C
25C
-
25C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
-
1
-
0.1
-
0.01
-
10
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - m
50
T
A
= 125C
100
200
150
250
V
GS
=
-
10 V
75C
25C
-
25C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -C
I
D
=
-
1.0 A
-
50
0
50
100
150
50
150
100
350
250
300
200
R
DS (on)
- Drain to Source On-state Resistance - m
-
10 V
V
GS
=
-
4.0 V
-
4.5 V
0
0
200
100
300
400
500
-
4
-
8
-
12
-
16
-
20
R
DS (on)
- Drain to Source On-state Resistance - m
V
GS
- Gate to Source Voltage - V
I
D
=
-
1.0 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
Ciss, Coss, Crss - Capacitance - pF
10
100
1000
-
1
-
10
-
100
f = 1 MHz
V
GS
= 0V
C
iss
C
rss
C
oss
-
0.1
-
1
-
10
I
D
- Drain Current - A
td
(on)
, tr, td
(off)
, tf - Swwitchig Time - ns
1000
100
10
1
tr
SWITCHING CHARACTERISTICS
V
DD
=
-
10V
V
GS
(
on
) =
-
10V
R
G
= 10
tf
td
(off)
td
(on)
Data Sheet D13292EJ1V0DS00
5
2SJ557
0.01
0.1
1
10
0.4
0.6
0.8
1.0
1.2
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
- Source to Drain Current - A
V
F(S-D)
- Source to Drain Voltage - V
Q
g
- Gate Charge - nC
0
1
3
5
4
2
DYNAMIC INPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
0
-
4
-
2
-
6
-
8
-
10
V
DD
=
-
10 V
-
6 V
I
D
=
-
2.5 A
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - S
r
th(ch-A)
- Transient Thermal Resistance - C/
W
10
1
100
1000
1
0.001
0.01
0.1
10
100
1000
Single Pulse
Without Board
Mounted on 250 mm x 35 m
Copper Pad
Connected to Drain Electrode
in 50 mm x 50 mm x 1.6 mm
FR-4 Board
2
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