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Datasheet: 2SJ462 (NEC)

P-channel Mos Field Effect Transistor For High Speed Switching

 

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1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ462
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SJ462 is a switching device which can be driven directly
by an IC operating at 3 V.
The 2SJ462 features a low on-state resistance and can be
driven by a low voltage power source, so it is suitable for applica-
tions such as power management.
FEATURES
Can be driven by a 2.5 V power source.
New-type compact package.
Has advantages of packages for small signals and for power
transistors, and compensates those disadvantages.
Low on-state resistance.
R
DS(ON)
: 0.29
MAX. @V
GS
= 2.5 V, I
D
= 0.5 A
R
DS(ON)
: 0.19
MAX. @V
GS
= 4.0 V, I
D
= 1.0 A
ABSOLUTE MAXIMUM RATINGS (T
A
= +25 C)
Drain to Source Voltage
V
DSS
12
V
Gate to Source Voltage
V
GSS
8.0
V
Drain Current (DC)
I
D(DC)
2.5
A
Drain Current (pulse)
I
D(pulse)
5.0*
A
Total Power Dissipation
P
T
2.0**
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
* PW
10 ms, Duty Cycle
1 %
** Mounted on ceramic board of 7.5 cm
2
0.7 mm
Document No. D11449EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
Package Drawings (unit : mm)
5.7 0.1
2.0 0.2
2
1
3
1.5 0.1
0.4 0.05
4.2
0.85 0.1
2.1
0.5 0.1
1.0
0.55
0.5 0.1
3.65 0.1
5.4 0.25
Equivalent Circuit
Source
Internal Diode
Gate Protect
Diode
Gate
Drain
Electrode
Connection
1. Source
2. Drain
3. Gate
Marking : UA3
2SJ462
2
ELECTRICAL SPECIFICATIONS (T
A
= +25 C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Conditions
Drain Cut-off Current
I
DSS
10
A
V
DS
= 12 V, V
GS
= 0
Gate Leakage Current
I
GSS
10
A
V
GS
=
8.0 V, V
DS
= 0
Gate Cut-off Voltage
V
GS(off)
0.7
1.0
1.3
V
V
DS
= 3.0 V, I
D
= 1.0 mA
Forward Transfer Admittance
|y
fs
|
1.5
S
V
DS
= 3.0 V, I
D
= 1.0 A
Drain to Source On-State
R
DS(on)1
195
290
m
V
GS
= 2.5 V, I
D
= 0.5 A
Resistance
Drain to Source On-State
R
DS(on)2
135
190
m
V
GS
= 4.0, I
D
= 1.0 A
Resistance
Input Capacitance
C
iss
940
pF
V
DS
= 3.0 V, V
GS
= 0
Output Capacitance
C
oss
835
pF
f = 1.0 MHz
Reverse Transfer Capacitance
C
rss
495
pF
Turn-On Delay Time
t
d(on)
45
ns
V
DD
= 3.0 V, I
D
= 1.0 A
Rise Time
t
r
225
ns
V
GS(on)
= 3.0 V, R
G
= 10
Turn-Off Delay Time
t
d(off)
140
ns
R
L
= 3.0
Fall Time
t
f
195
ns
Total Gate Charge
Q
G
12
nC
V
DS
= 8 V, I
D
= 2.5 A
Gate to Source Charge
Q
GS
2
nC
V
GS
= 3.0 V, I
G
= 2 mA
Gate to Drain Charge
Q
GD
7
nC
Diode Forward Voltage
V
F(SD)
0.86
V
I
F
= 2.5 A, V
GS
= 0
Reverse Recovery Time
t
rr
150
ns
I
F
= 2.5 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
160
nC
di/dt = 50 A/
s
2SJ462
3
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
0.001 0.01 0.1 1 10
R
DS(on)
- Drain to Source On-State Resistance -
0.2
0
0.1
0.3
0.4
0.5
0.6
V
GS
= 2.5 V
T
A
= 125 C
75 C
25 C
25 C
TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
0 0.5 1.0 1.5 2.0 2.5
I
D
- Drain Current - A
0.0001
10
0.001
0.1
1
0.01
T
A
= 75 C
T
A
= 25 C
T
A
= 25 C
T
A
= 125 C
V
DS
= 3 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
0.0001 0.001 0.01 0.1 1
IyfsI - Forward Transfer Admittance - S
0.01
0.1
1
10
25 C
75 C
125 C
T
A
= 25 C
V
DS
= 3 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Draint to Source Voltage - V
0 2 4 6 8 10
I
D
- Drain Current - A
0
1
2
3
4
5
V
GS
= 1 V
2 V
4 V
5 V
3 V
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
A
- Ambient Temperature - C
0 30 60 90 120 150
0
20
dT - Derating Factor - %
40
60
80
100
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
1 10 100
1
10
0.1
Single Pulse
ID - Drain Current - A
DC
PW = 100 ms
10 ms
1 ms
2SJ462
4
SWITCHING CHARACTERISTICS
I
D
- Draint Current - A
0.1 1 10
V
DD
= 3 V
V
GS(on)
= 3 V
Rin = 10
t
d(on)
,t
r
,t
d(off)
,t
f
- Switching Time - ns
10
100
1000
t
r
t
d(on)
t
f
t
d(off)
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
0.4 0.6 0.8 1.0 1.2 1.4
I
D
- Reverse Drain Current - A
0.001
0.01
0.1
1
10
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
0 2 4 6 8 10
R
DS(on)
- Drain to Source On-State Resistance -
0
0.1
0.2
0.3
I
D
= 2.5 A
1.0 A
0.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance -
0.001 0.01 0.1 1 10
0.2
0
0.1
0.3
0.4
0.5
0.6
T
A
= 125 C
75 C
25 C
25 C
V
GS
= 4 V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
0.1 1 10
Ciss,Coss,Crss - Capacitance - pF
1
10
0.1
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
0 8 16 24 32 40
V
DS
- Drain to Source Voltage - V
0
4
8
12
V
GS
- Gate to Source Voltage - V
0
2
4
8
V
DS
V
GS
V
DS
= 8 V
I
D
= 2.5 A
2SJ462
5
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
2SJ462
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
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property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
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a customer designated "quality assurance program" for a specific application. The recommended applications
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device before using it in a particular application.
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equipment and industrial robots
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Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
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they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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