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Datasheet: 2SJ449 (NEC)

Switching P-channel Power Mos Fet Industrial Use

 

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NEC

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MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SJ449 is P-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
FEATURES
Low On-Resistance
R
DS(on)
= 0.8
MAX. (@ V
GS
= 10 V, I
D
= 3.0 A)
Low C
iss
C
iss
= 1040 pF TYP.
High Avalanche Capability Ratings
Isolated TO-220 Package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
V
DSS
250
V
Gate to Source Voltage
V
GSS
m
30
V
Drain Current (DC)
I
D(DC)
m
6.0
A
Drain Current (pulse)*
I
D(pulse)
m
24
A
Total Power Dissipation (T
c
= 25 C)
P
T1
35
W
Total Power Dissipation (T
A
= 25 C) P
T2
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current**
I
AS
6.0
A
Single Avalanche Energy**
E
AS
180
mJ
*
PW
10
s, Duty Cycle
1 %
** Starting T
ch
= 25 C, R
G
= 25
, V
GS
= 20 V
0
2SJ449
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10030EJ1V0DS00
Date Published May 1995 P
Printed in Japan
1995
DATA SHEET
Drain
Source
Body
Diode
Gate
MP-45F(ISOLATED TO-220)
10.0 0.3
3.2 0.2
4.5 0.2
2.7 0.2
15.0 0.3
3 0.1
12.0 0.2
13.5
MIN.
4 0.2
1.3 0.2
1.5 0.2
2.54
2.54
0.7 0.1
0.65 0.1
2.5 0.1
1 2 3
1. Gate
2. Drain
3. Source
PACKAGE DIMENSIONS
(in millimeters)
2SJ449
2
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
R
DS(on)
0.55
0.8
V
GS
= 10 V, I
D
= 3.0 A
Gate to Source Cutoff Voltage
V
GS(off)
4.0
4.8
5.5
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
2.0
3.5
V
DS
= 10 V, I
D
= 3.0 A
Drain Leakage Current
I
DSS
100
V
DS
= 250 V, V
GS
= 0
Gate to Source Leakage Current
I
GSS
m
100
V
GS
=
m
30 V, V
DS
= 0
Input Capacitance
C
iss
1040
V
DS
= 10 V
Output Capacitance
C
oss
360
V
GS
= 0
Reverse Transfer Capacitance
C
rss
70
f = 1 MHz
Turn-On Delay Time
t
d(on)
24
I
D
= 3.0 A
Rise Time
t
r
16
V
GS(on)
= 10 V
Turn-Off Delay Time
t
d(off)
47
V
DD
= 125 V
Fall Time
t
f
14
R
G
= 10
, R
L
= 42
Total Gate Charge
Q
G
23.1
I
D
= 6.0 A
Gate to Source Charge
Q
GS
7.1
V
DD
= 200 V
Gate to Drain Charge
Q
GD
12.9
V
GS
= 10 V
Body Diode Forward Voltage
V
F(S-D)
0.92
I
F
= 6.0 A, V
GS
= 0
Reverse Recovery Time
t
rr
155
I
F
= 6.0 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
930
di/dt = 50 A/
s
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
R
G
= 25
50
PG
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
R
G
= 10
D.U.T.
PG.
0
t
R
L
V
DD
V
GS
t = 1 s
Duty Cycle
1 %
I
D
0
0
10 %
10 %
90 %
90 %
10 %
90 %
I
D
V
GS (on)
t
d (off)
t
d (on)
t
on
t
off
t
f
t
r
Test Circuit 3 Gate Charge
D.U.T.
R
L
V
DD
50
I
G
= 2 mA
PG.
V
DD
V
GS
R
G
D.U.T.
V
GS
Wave
Form
I
D
Wave
Form
UNIT
V
S
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
2SJ449
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
0.1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
20
0
20
40
60
80
100
120
140
160
20
40
60
80
100
40
60
80
100
120
140
160
35
30
25
20
15
10
5
0.1
1.0
1.0
10
100
10
100
1000
T
C
= 25 C
Single Pulse
0
10
15
20
15
1.0
10
100
Pulsed
20
5
0
1 ms
Power Dissipation Limited
R
DS(on)
Limited
(at V
GS
= 20 V)
Pulsed
I
D(DC)
10 ms
T
A
= 25 C
25 C
75 C
125 C
5
10
DC
100 ms
V
GS
= 20 V
10 V
PW = 100
s
4
8
12
16
V
DS
= 10 V
I
D(pulse)
2SJ449
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - C/
W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
|y
fs
| - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-State Resistance -
0
5
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cutoff Voltage - V
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance -
0.5
1.0
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
10
100
V
DS
= 10 V
Pulsed
1.0
1.0
10
100
10
100
0.5
1.5
10
15
Pulsed
1.0
10
100
Pulsed
Single Pulse
0
1.5
2.0
V
DS
= 10 V
I
D
= 1 mA
4.0
6.0
8.0
50
0
50
100
150
0
R
th(ch-a)
= 62.5 C/W
R
th(ch-c)
= 3.57 C/W
0.1
1.0
V
GS
= 10 V
20 V
0.1
I
D
= 6 A
3 A
1.2 A
T
A
= 25 C
25 C
75 C
125 C
2SJ449
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-State Resistance -
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1.0
0.1
0
50
0.5
1.0
1.5
0
50
100
150
I
D
= 3 A
0.1
0
1
10
100
0.5
Pulsed
10
1.0
100
1 000
10 000
10
100
1 000
V
GS
= 0
f = 1 MHz
10
100
1 000
1.0
10
100
V
GS
- Gate to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
rr
- Reverse Recovery time - ns
di/dt = 50 A/ s
V
GS
= 0
1.0
0.1
10
100
1000
1.0
10
100
1.0
1.5
2.0
V
DD
= 125 V
V
GS
= 10 V
R
G
= 10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
g
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
10
20
30
40
-100
-200
-300
-400
I
D
= 6 A
5
10
15
20
V
GS
= 10 V
C
rss
C
oss
C
iss
tr
t
d(on)
t
f
t
d(off)
0
V
DD
= 200 V
125 V
50 V
V
GS
= 0 V
10 V
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