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Datasheet: 2SJ356 (NEC)

P-channel Mos Fet For High-speed Switching

 

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NEC

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1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ356
P-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
Document No. D11218EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in mm)
1.6 0.2
4.5 0.1
0.42
0.06
0.8 MIN.
1.5
0.42
0.06
0.47
0.06
3.0
2.5 0.1
4.0 0.25
0.41
+0.03
0.05
1.5 0.1
S
D
G
EQUIVALENT CIRCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S:
D:
G:
Source
Drain
Gate
Marking: PR
The 2SJ356 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.
FEATURES
Can be directly driven by 5-V IC
Low ON resistance
R
DS(on)
= 0.95
MAX. @V
GS
= 4 V, I
D
= 1.0 A
R
DS(on)
= 0.50
MAX. @V
GS
= 10 V, I
D
= 1.0 A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
V
DSS
V
GS
= 0
60
V
Gate to Source Voltage
V
GSS
V
DS
= 0
20/+10
V
Drain Current (DC)
I
D(DC)
2.0
A
Drain Current (Pulse)
I
D(pulse)
PW
10 ms
4.0
A
Duty cycle
1 %
Total Power Dissipation
P
T
16 cm
2
0.7 mm, ceramic substrate used
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
The internal diode connected between the gate and source of this product is to protect the product from static
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect
a protection circuit.
Take adequate preventive measures against static electricity when handling this product.
The information in this document is subject to change without notice.
2SJ356
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
I
DSS
V
DS
= 60 V, V
GS
= 0
10
A
Gate Leakage Current
I
GSS
V
GS
= 16/+10 V, V
DS
= 0
10
A
Gate Cut-Off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.4
2.0
V
Forward Transfer Admittance
|y
fs
|
V
DS
= 10 V, I
D
= 1.0 A
1.0
S
Drain to Source On-State Resistance
R
DS(on)1
V
GS
= 4 V, I
D
= 1.0 A
0.65
0.95
Drain to Source On-State Resistance
R
DS(on)2
V
GS
= 10 V, I
D
= 1.0 A
0.41
0.50
Input Capacitance
C
iss
V
DS
= 10 V, V
GS
= 0,
270
pF
Output Capacitance
C
oss
f = 1.0 MHz
145
pF
Reverse Transfer Capacitance
C
rss
55
pF
Turn-On Delay Time
t
d(on)
V
DD
= 25 V, I
D
= 1.0 A
4.3
ns
Rise Time
t
r
V
GS(on)
= 10 V
21
ns
Turn-Off Delay Time
t
d(off)
R
G
= 10
, R
L
= 25
115
ns
Fall Time
t
f
75
ns
Gate Input Charge
Q
G
V
DS
= 48 V,
11.6
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V,
1.0
nC
Gate to Drain Charge
Q
GD
I
D
= 2.0 A, I
G
= 2 mA
3.8
nC
Internal Diode Reverse Recovery Time
t
rr
I
F
= 2.0 A,
82
ns
Internal Diode Reverse Recovery Charge
Q
rr
di/dt = 50 A/
s
94
nC
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Derating Factor -%
25
100
80
60
40
20
T
A
- Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drain Current - A
0.5
10
V
DS
- Drain to Source Voltage - V
0
50
75
100
125
150
5
2
1
0.5
0.2
0.1
0.05
Single pulse
1
100
2
5
10
20
50
PW = 100 ms
10 ms
1 ms
DC
2SJ356
3
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-State Resistance -
0.001
1
0.8
0.6
0.4
0.2
0
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-State Resistance -
0
1
0.8
0.6
0.4
0.2
V
GS
- Gate to Source Voltage - V
10
0.01
0.1
1
V
GS
= 10 V
Pulsed
T
A
= 150 C
T
A
= 75 C
T
A
= 25 C
T
A
= 0 C
T
A
= 25 C
20
2
4
6
8 10 12 14 16 18
I
D
= 2.0 A
I
D
= 1.0 A
Pulsed
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
I
D
- Drain Current - A
0
5
V
DS
- Drain to Source Voltage - V
TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
1
10
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
| - Forward Transfer Admittance - S
0.0001
10
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-State Resistance -
0.001
1.5
I
D
- Drain Current - A
Pulsed
1
2
3
4
5
4
3
2
1
10 V
4.5 V
4.0 V
3.5 V
3.0 V
2.5 V
V
GS
= 2.0 V
2
3
4
1
0.1
0.01
0.001
0.0001
0.00001
V
DS
= 10 V
Pulsed
T
A
= 150 C
T
A
= 25 C
T
A
= 25 C
T
A
= 75 C
1
0.1
0.01
0.001
0.001
0.01
0.1
1
T
A
= 25 C
T
A
= 0 C
T
A
= 25 C
T
A
= 75 C
T
A
= 150C
V
GS
= 4 V
Pulsed
1
0.5
0
0.01
0.1
1
10
T
A
= 150 C
T
A
= 75 C
T
A
= 25 C
T
A
= 0 C
T
A
= 25 C
V
DS
= 10 V
Pulsed
T
A
= 0 C
2SJ356
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(j-a)
- Transient Thermal Resistance - C/
W
1 m
1 000
100
10
1
PW - Pulse Width - s
10 m
100 m
1
10
100
Single pulse
Using ceramic substrate of
7.5 cm
2
0.7 mm
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
I
SD
- Diode Forward Current -A
0.2
10
1
0.1
0.01
0.001
0.0001
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
1
10 000
1 000
100
10
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0
1 000
100
10
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
t
rr
- Reverse Recovery Time - ns
0.05
1 000
100
10
I
F
- Diode Forward Current -A
C
iss
1.2
0.4
0.6
0.8
1.0
V
GS
= 0
Pulsed
10
100
V
GS
= 0
f = 1 MHz
C
oss
C
rss
1
10
V
DD
= 25 V
V
GS(on)
= 10 V
t
d(off)
t
f
t
d(on)
t
r
10
0.1
0.5
1
5
V
GS
= 0
di/dt = 50 A/ s
2SJ356
5
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
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