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Datasheet: 2SJ353 (NEC)

P-channel Mos Fet For High-speed Switching

 

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NEC

Document Outline

1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ353
P-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
PACKAGE DIMENSIONS (in mm)
7.0 MAX.
0.8 0.1
3.0 MAX.
0.6 0.1
0.6 0.1
0.6 0.1
1.7
1.7
G D S
1.5
4.0 MAX.
0.55 0.1
12.0 MIN.
9.0 MAX.
2.0
1.2
EQUIVALENT CIRCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S:
D:
G:
Source
Drain
Gate
The 2SJ353 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.
FEATURES
Radial taping supported
Can be directly driven by output of 5-V IC
Low ON resistance
R
DS(on)
= 0.68
MAX. @V
GS
= 4 V, I
D
= 0.8 A
R
DS(on)
= 0.37
MAX. @V
GS
= 10 V, I
D
= 1.0 A
Document No. D11216EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
V
DSS
V
GS
= 0
60
V
Gate to Source Voltage
V
GSS
V
DS
= 0
20/+10
V
Drain Current (DC)
I
D(DC)
1.5
A
Drain Current (Pulse)
I
D(pulse)
PW
10 ms,
3.0
A
Duty cycle
1 %
Total Power Dissipation
P
T
1.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
2SJ353
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
I
DSS
V
DS
= 60 V, V
GS
= 0
10
A
Gate Leakage Current
I
GSS
V
GS
= 16/+10 V, V
DS
= 0
10
A
Gate Cut-Off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.6
2.0
V
Forward Transfer Admittance
|y
fs
|
V
DS
= 10 V, I
D
= 1.0 A
1.0
S
Drain to Source On-State Resistance
R
DS(on)1
V
GS
= 4 V, I
D
= 0.8 A
0.58
0.68
Drain to Source On-State Resistance
R
DS(on)2
V
GS
= 10 V, I
D
= 1.0 A
0.33
0.37
Input Capacitance
C
iss
V
DS
= 10 V, V
GS
= 0,
320
pF
Output Capacitance
C
oss
f = 1.0 MHz
200
pF
Reverse Transfer Capacitance
C
rss
70
pF
Turn-On Delay Time
t
d(on)
V
DD
= 30 V, I
D
= 1.0 A
5
ns
Rise Time
t
r
V
GS(on)
= 10 V,
15
ns
Turn-Off Delay Time
t
d(off)
R
G
= 10
, R
L
= 30
40
ns
Fall Time
t
f
20
ns
2SJ353
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD
BIAS SAFE OPERATING AREA
dT - Derating Factor - %
0
100
80
60
40
20
T
A
- Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drain Current - A
1
10
V
DS
- Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
I
D
- Drain Current - A
0
5
4
3
2
1
V
DS
- Drain to Source Voltage - V
TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
0.5
10
1
0.1
0.01
0.001
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
| - Forward Transfer Admittance - S
0.001
10
1
0.1
0.01
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-State Resistance -
0.01
1.4
1.2
1
0.8
0.6
0.4
0.2
0
I
D
- Drain Current - A
30
60
90
120
150
5
2
1
0.5
0.2
0.1
2
5
10
20
50
100
Single pulse
PW = 100 ms
10 ms
1 ms
DC
1
2
3
4
5
10 V
4.5 V
4.0 V
3.5 V
3.0 V
2.5 V
V
GS
= 2.0 V
4
1
1.5
2
2.5
3
3.5
25 C
25 C
T
A
= 75 C
V
DS
= 10 V
1
0.01
0.1
V
DS
= 10 V
75 C
25 C
T
A
= 25 C
V
GS
= 4 V
25 C
T
A
= 75 C
25 C
0.1
1
10
2SJ353
4
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-State Resistance -
0.01
1
0.8
0.6
0.4
0.2
0
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-State Resistance -
0
1
0.8
0.6
0.4
0.2
V
GS
- Gate to Source Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
1
1 000
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0.1
100
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
I
SD
- Diode Forward Current - A
10
1
0.1
0.01
0.001
V
SD
- Source to Drain Voltage - V
0.1
1
10
2
5
100
10
0.2
0.5
1
2
5
1.2
V
GS
= 10 V
T
A
= 75 C
25 C
25 C
4
8
12
16
20
I
D
= 0.8 A
1.0 A
500
200
100
50
20
10
10
20
50
V
GS
= 0
f = 1 MHz
C
iss
C
oss
C
rss
50
20
10
5
2
1
V
DD
= 30 V
V
GS(on)
= 10 V
R
G
= 10
t
f
t
d(off)
t
f
t
d(on)
0.2
0.4
0.6
0.8
1
2SJ353
5
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
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