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Datasheet: 2SC5336 (NEC)

Npn Epitaxial Silicon Transistor High Frequency Low Distortion Amplifier

 

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PRELIMINARY DATA SHEET
1996
Document No. P10938EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
Silicon Transistor
2SC5336
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY LOW DISTORTION AMPLIFIER
FEATURES
PACKAGE DIMENSIONS
High gain
(in millimeters)
| S
21
|
2
= 12 dB TYP, @f = 1 GHz, V
CE
= 10 V, Ic = 20 mA
New power mini-mold package version of a 4-pin type
gain-improved on the 2SC3357
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
Note1
1.2
W
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25



C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
I
CB0
V
CB
= 10 V, I
E
= 0
1.0
A
Emitter Cutoff Current
I
EB0
V
EB
= 1 V, I
C
= 0
1.0
A
DC Current Gain
h
FE
V
CE
= 10 V, I
C
= 20 mA
Note2
50
120
250
Gain Bandwidth Product
f
T
V
CE
= 10 V, I
C
= 20 mA
6.5
GHz
Feed-back Capacitance
C
re
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Note3
0.5
0.8
pF
Insertion Power Gain
| S
21e
|
2
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
12.0
dB
Noise Figure
NF
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
1.1
dB
Noise Figure
NF
V
CE
= 10 V, I
C
= 40 mA, f = 1.0 GHz
1.8
3.0
dB
Notes 2. Pulse measurement : PW
350
S, Duty Cycle
2 %
3. Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
h
FE
Classification
Rank
RH
RF
RE
Marking
RH
RF
RE
h
FE
50 to 100
80 to 160
125 to
250
4.50.1
1.60.2
2.450.1
3.950.25
1.50.1
0.42
0.06
0.46
0.06
3.0
1.5
0.42
0.06
0.8MIN.
C
E
B
E
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
0.250.02
Note 1. 0.7 mm
16 cm
2
double sided ceramic substrate (Copper plating)
2
2SC5336
TYPICAL CHARACTERISTICS (T
A
= 25



C)
0
50
100
150
1.0
0.3
1
3
5
10
20
30
0.5
1.0
2.0
3.0
5.0
0
1
3
5
10
20 30
50
100
5
10
15
10
0.5
1
5
10
20
50
100
200
50
0.3
1
0.5
1
2
3
5
10
3
5
10
20
30 50
0
0.2
10
20
0.4
0.6 0.8 1.0 1.4
2.0
P
T
- Total Power Dissipation - W
T
A
- Ambient Temperature - C
FEED BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
V
CB
- Collector to Base Voltage - V
C
re
- Feed-back Capacitance - pF
INSERTION GAIN vs.
COLLECTOR CURRENT
I
C
- Collector Current - mA
S
21e
2
- Insertion Power Gain - dB
I
C
- Collector Current - mA
h
FE
- DC Current Gain
f
T
- Gain Bandwidth Product - GH
Z
I
C
- Collector Current - mA
S
21e
2
- Insertion Power Gain - dB
MAG - Maximum Available Power Gain - dB
f - Frequency - GH
Z
S
21e
2
MAG
V
CE
= 10 V
I
C
= 20 mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BAND WIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION GAIN .MAXIMUM GAIN vs.
FREQUENCY
V
CE
= 10 V
f = 1 GH
Z
V
CE
= 10 V
f = 1 GH
Z
f = 1.0 MH
Z
V
CE
= 10 V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
R
th(ja)
312.5 C/W
Ceramic Substrate
16 cm
2
0.7 mm
2.0
3
2SC5336
I
C
- Collector Current - mA
NF - Noise Figure - dB
V
CE
= 10 V
f = 1 GH
Z
0.5
0
1
2
3
4
5
6
7
1
5
10
50
I
C
- Collector Current - mA
INTERMODULATION DISTORTION vs.
COLLECTOR CURRENT
20
30
40
50
60
70
80
30
40
50
60
70
IM
2
- Intermoduration Distortion - dB
V
CE
= 10 V
V
O
= 100 dB V/50
R
g
= R
e
= 50
IM
2
f = 90 + 100 MH
Z
IM
3
f = 2
200 190 MH
Z
at
IM
3
IM
2
NOISE FIGURE vs. COLLECTOR CURRENT
4
2SC5336
S-PARAMETER
V
CE
= 10 V, I
C
= 20 mA
S
11
S
21
S
12
S
22
f (MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
.519
-
74.5
30.931
131.9
.017
60.6
.752
-
30.2
200
.413
-
112.9
18.965
111.5
.031
61.9
.570
-
39.7
300
.413
-
133.4
13.324
101.9
.038
65.1
.465
-
39.8
400
.345
-
145.7
10.164
95.9
.045
69.8
.428
-
40.1
500
.331
-
153.8
8.177
91.8
.055
71.8
.436
-
41.1
600
.320
-
159.6
6.834
89.1
.064
70.9
.438
-
43.5
700
.302
-
166.8
5.832
86.7
.074
73.9
.434
-
47.5
800
.296
-
169.2
5.107
84.3
.077
74.4
.429
-
47.8
900
.283
-
173.2
4.600
83.1
.088
71.2
.436
-
46.5
1000
.285
-
179.8
4.200
82.3
.097
74.5
.455
-
47.8
1100
.265
175.2
3.930
80.8
.100
76.3
.467
-
46.8
1200
.260
174.1
3.979
78.5
.109
75.9
.529
-
47.4
1300
.263
166.0
3.741
68.6
.114
76.8
.551
-
55.8
1400
.242
163.0
3.115
66.6
.119
78.3
.509
-
55.8
1500
.252
160.1
2.844
65.7
.133
82.0
.510
-
58.5
1600
.253
154.0
2.595
64.1
.140
81.0
.496
-
55.2
1700
.253
149.9
2.420
63.7
.158
80.9
.515
-
54.8
1800
.257
147.2
2.305
63.0
.165
82.2
.518
-
56.5
1900
.262
143.0
2.171
62.6
.172
80.5
.536
-
58.6
2000
.273
141.5
2.049
61.2
.177
78.3
.524
-
61.5
5
2SC5336
S-PARAMETER
V
CE
= 10 V, I
C
= 40 mA
S
11
S
21
S
12
S
22
f (MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
.378
-
97.1
32.908
123.3
.017
71.1
.665
-
34.7
200
.317
-
131.8
18.819
106.0
.027
71.2
.487
-
38.7
300
.308
-
150.1
12.955
97.5
.035
71.8
.398
-
38.5
400
.299
-
158.7
9.775
93.1
.042
78.1
.393
-
36.9
500
.297
-
165.5
7.899
89.8
.052
78.5
.399
-
37.6
600
.288
-
169.2
6.586
87.6
.061
79.1
.407
-
39.9
700
.274
-
173.7
5.607
85.2
.071
77.4
.400
-
44.6
800
.261
-
177.3
4.879
83.5
.081
76.4
.415
-
47.4
900
.255
178.9
4.435
82.2
.092
76.5
.399
-
46.2
1000
.260
173.0
4.024
81.4
.095
77.6
.440
-
44.3
1100
.243
169.4
3.801
80.6
.098
77.1
.441
-
45.2
1200
.239
169.3
3.827
78.2
.109
78.3
.494
-
46.2
1300
.245
160.3
3.587
68.4
.117
78.0
.517
-
55.4
1400
.216
157.8
2.980
66.0
.125
80.3
.486
-
54.5
1500
.235
155.3
2.726
66.1
.137
86.5
.500
-
59.0
1600
.243
148.8
2.537
64.0
.143
80.6
.474
-
53.7
1700
.233
146.0
2.348
64.2
.159
81.2
.496
-
56.8
1800
.242
144.6
2.200
63.5
.163
80.4
.491
-
53.6
1900
.249
141.9
2.073
63.3
.171
81.7
.534
-
58.0
2000
.260
140.4
1.986
61.7
.184
77.5
.535
-
61.3
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