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Datasheet: 2SC5182 (NEC)

Nps Epitaxial Silicon Transistor In Mini-mold Package For Low-noise Microwave Amplification

 

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NEC
1994
DATA SHEET
SILICON TRANSISTOR
2SC5182
NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
Low noise
NF = 1.3 dB
TYP.
@ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
NF = 1.3 dB
TYP.
@ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Mini-Mold package
EIAJ: SC-59
ORDERING INFORMATION
PART
QUANTITY
ARRANGEMENT
NUMBER
2SC5182-T1
Embossed tape, 8 mm wide,
Pin No. 3 (Collector)
facing the perforations
2SC5182-T2
3 000 units/reel
Embossed tape, 8 mm wide,
Pins No. 1 (Emitter) and No. 2 (Base)
facing the perforations
* Contact your NEC sales representative to order samples for evaluation
(available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
V
CBO
5
V
Collector to Emitter Voltage
V
CEO
3
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
30
mA
Total Power Dissipation
P
T
90
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12106EJ2V0DS00 (2nd edition)
(Previous No. TC-2479)
Date Published November 1996 N
Printed in Japan
PACKAGE DIMENSIONS
(Units: mm)
2.90.2
0.95
0.95
0.4
0.05
+0.1
1.5
0.4
0.05
+0.1
2.80.2
0.65
0.15
+0.1
3
2
1
0.16
0.06
+0.1
0 to 0.1
1.1 to 1.4
0.3
Marking
T86
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
2
2SC5182
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Collector Cutoff Current
I
CBO
100
nA
V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current
I
EBO
100
nA
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
70
140
V
CE
= 2 V, I
C
= 20 mA
*1
Insertion Power Gain (1)
|S
21e
|
2
7
8.5
dB
V
CE
= 2 V, I
C
= 20 mA,
f = 2 GHz
Insertion Power Gain (2)
|S
21e
|
2
6
7.5
dB
V
CE
= 1 V, I
C
= 10 mA,
f = 2 GHz
Noise Figure (1)
NF
1.3
2.0
dB
V
CE
= 2 V, I
C
= 3 mA,
f = 2 GHz
Noise Figure (2)
NF
1.3
2.0
dB
V
CE
= 1 V, I
C
= 3 mA,
f = 2 GHz
Gain Bandwidth Product (1)
f
T
9
12
GHz
V
CE
= 2 V, I
C
= 20 mA,
f = 2 GHz
Gain Bandwidth Product (2)
f
T
7
10
GHz
V
CE
= 1 V, I
C
= 10 mA,
f = 2 GHz
Feedback Capacitance
C
re
0.4
0.8
pF
V
CB
= 2 V, I
E
= 0 mA,
f = 1 MHz
*2
*1
Measured with pulses: Pulse width
350
s, duty cycle
2 %, pulsed.
*2
Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
h
FE
Class
Class
FB
Marking
T86
h
FE
70 to 140
3
2SC5182
CHARACTERISTICS CURVES (T
A
= 25 C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
T
A
- Ambient Temperature - C
P
T
- Total Power Dissipation - mW
50
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
- Base to Emitter Voltage - V
I
C
- Collector Current - mA
0.5
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - mA
1.0
0
100
200
100
150
0
10
20
30
40
50
1.0
0
5
10
15
20
25
2.0
3.0
Passive Air
Cooling
V
CE
= 2 V
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
B
= 20 A
90 mW
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
I
C
- Collector Current - mA
f
T
- Gain Bandwidth Product - GHz
1
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
I
C
- Collector Current - mA
1
2
4
4
6
8
10
12
14
16
2
5
10
20
50
100
6
8
10
12
14
2
5
10
20
50
100
V
CE
= 2 V
V
CE
= 1 V
f = 2 GHz
f = 2 GHz
V
CE
= 1 V
V
CE
= 2 V
|S
21e
|
2
- Insertion Power Grain - dB
I
C
- Collector Current - mA
h
FE
- DC Current Gain
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
10
20
50
1
2
5
10
20
50
100
V
CE
= 2 V
V
CE
= 1 V
4
2SC5182
NOISE FIGURE vs.
COLLECTOR CURRENT
I
C
- Collector Current - mA
NF - Noise Figure - dB
1
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
V
CB
- Collector to Base Voltage - V
Cre - Feedback Capacitance - pF
0
0
0.2
1
2
3
4
10
100
0.3
0.4
0.5
0.6
1.0
2.0
3.0
4.0
5.0
V
CE
= 2 V
V
CE
= 1 V
f = 2 GHz
f = 1 MHz
5
2SC5182
S-PARAMETERS
V
CE
= 1 V, I
C
= 1 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
0.946
0.909
0.853
0.786
0.720
0.637
0.568
0.511
0.464
0.434
0.400
0.387
0.352
0.353
0.377
ANG
15.2
30.0
44.5
59.1
73.3
87.7
100.0
112.4
126.4
138.9
149.1
163.0
177.2
169.2
154.8
MAG
2.671
2.589
2.488
2.365
2.247
2.104
1.955
1.796
1.728
1.613
1.510
1.435
1.372
1.301
1.296
ANG
165.4
151.2
138.3
125.1
113.0
101.9
92.3
82.5
75.6
67.8
61.3
54.4
49.1
43.4
38.6
MAG
0.063
0.107
0.156
0.198
0.219
0.246
0.260
0.260
0.267
0.249
0.272
0.272
0.271
0.275
0.293
ANG
78.9
71.0
64.3
53.7
47.0
41.9
33.2
32.8
30.5
27.0
27.0
27.0
28.6
28.5
26.8
MAG
0.987
0.954
0.901
0.848
0.781
0.726
0.650
0.607
0.555
0.526
0.516
0.485
0.446
0.439
0.438
ANG
9.7
18.4
27.4
35.4
42.3
48.6
53.8
58.8
63.5
67.0
69.4
75.3
78.2
80.7
85.1
V
CE
= 1 V, I
C
= 3 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
0.911
0.840
0.765
0.660
0.565
0.490
0.425
0.358
0.316
0.296
0.278
0.269
0.230
0.262
0.303
ANG
19.5
37.4
55.0
72.6
88.8
103.1
117.7
131.7
147.5
158.4
169.6
174.9
158.8
144.4
131.3
MAG
5.004
4.722
4.355
3.993
3.592
3.248
2.937
2.630
2.436
2.226
2.067
1.954
1.837
1.736
1.683
ANG
162.9
146.9
132.6
119.0
106.9
96.3
87.5
79.0
72.4
65.8
60.2
53.9
49.4
44.2
40.0
MAG
0.062
0.107
0.149
0.174
0.199
0.210
0.226
0.237
0.227
0.244
0.249
0.283
0.287
0.306
0.320
ANG
80.7
69.9
58.6
46.9
45.5
39.9
39.3
36.0
35.3
38.6
37.3
36.1
41.0
35.6
36.6
MAG
0.966
0.908
0.815
0.727
0.639
0.564
0.494
0.425
0.389
0.352
0.331
0.302
0.273
0.264
0.257
ANG
13.3
26.0
38.0
47.7
56.8
62.2
67.8
70.2
77.0
80.4
84.2
83.3
91.3
92.4
94.5
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