HTML datasheet archive (search documentation on electronic components) Search datasheet (1.687.043 components)
Search field

Datasheet: 2SC5178-T1 (NEC)

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

 

Download: PDF   ZIP
NEC
SILICON TRANSISTOR
FEATURES
Low current consumption and high gain
|S
21e
|
2
= 11.5 dB TYP. @ V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
|S
21e
|
2
= 10.5 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
4-pin Mini-Mold package
EIAJ: SC-61
ORDERING INFORMATION
PART
QUANTITY
ARRANGEMENT
NUMBER
2SC5178-T1
3000 units/reel
2SC5178-T2
3000 units/reel
*
Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
V
CBO
5
V
Collector to Emitter Voltage
V
CEO
3
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
10
mA
Total Power Dissipation
P
T
30
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
2SC5178
Document No. P12102EJ2V0DS00 (2nd edition)
(Previous No. TC-2475)
Date Published November 1996 N
Printed in Japan
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
PACKAGE DIMENSIONS
(Units: mm)
CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Embossed tape, 8 mm wide, pins
No. 3 (base) and No. 4 (emitter) facing
the perforations
Embossed tape, 8 mm wide, pins
No. 1 (collector) and No. 2 (emitter)
facing the perforations
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
0.4
+0.1 0.05
2.8
+0.2
0.3
1.5
+0.2
0.1
0.4
+0.1 0.05
0.6
+0.1 0.05
0.4
+0.1 0.05
1
2
3
4
0.850.95
(1.8)
2.90.2
(1.9)
0.16
+0.1 0.06
5
5
5
5
0 to 0.1
0.8
1.1
+0.2 0.1
T84
1994
DATA SHEET
1994
2SC5178
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Collector Cutoff Current
I
CBO
100
nA
V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current
I
EBO
100
nA
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
70
140
V
CE
= 2 V, I
C
= 7 mA
*1
Insertion Power Gain (1)
|S
21e
|
2
9.5
11.5
dB
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
Insertion Power Gain (2)
|S
21e
|
2
7.5
10.5
dB
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Noise Figure (1)
NF
1.5
2.0
dB
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
Noise Figure (2)
NF
1.5
2.0
dB
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Gain Bandwidth Product (1)
f
T
10.5
13.5
GHz
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
Gain Bandwidth Product (2)
f
T
8.5
12
GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Feedback Capacitance
C
re
0.3
0.5
pF
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
*2
*1.
Measured with pulses: Pulse width
350
s, duty cycle
2 %, pulsed
*2.
Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
h
FE
Class
Class
FB
Marking
T84
h
FE
70 to 140
2SC5178
3
CHARACTERISTICS CURVES (T
A
= 25
C)
T
A
Ambient Temperature C
P
T
Total Power Dissipation mW
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
I
C
Collector Current mA
V
CE
Collector to Emitter Voltage V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
BE
Base to Emitter Voltage V
I
C
Collector Current mA
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
200
0
50
100
150
50
40
30
20
10
0
0.5
1.0
25
20
15
10
5
0
1.0
2.0
3.0
A
200
A
180
A
160
A
140
A
120
A
100
A
80
A
60
A
40
A
20
I
B
=
V
CE
= 2 V
30 mW
I
C
Collector Current mA
f
T
Gain Bandwidth Product GHz
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
I
C
Collector Current mA
|S
21e
|
2
Insertion Power Gain dB
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
V
CE
= 1 V
2 V
18
16
14
12
10
8
6
4
1
2
5
10
f = 2 GHz
14
12
10
8
6
4
1
2
5
10
f = 2 GHz
V
CE
= 1 V
2 V
I
C
Collector Current mA
h
FE
DC Current Gain
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
10
20
50
1
2
5
10
20
50
100
V
CE
= 1 V
V
CE
= 2 V
2SC5178
4
NF Noise Figure dB
I
C
Collector Current mA
NOISE FIGURE vs.
COLLECTOR CURRENT
V
CB
Collector to Base Voltage V
C
re
Feed-back Capacitance pF
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
4
3
2
1
0
1
2
5
10
20
100
0.5
0.4
0.3
0.2
0.1
1.0
0
2.0
3.0
4.0
5.0
f = 2 GHz
f = 2 GHz
V
CE
= 1 V
V
CE
= 2 V
2SC5178
5
S-PARAMETER
V
CE
= 1 V, I
C
= 1 mA, Z
O
= 50
FREQUENCY
S
11
S
21
S
12
S
22
ANG
6.9
13.5
20.5
27.6
34.5
40.8
47.5
52.4
60.3
64.6
70.9
77.0
83.0
88.0
99.2
ANG
9.5
19.1
28.3
38.2
48.3
59.2
69.1
77.4
87.9
97.7
110.8
123.4
135.0
154.3
174.4
MAG
0.989
0.972
0.941
0.917
0.890
0.842
0.769
0.729
0.675
0.634
0.582
0.530
0.496
0.452
0.461
ANG
77.0
76.5
68.1
63.3
54.1
53.5
45.2
37.7
31.8
31.7
24.9
18.9
14.2
14.6
10.0
MAG
3.362
3.305
3.251
3.204
3.113
3.032
2.892
2.719
2.626
2.484
2.345
2.255
2.169
2.015
1.982
MAG
0.026
0.061
0.084
0.106
0.150
0.170
0.178
0.195
0.213
0.223
0.233
0.238
0.249
0.254
0.239
MAG
0.954
0.933
0.902
0.855
0.798
0.739
0.667
0.597
0.519
0.472
0.413
0.365
0.306
0.280
0.259
ANG
168.9
158.2
148.3
137.6
126.9
116.5
107.3
96.6
88.5
80.5
72.8
64.6
58.1
51.3
44.3
(MHz)
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
V
CE
= 1 V, I
C
= 3 mA, Z
O
= 50
FREQUENCY
S
11
S
21
S
12
S
22
ANG
11.6
22.2
30.8
38.1
45.4
49.8
54.3
60.1
66.0
69.6
75.8
76.7
85.6
92.0
99.7
ANG
16.5
31.1
45.0
56.7
69.1
80.2
90.7
100.1
114.0
125.8
142.7
168.6
162.2
148.5
127.6
MAG
0.968
0.899
0.816
0.727
0.673
0.600
0.537
0.496
0.437
0.419
0.374
0.333
0.304
0.284
0.287
ANG
68.5
72.2
64.4
53.7
53.5
52.5
47.1
41.7
40.1
34.6
33.4
30.6
28.2
29.8
24.2
MAG
8.193
7.559
6.833
6.147
5.496
4.936
4.427
3.975
3.672
3.347
3.066
2.893
2.715
2.530
2.438
MAG
0.030
0.054
0.075
0.095
0.115
0.120
0.140
0.141
0.163
0.181
0.176
0.199
0.202
0.214
0.218
MAG
0.878
0.789
0.694
0.589
0.501
0.423
0.340
0.280
0.221
0.196
0.157
0.160
0.135
0.181
0.204
ANG
161.7
145.1
130.9
118.1
106.8
96.9
88.7
80.0
73.1
66.4
60.4
53.8
48.4
42.5
36.8
(MHz)
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
2SC5178
6
V
CE
= 1 V, I
C
= 5 mA, Z
O
= 50
FREQUENCY
S
11
S
21
S
12
S
22
ANG
14.8
26.4
35.2
40.7
45.8
50.4
52.6
55.7
61.9
66.5
71.1
79.3
83.8
87.0
100.8
ANG
21.6
39.6
53.2
66.4
76.9
90.1
100.7
113.7
135.4
151.0
173.9
159.2
137.2
128.6
108.6
MAG
0.935
0.833
0.717
0.628
0.577
0.503
0.454
0.419
0.376
0.346
0.308
0.280
0.264
0.242
0.239
ANG
69.6
71.2
58.9
56.5
51.6
49.9
47.7
44.3
44.1
43.0
35.9
38.3
36.9
28.0
28.0
MAG
0.030
0.049
0.063
0.091
0.095
0.107
0.122
0.144
0.153
0.159
0.182
0.195
0.191
0.226
0.237
MAG
0.801
0.677
0.557
0.451
0.358
0.277
0.222
0.172
0.115
0.111
0.118
0.121
0.142
0.181
0.210
ANG
156.4
136.7
121.4
108.9
98.1
89.3
81.6
74.0
67.7
61.8
56.1
50.4
45.1
39.5
34.1
(MHz)
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
V
CE
= 1 V, I
C
= 7 mA, Z
O
= 50
FREQUENCY
S
11
S
21
S
12
S
22
ANG
16.6
28.3
35.6
40.4
43.6
47.5
50.8
53.5
58.7
64.2
67.2
73.0
79.0
82.0
90.8
ANG
26.3
44.8
59.2
71.0
83.3
95.5
112.2
136.4
159.6
178.8
148.2
127.4
117.8
112.4
109.7
MAG
0.900
0.782
0.664
0.585
0.530
0.476
0.434
0.405
0.363
0.334
0.315
0.290
0.274
0.266
0.264
ANG
74.3
67.6
67.1
60.2
58.6
56.9
51.4
50.9
46.9
45.9
41.3
40.2
38.8
32.0
31.0
MAG
0.024
0.047
0.060
0.075
0.094
0.103
0.120
0.129
0.140
0.155
0.174
0.180
0.187
0.206
0.229
MAG
0.732
0.593
0.453
0.341
0.254
0.193
0.144
0.118
0.088
0.084
0.099
0.134
0.175
0.212
0.265
ANG
152.5
130.9
115.8
103.6
93.7
85.6
78.5
71.4
65.8
60.2
54.8
49.3
44.7
39.6
33.9
(MHz)
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
11.278
9.808
8.302
7.123
6.140
5.377
4.737
4.198
3.838
3.476
3.178
2.982
2.795
2.589
2.489
MAG
13.376
10.989
8.954
7.441
6.267
5.441
4.757
4.207
3.814
3.464
3.167
2.939
2.771
2.578
2.476
2SC5178
7
V
CE
= 2 V, I
C
= 1 mA, Z
O
= 50
FREQUENCY
S
11
S
21
S
12
S
22
ANG
6.3
12.6
19.0
25.7
31.9
37.5
44.8
50.0
56.2
61.8
66.6
72.4
77.6
82.8
90.5
ANG
8.7
17.7
25.9
35.3
45.2
54.2
63.4
73.6
81.4
92.5
102.0
112.4
127.2
140.6
159.0
MAG
0.997
0.976
0.953
0.927
0.901
0.860
0.800
0.760
0.717
0.670
0.616
0.561
0.524
0.509
0.498
ANG
81.7
77.2
71.5
65.9
60.3
54.1
43.6
40.5
37.2
32.3
28.3
23.9
20.4
13.3
10.6
MAG
0.029
0.054
0.075
0.102
0.121
0.143
0.168
0.177
0.198
0.198
0.201
0.228
0.221
0.224
0.228
MAG
0.955
0.941
0.899
0.864
0.824
0.757
0.695
0.623
0.548
0.503
0.429
0.392
0.310
0.289
0.248
ANG
169.5
159.3
149.7
139.5
129.4
119.3
110.2
99.8
91.7
83.9
76.0
68.4
61.2
54.4
48.0
(MHz)
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
V
CE
= 2 V, I
C
= 3 mA, Z
O
= 50
FREQUENCY
S
11
S
21
S
12
S
22
ANG
10.2
19.7
28.0
34.5
40.6
45.6
50.6
54.8
60.1
63.6
68.2
72.2
80.1
85.2
91.8
ANG
14.6
28.4
40.8
52.1
61.9
72.6
80.4
88.6
98.4
112.1
122.0
144.3
170.2
165.8
134.5
MAG
0.971
0.924
0.850
0.771
0.703
0.651
0.589
0.525
0.487
0.461
0.427
0.392
0.359
0.332
0.330
ANG
74.3
78.5
67.8
56.4
54.9
49.8
47.8
44.6
40.2
42.0
37.5
36.8
33.3
28.3
26.6
MAG
0.026
0.049
0.070
0.087
0.101
0.116
0.122
0.138
0.153
0.161
0.172
0.191
0.180
0.192
0.203
MAG
0.877
0.807
0.723
0.624
0.531
0.442
0.380
0.292
0.249
0.208
0.167
0.142
0.115
0.140
0.154
ANG
162.6
147.0
133.6
120.8
109.6
100.0
91.6
83.0
76.1
69.5
63.0
56.9
51.4
45.6
40.2
(MHz)
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
3.382
3.329
3.274
3.246
3.188
3.101
2.976
2.797
2.721
2.601
2.430
2.376
2.269
2.134
2.112
MAG
8.210
7.644
6.973
6.331
5.727
5.160
4.647
4.192
3.880
3.553
3.276
3.074
2.915
2.697
2.606
2SC5178
8
V
CE
= 2 V, I
C
= 5 mA, Z
O
= 50
FREQUENCY
S
11
S
21
S
12
S
22
ANG
12.9
23.3
31.0
37.1
42.0
46.1
48.7
52.0
55.2
60.2
64.4
69.5
76.1
77.7
86.6
ANG
18.8
35.7
47.4
59.2
68.4
78.3
86.5
94.3
110.4
120.7
143.0
174.9
149.7
125.6
116.1
MAG
0.945
0.862
0.760
0.673
0.612
0.559
0.496
0.460
0.417
0.403
0.368
0.329
0.307
0.296
0.276
ANG
89.7
66.9
68.2
58.5
56.1
52.1
53.7
48.5
49.4
43.7
40.5
40.7
35.9
37.7
32.4
MAG
0.026
0.044
0.061
0.082
0.102
0.101
0.119
0.134
0.147
0.145
0.168
0.186
0.196
0.201
0.237
MAG
0.802
0.700
0.588
0.483
0.387
0.308
0.258
0.193
0.139
0.116
0.075
0.094
0.086
0.131
0.164
ANG
157.7
138.7
124.1
111.5
100.9
92.0
84.5
76.8
70.8
64.7
59.1
53.1
48.0
42.8
37.2
(MHz)
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
V
CE
= 2 V, I
C
= 7 mA, Z
O
= 50
FREQUENCY
S
11
S
21
S
12
S
22
ANG
14.3
24.8
31.5
37.0
40.7
43.5
45.0
48.8
51.4
57.7
60.3
66.6
72.3
74.1
78.8
ANG
22.1
39.0
50.8
61.0
70.4
78.7
87.7
96.9
108.7
128.1
178.5
145.7
122.4
118.8
107.8
MAG
0.925
0.823
0.714
0.639
0.587
0.528
0.487
0.448
0.421
0.397
0.378
0.341
0.321
0.310
0.321
ANG
79.8
66.8
64.8
57.5
58.3
60.1
57.2
53.2
53.1
48.0
45.1
46.8
39.2
36.6
33.2
MAG
0.025
0.042
0.060
0.068
0.086
0.100
0.106
0.118
0.131
0.143
0.166
0.161
0.183
0.197
0.193
MAG
0.754
0.620
0.501
0.376
0.298
0.224
0.177
0.132
0.080
0.058
0.036
0.067
0.104
0.141
0.205
ANG
154.1
133.6
118.7
106.6
96.7
88.5
81.7
74.4
69.0
63.3
57.9
52.8
48.0
43.2
37.7
(MHz)
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
11.437
10.038
8.649
7.480
6.479
5.695
5.044
4.494
4.112
3.746
3.429
3.204
3.040
2.805
2.701
MAG
13.572
11.414
9.431
7.926
6.730
5.860
5.137
4.552
4.145
3.769
3.425
3.217
3.026
2.819
2.735
2SC5178
9
[MEMO]
2SC5178
10
[MEMO]
2SC5178
11
[MEMO]
2SC5178
10
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:
Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
© 2018 • ICSheet
Contact form
Main page