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Datasheet: 2SA1714 (NEC)

Pnp Silicon Epitaxial Power Transistor (darlington Connection) For High-speed Switching

 

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Document No. D16124EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SA1714
PNP SILICON EPITAXIAL POWER TRANSISTOR
(DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1714 is a high-speed darlington power transistor. This
transistor is ideal for high-precision control such as PWM control for
pulse mortors or blushless mortor of OA and FA equipment.
FEATURES
High DC current amplifiers due to darlington connection
Large current capacitance and low V
CE(sat)
TO-126 power transistor with high power dissipation
Complementary transistor with 2SC4342
QUALITY GRADES
Standard
Please refer to "Quality Grades on NEC Semiconductor Devices"
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25



C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
-100
V
Collector to emitter voltage
V
CEO
-100
V
Emitter to base voltage
V
EBO
-8.0
V
Collector current (DC)
I
C(DC)
+3.0
A
Collector current (pulse)
I
C(pulse)
*
+6.0
A
Base current (DC)
I
B(DC)
-0.3
A
Total power dissipation
P
T
(Ta = 25
C)
1.3
W
Total power dissipation
P
T
(Tc = 25
C)
12
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Emitter
2. Collector
3. Base
4. Fin (collector)
* PW
10 ms, duty cycle 50%
Data Sheet D16124EJ1V0DS
2
2SA1714
ELECTRICAL CHARACTERISTICS (Ta = 25



C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
V
CEO(SUS)
I
C
=
-3.0 A, I
B
=
-3.0 mA, L = 1.0 mH
-100
V
Collector cutoff current
I
CBO
V
CB
=
-100 V, I
E
= 0
-10
A
Collector cutoff current
I
CEO
V
CE
=
-100 V, R
BE
=
-10
A
DC current gain
h
FE1
**
V
CE
=
-2.0 V, I
C
=
-1.5 A
2,000
20,000
-
DC current gain
h
FE2
**
V
CE
=
-2.0 V, I
C
=
-3.0 A
1,000
-
Collector saturation voltage
V
CE(sat)
**
I
C
=
-1.5 A, I
B
=
-1.5 mA
-0.9
-1.2
V
Base saturation voltage
V
BE(sat)
**
I
C
=
-1.5 A, I
B
=
-1.5 mA
-1.5
-2.0
V
Turn-on time
t
on
0.15
s
Storage time
t
stg
1.2
s
Fall time
t
f
I
C
=
-1.5 A, I
B1
=
-I
B2
=
-1.5 mA,
R
L
= 33
, V
CC
-50 V
Refer to the test circuit.
0.6
s
** Pulse test PW
350
s, duty cycle 2%/pulsed
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE1
2,000 to 5,000
4,000 to 10,000
8,000 to 20,000
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
Data Sheet D16124EJ1V0DS
3
2SA1714
TYPICAL CHARACTERISTICS (Ta = 25



C)
Without heatsink
With infinite heatsink
Data Sheet D16124EJ1V0DS
4
2SA1714
Data Sheet D16124EJ1V0DS
5
2SA1714
[MEMO]
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