HTML datasheet archive (search documentation on electronic components) Search datasheet (1.687.043 components)
Search field

Datasheet: 2SA1222 (NEC)

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

 

Download: PDF   ZIP
NEC

Document Outline

1998
Document No. D16143EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTORS
2SA1221, 1222
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Ideal for use of high withstanding voltage current such as TV
vertical deflection output, audio output, and variable power
supplies.
Complementary transistor with 2SC2958 and 2SC2959
V
CEO
= 140 V: 2SA1221/2SC2958
V
CEO
= 160 V: 2SA1222/2SC2959
ABSOLUTE MAXIMUM RATINGS (Ta = 25



C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
-160
V
Collector to emitter voltage
V
CEO
-140/160
V
Emitter to base voltage
V
EBO
-5.0
V
Collector current (DC)
I
C(DC)
-500
mA
Collector current (pulse)
I
C(pulse)
*
-1.0
A
Total power dissipation
P
T
1.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
* PW
10 ms, duty cycle 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25



C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-100 V, I
E
= 0
-200
nA
Emitter cutoff current
I
EBO
V
EB
=
-5.0 V, I
C
= 0
-200
nA
DC current gain
h
FE
**
V
CE
=
-2.0 V, I
C
=
-100 mA
100
150
400
DC base voltage
V
BE
**
V
CE
=
-5.0 V, I
C
=
-20 mA
-0.6
-0.64
-0.7
V
Collector saturation voltage
V
CE(sat)
**
I
C
=
-1.0 A, I
B
=
-0.2 A
-0.6
-0.9
V
Base saturation voltage
V
BE(sat)
**
I
C
=
-1.0 A, I
B
=
-0.2 A
-1.1
-0.3
V
Output capacitance
C
ob
V
CB
=
-10 V, I
E
= 0, f = 1.0 MHz
24
40
pF
Gain bandwidth product
f
T
V
CE
=
-10 V, I
E
= 20 mA
30
45
MHz
** Pulse test PW
350
s, duty cycle 2% per pulsed
'DWD 6KHHW '(-9'6
6$
K
)(
&/$66,),&$7,21
0DUNLQJ
0
/
.
K
)(
WR
WR
WR
7<3,&$/ &+$5$&7(5,67,&6 7D &
'DWD 6KHHW 'DWD 6KHHW '(-9'6
6$
6$
M8E 00. 4
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special":
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
© 2018 • ICSheet
Contact form
Main page