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Datasheet: 2SA1129 (NEC)

Pnp Silicon Epitaxial Transistor For Low-frequency Power Amplifiers and Mid-speed Switching

 

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Document No. D14856EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1129
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1129 is a mold power transistor developed for mid-speed
switching, and is ideal for use as a ramp driver.
FEATURES
Large current capacity with small package: I
C(DC)
=
-7.0 A
Low collector saturation voltage:
V
CE(sat)
=
-0.3 V MAX. @I
C
=
-3.0 A, IB = -0.1 A
Complementary transistor: 2SC2654
ABSOLUTE MAXIMUM RATINGS (T
A
= 25



C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
-30
V
Collector to emitter voltage
V
CEO
-30
V
Emitter to base voltage
V
EBO
-7.0
V
Collector current (DC)
I
C(DC)
-7.0
A
Collector current (pulse)
I
C(pulse)
PW
300
s,
duty cycle
10%
-15
A
Base current (DC)
I
B(DC)
-3.5
A
T
C
= 25
C
40
W
Total power dissipation
P
T
T
A
= 25
C
1.5
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
ORDERING INFORMATION
Part No.
Package
2SA1129
TO-220AB
(TO-220AB)
Data Sheet D14856EJ2V0DS
2
2SA1129
ELECTRICAL CHARACTERISTICS (T
A
= 25



C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-30 V, I
E
= 0 A
-10
A
Emitter cutoff current
I
EBO
V
EB
=
-5.0 V, I
C
= 0 A
-10
A
DC current gain
h
FE1
V
CE
=
-1.0 V, I
C
=
-3.0 A
Note
40
200
DC current gain
h
FE2
V
CE
=
-1.0 V, I
C
=
-5.0 A
Note
20
Collector saturation voltage
V
CE(sat)1
I
C
=
-3.0 A, I
B
=
-0.1 A
Note
-0.3
V
Collector saturation voltage
V
CE(sat)2
I
C
=
-5.0 A, I
B
=
-0.5 A
Note
-0.6
V
Base saturation voltage
V
BE(sat)1
I
C
=
-3.0 A, I
B
=
-0.1 A
Note
-1.5
V
Base saturation voltage
V
BE(sat)2
I
C
=
-5.0 A, I
B
=
-0.5 A
Note
-2.0
V
Turn-on time
t
on
1.0
s
Storage time
t
stg
2.5
s
Fall time
t
f
I
C
=
-5.0 A, R
L
= 4.0
,
I
B1
=
-I
B2
=
-0.5 A, V
CC
-20 V
PW = 50
s, duty cycle = 2%
1.0
s
Note Pulse test PW
350
s, duty cycle 2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE1
40 to 80
60 to 120
100 to 200
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
Data Sheet D14856EJ2V0DS
3
2SA1129
TYPICAL CHARACTERISTICS (T
A
= 25



C)
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Data Sheet D14856EJ2V0DS
4
2SA1129
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Data Sheet D14856EJ2V0DS
5
2SA1129
PACKAGE DRAWING (UNIT: mm)
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