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Datasheet: 2SA1069 (NEC)

 

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NEC

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Silicon Power Transistor
2SA1069, 1069A
PNP
D14855JJ3V0DS00
3
(
TC-5397A
May 2000 NS CP(K)
1988, 2000
2SA1069,1069A
DC/DC
T
A
= 25



C
2SA1069/2SA1069A
V
CBO
-
80
V
V
CEO
-
60 / 80
V
V
EBO
-
12
V
I
C(DC)
-
5.0
A
(
)
I
C(pulse)
PW
300
s,
Duty Cycle
10 %
-
10
A
I
B(DC)
-
2.5
A
P
T
T
C
= 25
C
30
W
T
A
= 25
C
1.5
W
T
j
150
C
T
stg
55
+150
C
2SA1069
2SA1069A
TO-220AB
(TO-220AB)
2SA1069,1069A
D14855JJ3V0DS00
2
T
A
= 25



C
2SA1069 / 2SA1069A
MIN.
TYP.
MAX.
V
CEO(SUS)
I
C
= 3.0 A, I
B1
= 0.3
A, L = 1 mH
60/80
V
V
CEX(SUS)1
I
C
= 3.0 A, I
B1
= I
B2
= 0.3
A,
V
BE(OFF)
= 5.0 V, L = 180
H, Clamped
60/80
V
V
CEX(SUS)2
I
C
= 6.0 A, I
B1
= 0.6
A, I
B2
= 0.3 A,
V
BE(OFF)
= 5.0 V, L = 180
H, Clamped
60/80
V
I
CBO
V
CB
= 60 / 80
V, I
E
= 0 A
10
A
I
CER
V
CE
= 60 / 80
V, R
BE
= 51
,
T
A
= 125
1.0
mA
I
CEX1
V
CE
= 60 / 80
V, V
BE(OFF)
= 1.5V
10
A
I
CEX2
V
CE
= 60 / 80
V, V
BE(OFF)
= 1.5V,
T
A
= 125
1.0
mA
I
EBO
V
EB
= 5.0
V, I
C
= 0 A
10
A
h
FE1
V
CE
= 5.0
V, I
C
= 0.3 A
40
h
FE2
V
CE
= 5.0
V, I
C
= 3.0 A
40
200
V
CE(sat)
I
C
= 3.0 A, I
B
= 0.3 A
0.6
V
V
BE(sat)
I
C
= 3.0 A, I
B
= 0.3 A
1.5
V
t
on
I
C
= 3.0 A, R
L
= 17
,
0.5
s
t
stg
I
B1
= I
B2
= 0.3 A, V
CC
50 V
2.5
s
t
f
0.5
s
PW
350
s, Duty Cycle
2 %
h
FE
M
L
K
h
FE2
40
80
60
120
100
200
t
on
t
stg
t
f
V
CC
R
L
I
B1
I
B2
I
C
I
C
T.U.T.
V
IN
PW
PW
50 s
V
BB
5.0 V
Duty Cycle
2 %
t
on
t
stg
t
f
90 %
I
B1
I
B2
10 %
2SA1069,1069A
D14855JJ3V0DS00
3
T
A
= 25



C
TOTAL POWER DISSIPATION vs. CASE
TEMPERATURE
T
C
(C)
P
T
(W)
0
-
25
100
50
150
50
40
30
20
10
0
FORWARD BIAS SAFE OPERATING AREA
-
10
-
100
-
1000
I
C
(A)
-
1
-
V
CE
(V)
-
30
-
10
-
1
-
0.1
-
0.03
Single Pulse
PW
= 30
s
100
s
300
s
1 ms
10
ms
100
ms
Dissipation
Limited
S/b Limited
2SA1069
2SA1069A
I
C(pulse)
I
C(DC)
DERATING CURVE OF SAFE OPERATING AREA
T
C
(C)
dT (%)
0
50
100
150
100
80
60
40
20
0
s/b Limited
Dissipation Limited
TRANSIENT THERMAL RESISTANCE
PW (ms)
r
th(j-c)
(C/W)
1
0.01
0.1
1
0.01
0.1
10
10
100
V
CE
=
-
20 V
T
j
= 50 C
REVERSE BIAS SAFE OPERATING AREA
0
-
40
-
80
-
120
-
10
-
8
-
6
-
4
-
2
0
2SA1069
2SA1069A
-
V
CE
(V)
I
C
(A)
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
0
-
2
-
1
-
3
-
4
-
5
-
5
-
4
-
3
-
2
-
1
0
-
20 mA
-
30 mA
-
40 mA
-
V
CE
(V)
I
C
(A)
I
B
=
-
10 mA
-
80 mA
-
90 mA
-
50 mA
-
60 mA
-
70 mA
-
100 mA
2SA1069,1069A
D14855JJ3V0DS00
4
DC CURRENT GAIN vs. COLLECTOR CURRENT
I
C
(A)
h
FE
10
1
-
0.01
100
1000
-
0.1
-
10
-
1
V
CE
=
-
5.0 V
T
A
= 125C
75C
25C
-
25C
COLLECTOR AND BASE SATURATION
I
C
(A)
V
BE(sat)
(V)
V
CE(sat)
(V)
-
0.1
-
0.01
-
0.01
-
1.0
-
10
-
0.1
-
10
-
1
I
C
= 10 A
I
B
VOLTAGE vs. COLLECTOR CURRENT
V
BE(sat)
V
CE(sat)
TURN ON TIME, STORAGE TIME AND FALL TIME
I
C
(A)
t
f
( s)
0.1
0.01
1.0
10
-
0.1
-
0.5
-
10
-
1
-
5
I
C
= 10
I
B1
=
-
10
I
B2
vs. COLLECTOR CURRENT
t
stg
( s)
t
on
( s)
t
f
t
stg
t
on
2SA1069,1069A
D14855JJ3V0DS00
5
mm
4.8 MAX.
1.
2.
3.
4.
()
1 2 3
10.6 MAX.
10.0
3.60.2
4
3.00.3
1.30.2
0.750.1
2.54 TYP.
2.54 TYP.
5.9 MIN.
6.0 MAX.
15.5 MAX.
12.7 MIN.
1.30.2
0.50.2
2.80.2
TO-220AB (MP-25)
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