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Datasheet: 2S4M (NEC)

THYRISTORS 2A HIGH-SPEED SWITCHING SCR

 

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NEC

Document Outline

1998
Document No. D13535EJ2V0DS00 (2nf edition)
Date Published April 2002 N CP(K)
Printed in Japan
THYRISTORS
2S2M, 2S4M
2 A HIGH-SPEED SWITCHING SCR
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2S2M and 2S4M are P-gate fully diffused mold SCRs
with an average on-current of 2 A. The repeat peak off-voltages
(and reverse voltages) are 200 V and 400 V.
FEATURES
This transistor is designed for high-speed switching and is
deal for use in commercial frequencies, high-frequency pulse
applications, and inverter applications.
This transistor features a small and lightweight package and
is easy to handle even on the mounting surface due to its
TO-202AA dimensions. Processing of lead wires and
heatsink (tablet) using jigs is also possible.
Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Consumer electronic euipments, ignitors of devices for light
indutry, inverter, and solenoid valve drives
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25



C)
Parameter
Symbol
2S2M
2S4M
Ratings
Unit
Non-repetitive peak reverse voltage
V
RSM
300
500
V
R
GK
= 1 k
Non-repetitive peak off-state voltage
V
DSM
300
500
V
R
GK
= 1 k
Repetitive peak reverse voltage
V
RRM
200
400
V
R
GK
= 1 k
Repetitive peak off-voltage
V
DRM
200
400
V
R
GK
= 1 k
Average on-state current
I
T(AV)
2 (Tc = 77
C, Single half-wave,
= 180)
A
Refer to Figure 6 snd 7.
Surge on-state current
I
TSM
20 (f = 50 Hz, Sine half-wave, 1 cycle)
A
Refer to Figure 2.
High-frequency peak on-state current
I
TRM
15 (Tc = 65
C, f = 10 kp.p.s, t
p
= 10
s)
A
-
Fusing current
i
t
2
dt
1.6 (1 ms
t10 ms)
A
2
s
-
Critical rate of rise of on-state current
dI
T
/dt
50
A/
s
-
Peak gate power dissipation
P
GM
0.5 (f
50 Hz, Duty10%)
W
-
Average gate power dissipation
P
G(AV)
0.1
W
Peak gate forward current
I
FGM
0.2 (f
50 Hz, Duty10%)
A
-
Peak gate reverse voltage
V
RGM
6
V
-
Junction temperature
T
j
-40 to +125
C
-
Storage temperature
T
stg
-55 tp +150
C
-
Electrode connection
<1>Cathode
<2>Anode
<3>Gate
Standard weight: 1.4
*TC test bench-mark
Data Sheet D13535EJ2V0DS
2
2S2M, 2S4M
ELECTRICAL CHARACTERISTICS (T
j
= 25



C, R
GK
= 1 k
)
Parameter
Symbol
Conditions
Specifications
Unit
Remarks
MIN.
TYP.
MAX.
T
j
= 25
C
10
A
-
Repeat peak off-state
current
I
DRM
V
DM
= V
DRM
T
j
= 125
C
200
-
T
j
= 25
C
10
A
-
Repetitive peak reverse
current
I
RRM
V
RM
= V
RRM
T
j
= 125
C
200
V
Refer to Figure 1.
On voltage
V
TM
T
j
= 25
C, I
TM
= 4 A
-
-
2.2
V
Refer to Figure 9.
Gate trigger voltage
V
GT
V
DM
= 6 V, R
L
= 100
-
-
0.8
A
Refer to Figure 8.
Gate trigger current
I
GT
V
DM
= 6 V, R
L
= 100
-
-
300
V
-
Gate non-trigger voltage
V
GD
T
j
= 125
C, V
DM
=
1
2
V
DRM
0.2
-
-
V
-
Critical rate of-rise of off-
state voltage
d
V
/dt
T
j
= 125
C, V
DM
=
2
3
V
DRM
10
-
-
V/
s
-
Holding current
I
H
T
j
= 25
C, V
D
= 24 V
-
-
10
mA
-
Commutating turn-off time
T
q
T
j
= 125
C, I
T
= 2 A
V
DM
=
2
3
V
DRM
, V
R
= 50 V
d
V
/dt = 10 V/
s
-
15
s
Turn-on time
T
gt
T
j
= 125
C, V
DM
=
2
3
V
DRM
I
TM
= 30 A
I
G
= 5 mA, t
1G
= 5
s
-
-
2
s
-
R
th(j-c)
Junction-to-case DC
-
-
10
C/W Refer to Figure 13.
Thermal resistance
R
th(j-a)
Junction-to-ambient DC
-
-
75
TYPICAL CHARACTERISTICS (Ta = 25



C)
Data Sheet D13535EJ2V0DS
3
2S2M, 2S4M
Data Sheet D13535EJ2V0DS
4
2S2M, 2S4M
Data Sheet D13535EJ2V0DS
5
2S2M, 2S4M
[MEMO]
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