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Datasheet: 1SS303 (NEC)

Silicon Switching Diodes

 

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1987
SILICON SWITCHING DIODE
1SS303
HIGH SPEED SWITCHING
SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE
DATA SHEET
Document No. D16308EJ2V0DS00 (2nd edition)
(Previous No. DC-2100)
Date Published July 2002 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Low capacitance: C
t
= 2.5 pF TYP.
High speed switching: t
rr
= 4.0 ns MAX.
Wide applications including switching, limitter, clipper.
Double diode configuration assures economical use.
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (T
A
= 25C)
Peak Reverse Voltage
V
RM
75
V
DC Reverse Voltage
V
R
50
V
Surge Current (1
s)
Note
I
FSM
6.0
A
Surge Current (1
s)
I
FSM
4.0
A
Peak Forward Current
Note
I
FM
450
mA
Peak Forward Current
I
FM
300
mA
Average Rectified Current
Note
I
O
150
mA
Average Rectified Current
I
O
100
mA
Maximum Temperatures
Junction Temperature
T
j
150
C
Storage Temperature Range
T
stg
55 to + 150
C
Thermal Resistance
Junction to Ambient
Note
R
th(j-a)
1.0
C/mW
Junction to Ambient
R
th(j-a)
0.85
C/mW
Note Both diodes loaded simultaneously.
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F1
I
F
= 10 mA
0.72
1.0
V
V
F2
I
F
= 50 mA
0.88
1.1
V
Forward Voltage
V
F3
I
F
= 100 mA
1.0
1.2
V
Reverse Current
I
R
V
R
= 50 V
0.1
A
Capacitance
C
t
V
R
= 0 V, f = 1.0 MHz
2.5
4.0
pF
Reverse Recovery Time
t
rr
See Test Circuit.
4.0
ns
PACKAGE DIMENSIONS (Unit: mm)
2.1
0.1
1.25
0.1
2.0
0.2
0.9
0.1
3
Marking
2
1
0.3
+
0.1
-
0
0.15
+
0.1
-
0.05
0.3
0.65
0 to 0.1
0.3
0.65
+
0.1
-
0
CONNECTION DIAGRAM (Top View)
2
1
3
1. Cathode
2. Cathode
3. Anode
Marking : A4
Data Sheet D16308EJ2V0DS
2
1SS303
TYPICAL ELECTRICAL CURVES (T
A
= 25C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
V
F
- Forward Voltage - V
0
0.1
0.2
0.5
1
2
5
10
20
50
100
0.2
0.4
0.6
0.8
1.0
1.2
I
F
- F
orw
ard Current - mA
TERMINAL CAPACITANCE vs.
REVERSE VOLTAGE
V
R
- Reverse Voltage - V
0.5
1
2
5
10
20
50
100
0.1
0.2
0.5
1
2
5
10
20
C
t
-
T
e
r
minal Capacitance - pF
REVERSE CURRENT vs.
REVERSE VOLTAGE
V
R
- Reverse Voltage - V
0
10
20
30
40
50
0.2
0.5
1
2
5
10
20
50
100
I
R
- Re
v
erse Current -
A
REVERSE RECOVERY TIME vs.
FORWARD CURRENT
I
F
- Forward Current - mA
0
20
40
60
80
100
4
8
12
16
20
t
rr
- Re
v
erse Reco
v
e
r
y

Time - ns
Data Sheet D16308EJ2V0DS
3
1SS303
REVERSE RECOVERY TIME (t
rr
) TEST CIRCUIT
Pulse
Generator
(50
)
Sampling
Oscilloscope
(50
)
DC
Source
Trigger
0.02
F
D.U.T.
3 k
+
-
I
F
= 10 mA, V
R
= 6.0 V, R
L
= 100
i
rr
= 0.1
I
r
Input Voltage
Waveform to Diode
Output Current
Waveform in Diode
V
F
I
F
V
R
I
r
0
0
t
rr
0.1
I
r
1SS303
M8E 00. 4
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