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Datasheet: M1T1LT18FE32E (MoSys)

Standard 1T-SRAM Macros

 

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Low Power Flow-through 1-Mbit (32Kx32)
Standard 1T-SRAM
Embedded Memory Macro
M1T1LT18FE32E
M1T1LT18FE32E Rev1_02
Page 1
2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94085
Low Power 1T-SRAM Standard Macro
10-83 MHz operation
1-Clock cycle time
Flow-through read access timing
Early write mode timing
32-Bit wide data buses
Byte Write Enables
Simple standard SRAM interface
Fast
delivery
Ultra-Dense Memory
3.6mm
2
size per macro instance
Redundancy & fuses included in macro area
Silicon-Proven 1T-SRAM Technology
Qualification programs completed
Products in volume production
High Yield and Reliability
Built-in redundancy for enhanced yield
Standard Logic Process
TSMC 0.18m CL018G process
Logic design rules
Uses 4 metal layers
Routing over macro possible in layers 5+
Power
Single voltage 1.8V Supply
Low power consumption

General Description
The M1T1LT18FE32E is a 1Mbit (1,084,576 bits), low power, embedded 1T-SRAM macro. The
M1T1LT18FE32E is organized as 32K(32,768) words of 32 bits. The macro employs a flow-through read
timing interface with early write timing. Write control over individual bytes in the input data is achieved through
the use of the byte write enable (bweb) input signals. The M1T1LT18FE32E macro is implemented using
MoSys 1T -SRAM technology, resulting in extremely high density and low power.
Low Power Flow-through 1-Mbit (32Kx32)
Standard 1T-SRAM
Embedded Memory Macro
M1T1LT18FE32E
M1T1LT18FE32E Rev1_02
Page 2
2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94085
Memory Interface Signal List
Signal Name
Valid
Logic Direction
Description
adr[14:0]
Positive clk edge
Positive
Input
Memory address
bwe[3:0]
Positive clk edge
Negative
Input
Memory byte write enables
bweb[n] = 0 enables data write
bweb[n] = 1 disables data write
bweb[3] controls writing of din[31:24]
bweb[2] controls writing of din[23:16]
bweb[1] controls writing of din[15:8]
bweb[0] controls writing of din[7:0]
rdb
Positive clk edge
Negative
Input
Memory read
wrb
Positive clk edge
Negative
Input
Memory write
ssb[3:0]
Positive clk edge
Positive
Input
Speed Select
din[31:0]
Positive clk edge
Positive
Input
Memory data in bus
dout[31:0]
Negative clk edge
Positive
Output
Memory data out bus
rstb
Positive clk edge
Negative
Input
Memory initialization reset
clk Clock
Positive
Input
Memory
Clock
mvddcore
Memory core supply voltage
mvsscore
Memory core ground
mvdd
Memory interface supply voltage
mvss
Memory interface ground
Recommended Operating Conditions
Symbol Parameter Condition
Min
Max
Units
VDD Supply Voltage Range (1.8V
10%)
Operating 1.62
1.98 V
TJ
Junction Temperature
Nominal VDD 0
125 C
tCYC
Cycle Time
Operating 12
100 ns
tCKH
Clock High
Operating
0.45*tCYC 0.55*tCYC
ns
tCKL Clock
Low
Operating
0.45*tCYC 0.55*tCYC
ns
Power Requirements
Symbol
Condition
Current per Instance
Units
IDD1
Operating current, V
DD
=1.8V, clock frequency =
83MHz, memory accessed every clock
0.5 mA/Mhz
IDD2
Standby current, V
DD
=1.8V, clock frequency =
20MHz, , memory not accessed
1.4 mA
Input Loading
Symbol
Condition
Load Capacitance
Units
CDIN
din signal input loading
0.4
pF
CADR
adr signal input loading
0.4
pF
CCTL
rdb, wrb and bweb signal input loading
0.4
pF
CCLK
clk signal input loading
1.0
pF
Low Power Flow-through 1-Mbit (32Kx32)
Standard 1T-SRAM
Embedded Memory Macro
M1T1LT18FE32E
M1T1LT18FE32E Rev1_02
Page 3
2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94085
AC Timing Characteristics
All times in nanoseconds
Bolded numbers reflect worst case design parameters
Parameter Description Condition Slow Typical Fast
tAS
Address Setup
Min.
1.5
1.3 1.1
tAH Address
Hold
Min.
1.5
1.3 1.1
tCS Control
Setup
Min.
1.5
1.3 1.1
tCH Control
Hold
Min.
1.5
1.3 1.1
tSS Speed
Setup
Min.
3.0
2.6 2.2
tSH Speed
Hold
Min.
1.0
0.9 0.8
tDS
Write Data Setup
Min.
1.5
1.3 1.1
tDH
Write Data Hold
Min.
1.5
1.3 1.1
tKQ
Clock to Data Valid
Max.
3.0
2.5 2.0
tKQE
Data valid extrinsic delay per pF
Max.
0.8
0.6 0.4
tKQX
Clock to Data not valid
Min.
0.3
0.2
0.1
A weak buffer (bus holder) will drive the data after the rising edge of the clock immediately following a read
cycle until tKQX






















AC Timing
Low Power Flow-through 1-Mbit (32Kx32)
Standard 1T-SRAM
Embedded Memory Macro
M1T1LT18FE32E
M1T1LT18FE32E Rev1_02
Page 4
2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94085

Memory macro implements a synchronous reset to force state machines into a known state after power-up.
This reset does not clear the memory contents. The clock must be running for at least two cycles before the
Reset (rstb) signal will be correctly sampled as shown above. The Reset (rstb) signal must be active for at
least ten (10) clock periods to initialize all internal circuitry. Independent of the Reset (rstb) signal, after power
has stabilized to a voltage within the operating specification and the clock is operating within its timing
specifications, there must be at least 128 clock cycles before any read or write access.
clk
rdb or wrb
rstb
>10 clk
>128 clk
Initialization Timing


S
PEED
S
ELECTION

On this particular macro, the ssl[3:0] signals should be set to a value dependent on the clk memory clock
frequency according to the following table to optimize performance:
ss[3] ssl[2] ss{[1] ss[0]
Clock
frequency
0 1 1 1
70-83
MHz
0 1 1 0
60-70
MHz
0 1 0 1
50-60
MHz
0 1 0 0
40-50
MHz
0 0 1 1
30-40
MHz
0 0 1 0
20-30
MHz
0 0 0 1
10-20
MHz
0 0 0 0
Reserved
1 X X X
Test
Mode
Low Power Flow-through 1-Mbit (32Kx32)
Standard 1T-SRAM
Embedded Memory Macro
M1T1LT18FE32E
M1T1LT18FE32E Rev1_02
Page 5
2001 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94085

O
PERATION
T
RUTH
T
ABLE
rdb wrb
Operation
0 0
Illegal
0 1
Read
1 0
Write
1 1
Nop
F
UNCTIONAL
O
PERATION
Address and command clocked in by rising clock edge. Both read and write data transfers occur in the
same clock cycle.












Single Cycle Read Timing
Single Cycle Write Timing
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