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Datasheet: JAN1N276 (Microsemi Corporation)

Germanium Diodes

 

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Microsemi Corporation
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
Absolute Maximum Ratings at T
amb
= 25
O
C Unless Otherwise Specified
Parameter
Symbols
Min.
Max.
Units
Peak Inverse Voltage
PIV
**
70
Volts
Surge Current,t = 1 Second
I
S
0.4
Amps
Peak Operating Current
I
FSR
270
mA
Operating and Storage Temperatures
T
J & STG
-60
+90
O
C
Electrical Characteristics at T
amb
= 25
O
C
Parameter
Test Conditions
Symbols
Min.
Typ.
Max.
Units
Forward Voltage Drop
I
F
= 40 mA
V
F
**
1.0
Volts
Breakdown Voltage
I
R
= 1.0 mA
PIV
**
75
Volts
Reverse Leakage
V
R
= 10 Volts
I
R
**
5.0
ľA
Reverse Leakage
V
R
= 10 Volts,T
amb
= 75
O
C
I
R
**
100
ľA
Junction Capacitance
f = 1MHz, V
R
= 0 volt
C
J
0.8
pF
Reverse Recovery Time
trr (If = 5 mA. Irr (rec.)@0.5 mA,Vr= -40 Volts) trr
--
***
300
nSec
ForwardRecovery Voltage If = 50 mA PeakSine wave 100 KHz
Vfr
--
***
3.0 Volts
Features
Lower leakage current
Flat junction capacitance
High mechanical strength
At least 1 million hours MTBF
BKC's Sigma-BondTM plating for
problem free solderability
Applications
AM/FM detectors
Ratio detectors
FM discriminators
TV audio detectors
RF input probes
TV video detectors
Gold Bonded
1N276 Germanium Diodes
Optimized for Radio Frequency Response
Can be used in many AM, FM and TV-IF applications, replacing point contact devices.
1.0"
25.4 mm
(Min.)
DO-7 Glass Package

Dia
0.085-.107 "
2.16-2.71 mm
0.018-0.022"
0.458-.558 mm
Length
0.230-0.30"
5.85-7.62mm
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