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Datasheet: 61083 (Micropac Industries)

Surface Mount (pnp) General Purpose Transistor

 

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Micropac Industries
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
8 - 2
61083
SURFACE MOUNT (PNP)
GENERAL PURPOSE TRANSISTOR
(2N2907AUA)
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
Hermetically
sealed
Miniature package to minimize circuit board area
Ceramic surface mount package
MIL-PRF-19500 screening available
Applications:
Analog
Switches
Signal
Conditioning
Small Signal Amplifiers
High
Density
Packaging
DESCRIPTION
The 61083 is a hermetically sealed ceramic surface mount general purpose switching transistor. This miniature ceramic
package is ideal for designs where board space and device weight are important requirements. This device is available
custom binned to customer specifications or screened to MIL-PRF-19500.
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage ...............................................................................................................................................................60V
Collector-Emitter Voltage............................................................................................................................................................60V
Emitter-Collector Voltage..............................................................................................................................................................5V
Continuous Collector Current ............................................................................................................................................... 600mA
Power Dissipation (Derate at the rate of 2.28 mW/C above 25C) .................................................................................. 400mW
Maximum Junction Temperature............................................................................................................................................200C
Operating Temperature (See part selection guide for actual operating temperature) ......................................... -65C to +200C
Storage Temperature............................................................................................................................................. -65C to +200C
Lead Soldering Temperature (vapor phase reflow for 30 seconds) .....................................................................................215C
Package Dimensions Schematic Diagram
IDENTIFIER
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
0.022 [0.56]
1
4
0.045 [1.14]
0.072 [1.83]
2
3
0.032 [0.81]
3 PL
PIN 1
0.215 [5.46]
0.155 [1.40]
0.145 [3.68]
0.075 [1.91]
0.061 [1.55]
3
E
C
1
B
2
0.225 [5.72]
0.028 [0.17]
0.088 [2.24]
0.055 [1.40]
0.048 [1.22]
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
8 - 3
61083
SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR (TYPE 2N2907AUA)
ELECTRICAL CHARACTERISTICS
T
A
= 25
C unless otherwise specified.
PARAMETER
SYMBOL
MIN
MAX
UNITS
TEST CONDITIONS
NOTE
Collector-Base Breakdown Voltage
BV
CBO
60
V
I
C
= 10
A, I
E
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
60
V
I
C
= 10mA, I
B
= 0
A
Emitter-Base Breakdown Voltage
BV
EBO
5
V
I
C
= 0, I
E
= 10
A
Collector-Base Cutoff Current
I
CBO
10
nA
V
CB
= 50V, I
E
= 0
10
A
V
CB
= 50V, I
E
= 0, T
A
= 150
C
Collector-Emitter Cutoff Current
I
CES
50
nA
V
CE
= 30V
Emitter-Base Cutoff Current
I
EBO
50
nA
V
EB
= 3.5V, I
C
= 0
h
fe1
75
-
V
CE
= 10V, I
C
= 0.1mA
h
fe2
100
450
-
V
CE
= 10V, I
C
= 1mA
Forward-Current Transfer Ratio
h
fe3
100
-
V
CE
= 10V, I
C
= 10mA
h
fe4
100
300
-
V
CE
= 10V, I
C
= 150mA
1
h
fe5
50
-
V
CE
= 10V, I
C
= 500mA
1
h
fe6
50
-
V
CE
= 10V, I
C
= 1mA @ -55
C
Collector-Emitter Saturation Voltage
V
CE (SAT)
0.40
V
I
C
= 150mA, I
B
= 15mA
1
1.60
V
I
C
= 500mA, I
B
= 50mA
1
Base-Emitter Saturation Voltage
V
BE (SAT)
1.30
V
I
C
= 150mA, I
B
= 15mA
1
2.60
V
I
C
= 500mA, I
E
= 50mA
1
SMALL-SIGNAL CHARACTERISTICS
Small Signal Forward Current Transfer Ratio
h
fe
100
-
V
CE
= 10V, I
C
= 1mA, f = 1kHz
Small Signal Forward Current Transfer Ratio
h
fe
2
-
V
CE
= 20V, I
C
=50mA,
f = 100kHz
Open Circuit Output Capacitance
C
OBO
8
Pf
V
CB
= 10V, 100kHz,
<
f
<
1 MHz
Input Capacitance (Output Open Capacitance)
C
IBO
30
Pf
V
EB
= 2 V, 100kHz,
<
f
<
1 MHz
Turn-On Time
t
on
45
Ns
V
CC
= 30V, I
C
= 150mA,
I
B1
= 15mA
Turn-Off Time
t
off
300
ns
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
NOTES:
1.
Pulse width
<
300
s, duty cycle
<
2.0%.
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
SYMBOL
MIN
MAX
UNITS
Bias Voltage-Collector/Emitter
I
C
10
150
mA
Collector-Emitter Voltage
V
CE
5
20
V
SELECTION GUIDE
PART NUMBER
PART DESCRIPTION
61083-001
2N2907AUA, PNP transistor, commercial version
61083-002
2N2907AUA, PNP transistor, JAN level screening
61083-101
2N2907AUA, PNP transistor, JANTX level screening
61083-102
2N2907AUA, PNP transistor, JANTXV level screening
61083-300
2N2907AUA, PNP transistor, JANS level screening
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