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Datasheet: L2SD1781KQLT1G (Leshan Radio Company)

Medium Power Transistor(32V, 0.8A)

 

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Leshan Radio Company
LRC
LESHAN RADIO COMPANY,LTD.
Medium Power Transistor
(32V, 0.8A)
L
2SD1781K
*LT1
F
Features
1) Very low V
CE(sat)
.
V
CE(sat)
t
0.4 V (Typ.)
(I
C
/ I
B
= 500mA / 50mA)
2) High current capacity in compact
package.
3) Complements the
L
2SB1197K
*LT1
F
Structure
Epitaxial planar type
NPN silicon transistor
F
Absolute maximum ratings (Ta = 25
_
C)
L2SD1781K*LT1
SOT-23 /TO-236AB
1
3
2
1
BASE
COLLECTOR
3
2
EMITTER
L2SD1781K*LT1-1/4
4) Pb Free Package is Available.
Device
Marking
Shipping
L2SD1781KQLT1
L2SD1781KQLT1
G
L2SD1781KRLT1
L2SD1781KRLT1
G
AFQ
AFQ(Pb-Free)
AFR
AFR(Pb-Free)
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
ORDERING INFORMATION
LRC
LESHAN RADIO COMPANY,LTD.
L2SD1781K*LT1
F
Electrical characteristics (Ta = 25
_
C)
Electrical characteristic curves
DEVICE MARKING
ltem
Q
R
h
FE
120~270
180~390
L2SD1781KQLT1=AFQ L2S1781KRLT1=AFR
L2SD1781K*LT1-2/4
LRC
LESHAN RADIO COMPANY,LTD.
L2
SD1781K
*LT1
L2SD1781K*LT1-3/4
LRC
LESHAN RADIO COMPANY,LTD.
D
J
K
L
A
C
B S
H
G
V
1
2
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.1102
0.1197
2.80
3.04
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.031
0.8
SOT-23
3
L2SD1781K*LT1
L2SD1781K*LT1-4/4
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