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Datasheet: L2SC4617QT1 (Leshan Radio Company)

General Purpose Transistors NPN Silicon

 

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Leshan Radio Company

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LESHAN RADIO COMPANY, LTD.
1
BASE
COLLECTOR
3
General Purpose Transistors
NPN Silicon
2
EMITTER


L2SC4617*T1
1
3
2
!
!
!
!
Absolute maximum ratings (Ta=25
C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
60 V
V
V
A
C
C
50
7
0.15
W
0.15
150
-
55~
+
150
Symbol
Limits
Unit
!
!
!
!
Electrical characteristics (Ta=25
C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
60
50
7
-
-
120
-
-
-
-
-
-
-
-
-
-
180
2.0
-
-
-
0.1
0.1
560
0.5
-
3.5
V
I
C
=
50
A
I
C
=
1
A
I
E
=
50
A
V
CB
=
60V
V
EB
=
7
V
V
CE
=
6V, I
C
=
1mA
I
C
/I
B
=
50mA/5mA
V
CE
=
12V, I
E
=
2mA, f
=
30MHz
V
CB
=
12V, I
E
=
0A, f
=
1MHz
V
V
A
A
-
V
MHz
pF
Typ.
Max.
Unit
Conditions
SC-89
h
FE
values are classified as follows:
Item
Q
R
S
h
FE
120~270
180~390
270~560
!
!
!
!
Device marking
!
!
!
!
L2SC4617QT1=BQ L2SC4617RT1=BR L2SC4617ST1=BS
L2SC4617*T1
-1/4
LESHAN RADIO COMPANY, LTD.
L2SC4617*T1
L2SC4617*T1
-2/4
!
!
!
!
Electrical characterristic curves
Fig.1 Grounded emitter propagation
characteristics
0
0.1
0.2
0.5
2
20
50
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
5
10
Ta
=
100
C
V
CE
=6V
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
25
C
-
55
C
Fig.2 Grounded emitter output
characteristics (
)
0
20
40
60
80
100
0.4
0.8
1.2
1.6
2.0
0
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0.05mA
0.10mA
0.15mA
0.25mA
0.30mA
0.35mA
0.20mA
Ta=25
C
I
B
=0A
0.40mA
0.50mA
0.45mA
0
0
2
8
10
4
8
12
16
4
6
20
I
B
=0A
Ta=25
C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
3
A
6
A
9
A
12
A
15
A
18
A
21
A
24
A
27
A
30
A
Fig.3 Grounded emitter output
characteristics (
)
0.2
20
10
0.5 1
2
5
10 20
50 100 200
50
100
200
500
V
CE
=5V
3V
1V
Ta=25
C
Fig.4 DC current gain vs.
collector current (
)
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
0.2
0.5
1
2
5
10 20
50 100 200
20
10
50
100
200
500
25
C
-
55
C
Ta=100
C
V
CE
=
5V
Fig.5 DC current gain vs.
collector current (
)
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
0.2
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5
1
2
5
10
20
50 100 200
I
C
/I
B
=50
20
10
Ta=25
C
Fig.7 Collector-emitter saturation
voltage vs. collector current (
)
0.2
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5
1
2
5
10
20
50 100 200
I
C
/I
B
=10
Ta=100
C
25
C
-
55
C
Fig.8 Collector-emitter saturation
voltage vs. collector current (
)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1
2
5
10
20
50 100
I
C
/I
B
=50
Ta=100
C
25
C
-
55
C
Fig.9 Gain bandwidth product vs.
emitter current
50
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
-
100
100
200
500
Ta=25
C
V
CE
=6V
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.10 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE


: Cib (
pF)
0.2
0.5
1
2
5
10
20
50
1
2
5
10
20
Cob
Ta=25
C
f
=1MHz
I
E
=0A
I
C
=0A
Cib
Fig.11 Base-collector time constant
vs. emitter current
-
0.2
-
0.5
-
1
-
2
-
5
-
10
BASE COLLECTOR TIME CONSTANT : Ccr
bb'
(ps)
EMITTER CURRENT : I
E
(mA)
10
20
50
100
200
Ta=25
C
f=32MH
Z
V
CB
=6V
LESHAN RADIO COMPANY, LTD.
L2SC4617*T1
L2SC4617*T1
-3/4
G
M
0.08 (0.003)
X
D
3 PL
J
-X-
-Y-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.
A
B
Y
1
2
3
N
2 PL
K
C
-T-
SEATING
PLANE
DIM
A
MIN
NOM
MIN
NOM
INCHES
1.50
1.60
1.70
0.059
MILLIMETERS
B
0.75
0.85
0.95
0.030
C
0.60
0.70
0.80
0.024
D
0.23
0.28
0.33
0.009
G
0.50 BSC
H
0.53 REF
J
0.10
0.15
0.20
0.004
K
0.30
0.40
0.50
0.012
L
1.10 REF
M
---
---
10
---
N
---
---
10
---
S
1.50
1.60
1.70
0.059
0.063
0.067
0.034
0.040
0.028
0.031
0.011
0.013
0.020 BSC
0.021 REF
0.006
0.008
0.016
0.020
0.043 REF
---
10
---
10
0.063
0.067
MAX
MAX
_
_
_
_
M
H
H
L
G
RECOMMENDED PATTERN
OF SOLDER PADS
S
LESHAN RADIO COMPANY, LTD.
L2SC4617*T1
SC-8
9
L2SC4617*T1
-4/4
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