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Datasheet: L2SC4226T1 (Leshan Radio Company)

High-frequency Amplifier Transistor

 

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Leshan Radio Company
The information in this document is subject to change without notice.
1993
DESCRIPTION
The L2SC4226T1 is a low supply voltage transistor designed for VHF, UHF low
noise amplifier.
It is suitable for a high density surface mount assembly since the transistor
has been applied small mini mold package.
FEATURES
Low Noise
NF = 1.2 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
High Gain
|S
21e
|
2
= 9.0 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
Small Mini Mold Package
EIAJ: SC-70
L2SC4226T1
2
1
3
SC-70/SOT-323
Driver Marking
L2SC4226
T1=
R2
LESHAN RADIO COMPANY, LTD.
L2SC4226T1-1/5
L2SC4226T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
150
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
40
110
250
V
CE
= 3 V, I
C
= 7 mA*
1
Gain Bandwidth Product
f
T
3.0
4.5
GHz
V
CE
= 3 V, I
C
= 7 mA
Feed back Capacitance
C
re
0.7
1.5
pF
V
CE
= 3 V, I
E
= 0, f = 1 MHz*
2
Insertion Power Gain
|S
21e
|
2
7
9
dB
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Noise Figure
NF
1.2
2.5
dB
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
*1
Pulse Measurement ; PW
350
s, Duty Cycle
2 % Pulsed.
*2
Measured with 3 terminals bridge, Emitter and Case should be grounded.
LESHAN RADIO COMPANY, LTD.
L2SC4226T1-2/5
TYPICAL CHARACTERISTICS (T
A
= 25 C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
T
A
Ambient Temperature C
P
T
Total Power Dissipation mW
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
Base to Emitter Voltage V
I
C
Collector Current mA
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
Collector to Emitter Voltage V
I
C
Collector Current mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
C
Collector Current mA
h
FE
DC Current Gain
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
I
C
Collector Current mA
f
T
Gain Bandwidth Product GHz
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
I
C
Collector Current mA
|S
21e
|
2
Insertion Power Gain dB
V
CE
= 3 V
f = 1.0 GHz
200
100
20
10
0
0.5
1.0
V
CE
= 3 V
25
20
15
10
5
0
5
10
V
CE
= 3 V
f = 1.0 GHz
200
100
50
20
10
0.5
1
5
10
50
V
CE
= 3 V
I
B
=
160
A
Free Air
0
50
100
150
140
A
120
A
100
A
80
A
60
A
40
A
20
A
20
10
5
2
1
0.5
1
5
10
50
15
10
5
0
0.5
1
5
10
50
100
L2SC4226T1-3/5
LESHAN RADIO COMPANY, LTD.
L2SC4226T1
NOISE FIGURE vs.
COLLECTOR CURRENT
I
C
Collector Current mA
NF Noise Figure dB
INSERTION POWER GAIN vs. FREQUENCY
f Frequency GHz
|S
21e
|
2
Insertion Power Gain dB
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
V
CB
Collector to Base Voltage V
C
re
Feed-back Capacitance pF
6
4
2
0
0.5
1
5
10
50
100
V
CE
= 3 V
f = 1 GHz
24
20
16
12
8
4
0
0.1
0.2
0.5
1.0
2.0
5.0
V
CE
= 3 V
I
C
= 7 mA
1
2
5
10
20
50
f = 1 MHz
5.0
1.0
0.5
0.2
0.1
2.0
L2SC4226T1-4/5
LESHAN RADIO COMPANY, LTD.
L2SC4226T1
0.7
1.9
0.028
0.65
0.025
0.65
0.025
inches
mm
0.075
0.035
0.9
PIN
1. BASE
2. EMITTER
3. COLLECTOR
NOTES:
1.
DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
MILLIMETERS
INCHES
A
0.071
0.087
1.80
2.20
K
0.017 REF
0.425 REF
L
0.026 BSC
0.650 BSC
N
0.028 REF
0.700 REF
S
0.0
79
0.0
95
2.00
2.40
B
0.045
0.053
1.15
1.35
C
0.03
2
0.04
0
0.
8
0
1.
00
D
0.012
0.016
0.30
0.40
G
0.047
0.055
1.20
1.40
H
0.000
0.004
0.00
0.10
J
0.004
0.010
0.10
0.25
C
N
A
L
D
G
S
B
H
J
K
3
1
2
0.05 (0.002)
SC-70 / SOT-323
LESHAN RADIO COMPANY, LTD.
L2SC4226T1
L2SC4226T1-5/5
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