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Datasheet: L2SC3838QT1 (Leshan Radio Company)

High-frequency Amplifier Npn Transistor

 

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Leshan Radio Company
LESHAN RADIO COMPANY, LTD.
1
3
2
SC-59
L2SC3838QT1
L2SC3838QT1-1/2
Absolute maximum ratings (Ta=25
o
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
T
stg
Limits
2
0
1
1
3
50
0.2
150
- 55~+150
Unit
V
V
V
mA
W
o
C
o
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25
o
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
f
T
Cob
rbb'Cc
NF
2
0
1
1
3
120
1.4 3.2
0.
8
0.5
0.5
270
1.5
V
V
V
uA
u
A
G
Hz
pF
I
C
= 10A
I
C
= 1mA
I
E
= 10A
V
CB
= 10
V,I
E
=0
V
EB
= 2
V,I
C
=0
V
CE(sat)
0.5
V
I
C
/I
B
=
1
0mA/
5
mA
V
CE
/I
C
= 10V/
5
mA
V
CB
= 10V , I
C
= 10mA , f =
5
00MHz
V
CB
= 10V , I
E
= 0A , f = 1MHz
V
CB
= 10V , I
C
= 10mA , f = 31.8MHz
V
CE
=
6
V , I
C
= 2mA , f =
5
00MHz , Rg
= 50
3
.5
dB
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
Collector-emitter saturation voltage
Collector-base time constant
Noise factor
Device Marking
L2SC3838QT1=R25
j
ps
4
12
High-Frequency Amplifier
NPN Transistor
L
3838QT1
3.2
2
EMITTER
3
COLLECTOR
1
BASE
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
LESHAN RADIO COMPANY, LTD.
L2SC3838QT1-2/2
SC-59
L2SC3838QT1
K
J
H
C
MIN
MAX
MIN
MAX
A
B
C
D
G
H
J
K
L
S
2.70
1.3
1.00
0.35
1.70
0.0130
0.1
0.20
1.25
2.50
3.10
1.70
1.30
0.50
2.10
0.100
0.26
0.60
1.65
3.00
0.1063
0.0512
0.0394
0.0138
0.0670
0.0005
0.0040
0.0079
0.0493
0.0985
0.1220
0.0669
0.0511
0.0196
0.0826
0.00040
0.0102
0.0236
0.0649
0.1181
DIN
MILLIMETERS
INCHES
A
L
B
G
D
1
2
3
S
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