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Datasheet: L2SC3356LT1 (Leshan Radio Company)

High-frequency Amplifier Transistor

 

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Leshan Radio Company
DATA SHEET
DESCRIPTION
The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
FEATURES
Low Noise and High Gain
NF = 1.1 dB TYP., G
a
= 11 dB TYP. @V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
High Power Gain
MAG = 13 dB TYP. @V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25

C)
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
200
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25

C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1.0 V, I
C
= 0
DC Current Gain
h
F
E
82 170 270 V
CE
= 10 V, I
C
= 20 mA
Gain Bandwidth Product
f
T
7
GHz
V
CE
= 10 V, I
C
= 20 mA
Feed-Back Capacitance
C
re
**
0.55
1.0
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21
e
2
11.5
dB
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.1
2.0
dB
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
*
Pulse Measurement PW
350
s, Duty Cycle
2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
LESHAN RADIO COMPANY, LTD.
Driver Marking
L2SC3356LT1=R24
L2SC3356LT1
1
2
3
S
OT-23
L2SC3356LT1
-1/4
TYPICAL CHARACTERISTICS (T
A
= 25

C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0
10
20
50
100
200
50
1
5
10
50
0.5
100
150
T
A
-Ambient Temperature-
C
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
-Total Power Dissipation-mW
h
FE
-DC Current Gain
V
CE
= 10 V
0
5
10
15
0.5
1
5
10
50 70
I
C
-Collector Current-mA
INSERTION GAIN vs.
COLLECTOR CURRENT
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 10 V
f = 1.0 GHz
0.3
0.5
1
2
0
0.5
1
2
5
10
20
30
V
CB
-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
re
-Feed-back Capacitance-pF
f = 1.0 MHz
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0
0.5 1.0
10
5.0
30
I
C
-Collector Current-mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
f
T
-Gain Bandwidth Product-MHz
V
CE
= 10 V
0
10
20
0.1
0.2
0.4
0.6 0.81.0
2
f-Frequency-GHz
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
G
max
-Maximum Gain-dB
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 10 V
I
C
= 20 mA
G
max
|S
21e
|
2
Free Air
LESHAN RADIO COMPANY, LTD.
L2SC3356LT1
-2/4
0
2
1
5
4
3
7
6
0.5
1
5
10
50 70
I
C
-Collector Current-mA
NOISE FIGURE vs.
COLLECTOR CURRENT
NF-Noise Figure-dB
V
CE
= 10 V
f = 1.0 GHz
5
4
3
2
1
0
18
15
12
6
3
0
2
4
6
8
10
V
CE
-Collector to Emitter Voltage-V
NOISE FIGURE, FORWARD INSERTION
GAIN vs. COLLECTOR TO EMITTER VOLTAGE
NF-Noise Figure-dB
|S
21e
|
2
-Insertion Gain-dB
f = 1.0 GHz
I
C
= 20 mA
|S
21e
|
2
NF
LESHAN RADIO COMPANY, LTD.
L2SC3356LT1
-3/4
LESHAN RADIO COMPANY, LTD.
D
J
K
L
A
C
B S
H
G
V
1
2
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.1102
0.1197
2.80
3.04
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.03
1
0.
8
SOT-23
3
L2SC3356LT1-4/4
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