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Datasheet: L2SC2412KSLT1G (Leshan Radio Company)

General Purpose Transistors NPN Silicon

 

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Leshan Radio Company
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
1
3
2
L2SC2412K*LT1
SOT­ 23
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector­Emitter Voltage
V
CEO
50
V
Collector­Base Voltage
V
CBO
60
V
Emitter­Base Voltage
V
EBO
7.0
V
Collector Current -- Continuous
I
C
150
mAdc
Collector power dissipation
P
C
0.2
W
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-55 ~+150
°C
DEVICE MARKING
L2SC2412KQLT1 =BQ L2SC2412KRLT1 =BR L2SC2412KSLT1 =G1F
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector­Emitter Breakdown Voltage
V
(BR)CEO
50
--
--
V
(I
C
= 1 mA)
Emitter­Base Breakdown Voltage
V
(BR)EBO
7
--
--
V
(I
E
= 50
µ
A)
Collector­Base Breakdown Voltage
V
(BR)CBO
60
--
--
V
(I
C
= 50
µ
A)
Collector Cutoff Current
I
CBO
--
--
0.1
µ
A
(V
CB
= 60 V)
Emitter cutoff current
I
EBO
--
--
0.1
µ
A
(V
EB
= 7 V)
Collector-emitter saturation voltage
V
CE(sat)
--
--
0.4
V
(I
C
/ I
B
= 50 mA / 5m A)
DC current transfer ratio
h
FE
120
­­
560
­­
(V
CE
= 6 V, I
C
= 1mA)
Transition frequency
f
T
--
180
­­
MHz
(V
CE
= 12 V, I
E
= ­ 2mA, f =30MHz )
Output capacitance
C
ob
--
2.0
3.5
pF
(V
CB
= 12 V, I
E
= 0A, f =1MHz )
h
FE
values are classified as follows:
Q
R
S
hFE
120~270
180~390
270~560
2
EMITTER
3
COLLECTOR
1
BASE
*
L2SC2412K*LT1-
1
/
3
·
Pb-Free Package is Available.
Device
Marking
Shipping
L2SC2412KQLT1
L2SC2412KRLT1
L2SC2412KSLT1
L2SC2412KQLT1G
L2SC2412KRLT1G
L2SC2412KSLT1G
BQ
BR
G1F
BQ(Pb-Free)
BR(Pb-Free)
G1F(Pb-Free)
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
ORDERING INFORMATION
LESHAN RADIO COMPANY, LTD.
L2SC2412K*LT1
0
­0.2
­0.4
­0.6
­0.8
­1.0
­1.2
­1.4
­1.6
T
A
= 100°C
25°C
­ 55°C
50
20
10
50
2
1
0.5
0.2
0.1
0
0.4
0.8
1.2
1.6
2.0
T
A
= 25°C
100
80
60
40
20
0
I
C
, COLLECT
OR CURRENT

(mA)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics( )
Fig.3 Grounded emitter output characteristics( )
Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current ( )
Fig.6 Collector-emitter saturation voltage vs.
collector current
V
CE
= 6 V
V
BE
, BASE TO EMITTER VOLTAGE(V)
I
C
, COLLECT
OR CURRENT

(mA)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
4
8
12
16
20
10
8
6
4
2
0
I
C
, COLLECT
OR CURRENT

(mA)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
500
200
100
50
20
10
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (mA)
0.2
0.5
1
2
5
10
20
50
100
200
500
200
100
50
20
10
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (mA)
0.5
0.2
0.1
0.05
0.02
0.01
V
CE(sat)
, COLLECT
OR SA
TURA
TION VOL
T
AGE(V)
I
C
, COLLECTOR CURRENT (mA)
0.50mA
0.2
0.5
1
2
5
10
20
50
100
200
0.2
0.5
1
2
5
10
20
50
100
200
L2SC2412K*LT1-2/
3
LESHAN RADIO COMPANY, LTD.
Fig.8 Collector-emitter saturation voltage vs.
collector current ( )
V
CE(sat)
, COLLECT
OR SA
TURA
TION VOL
T
AGE(V)
I
C
, COLLECTOR CURRENT (mA)
0.2
0.5
1
2
5
10
20
50
100
L2S2412K*LT1
Fig.9 Gain bandwidth product vs. emitter current
500
200
100
50
f
r
, TRANSITION FREQUENCY(MHz)
I
E
, EMITTER CURRENT (mA)
­0.5
­1
­2
­5
­10
­20
­50
­100
Fig.10 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
20
10
5
2
1
C
ob
, COLLECT
OR OUTPUT
CAP
ACIT
ANCE( pF)
C
ib
, EMITTER INPUT
CAP
ACIT
ANCE (pF)
V
CB
, COLLECTOR TO BASE VOLTAGE (V)
V
EB
, EMITTER TO BASE VOLTAGE (V)
0.2
0.5
1
2
5
10
20
50
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
0.5
0.2
0.1
0.05
0.02
0.01
V
CE(sat)
, COLLECT
OR SA
TURA
TION VOL
T
AGE(V)
I
C
, COLLECTOR CURRENT (mA)
0.2
0.5
1
2
5
10
20
50
100
200
0.5
0.2
0.1
0.05
0.02
0.01
Fig.11 Base-collector time constant vs.emitter current
200
100
50
20
10
C
c
-
r
bb
, BASE COLLECT
OR
TIME CONST
ANT( ps)
I
E
, EMITTER CURRENT (mA)
­0.2
­0.5
­1
­2
­5
­10
L2SC2412K*LT1-3/
3
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