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Datasheet: L2SA1037AKLT1 (Leshan Radio Company)

General Purpose Transistors

 

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Leshan Radio Company
LM35­1/3
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector­Emitter Voltage V
CEO
­50 V
Collector­Base Voltage V
CBO
­60 V
Emitter­Base Voltage V
EBO
­6.0 V
Collector Current -- Continuous I
C
­150 mAdc
Collector power dissipation P
C
0.2 W
Junction temperature T
j
150 °C
Storage temperature T
stg
-55 ~+150 °C
DEVICE MARKING
L2SA1037AKQLT1 =FQ L2SA1037AKSLT1 =G3F L2SA1037AKRLT1 =FR
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Collector­Emitter Breakdown Voltage
V
(BR)CEO
­ 50 -- -- V
(I
C
= ­1 mA)
Emitter­Base Breakdown Voltage
V
(BR)EBO
­ 6 -- -- V
(I
E
= ­ 50
µ
A)
Collector­Base Breakdown Voltage
V
(BR)CBO
­ 60 -- -- V
(I
C
= ­ 50
µ
A)
Collector Cutoff Current
I
CBO
-- --
­ 0.1
µ
A
(V
CB
= ­ 60 V)
Emitter cutoff current
I
EBO
-- -- ­ 0.1
µ
A
(V
EB
= ­ 6 V)
Collector-emitter saturation voltage
V
CE(sat)
-- -- -0.5 V
(I
C
/ I
B
= ­ 50 mA / ­ 5m A)
DC current transfer ratio h
FE
120 ­­ 560 ­­
(V
CE
= ­ 6 V, I
C
= ­1mA)
Transition frequency
f
T
-- 140 ­­ MHz
(V
CE
= ­ 12 V, I
E
= 2mA, f=30MHz )
Output capacitance
C
ob
-- 4.0 5.0 pF
(V
CB
= ­ 12 V, I
E
= 0A, f =1MHz )
h
FE
values are classified as follows:
Q
R
S
hFE 120~270 180~390 270~560
1
3
2
SOT­ 23
2
EMITTER
3
COLLECTOR
1
BASE
*
L2SA1037AK*LT1
LM35­2/3
LESHAN RADIO COMPANY, LTD.
L2SA1037AK*LT1
­0.2
­0.4
­0.6
­0.8
­1.0
­1.2
­1.4
­1.6
T
A
= 100°C
25°C
­ 40°C
­50
­20
­10
­50
­2
­1
­0.5
­0.2
­0.1
0
­0.4
­0.8
­1.2
­1.6
­2.0
T
A
= 25°C
­10
­8
­6
­4
­2
0
I
C
, COLLECT
OR CURRENT
(mA)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics( )
Fig.3 Grounded emitter output characteristics( )
Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current ( )
Fig.6 Collector-emitter saturation voltage vs.
collector current ( )
V
CE
= ­10 V
V
BE
,
BASE TO EMITTER VOLTAGE(V)
I
C
, COLLECT
OR CURRENT
(mA)
V
CE
,
COLLECTOR TO EMITTER VOLTAGE (V)
­35.0
­31.5
­28.0
­24.5
­21.0
­17.5
­14.0
­10.5
­7.0
­3.5
µ
A
I
B
=0
0
­1
­2
­3
­4
­5
T
A
= 25°C
­100
­80
­60
­40
­20
0
I
C
, COLLECT
OR CURRENT
(mA)
V
CE
,
COLLECTOR TO EMITTER VOLTAGE (V)
­250
­200
­150
500
450
400
350
300
­100
­50
µ
A
I
B
=0
T
A
= 25°C
500
200
100
50
h
FE
, DC CURRENT GAIN
V
CE
= ­5 V
­3V
­1V
I
C
, COLLECTOR CURRENT
(mA)
­0.2
­0.5
­1
­2
­5
­10
­20
­50
­100
T
A
= 100°C
500
200
100
50
h
FE
, DC CURRENT GAIN
V
CE
= ­ 6V
I
C
, COLLECTOR CURRENT
(mA)
­0.2
­0.5
­1
­2
­5
­10
­20
­50
­100
25°C
­40°C
­1
­0.5
­0.2
­0.1
­0.05
V
CE(sat)
, COLLECT
OR SA
TURA
TION VOL
T
AGE(V)
I
C
, COLLECTOR CURRENT
(mA)
­0.2
­0.5
­1
­2
­5
­10
­20
­50
­100
T
A
= 25°C
I
C
/I
B
= 50
20
10
LM35­3/3
LESHAN RADIO COMPANY, LTD.
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
­1
­0.5
­0.2
­0.1
­0.05
V
CE(sat
)
, COLLEC
T
OR S
A
TUR
A
TION VO
L
T
AGE(V)
I
C
, COLLECTOR CURRENT
(mA)
­0.2 ­0.5 ­1 ­2 ­5 ­10 ­20 ­50 ­100
T
A
= 100°C
25°C
­40°C
I
C
/I
B
= 10
L2SA1037AK*LT1
Fig.8 Gain bandwidth product vs. emitter current
1000
500
200
100
50
f
r
, TRANSITION FREQUENCY(MHz)
I
E
, EMITTER CURRENT
(mA)
­0.2
­0.5
­1
­2
­5
­10
­20
­50
­100
T
A
= 25°C
V
CE
= ­12V
Fig.9 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
20
10
5
2
C
ob
, COLLECT
OR OUTPUT
C
A
P
ACIT
ANCE( pF)
C
ib
, EMITTER INPUT
CAP
ACIT
ANCE (pF)
V
CB
, COLLECTOR TO BASE VOLTAGE (V)
V
EB
, EMITTER TO BASE VOLTAGE (V)
­0.5
­1
­2
­5
­10
­20
T
A
= 25°C
f =1MHz
I
E
= 0A
I
C
= 0A
C
ib
C
ob
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