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Datasheet: L2N7002LT1G (Leshan Radio Company)

Small Signal Mosfet 115 Mamps, 60 Volts

 

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Leshan Radio Company
L2N7002LT1­1/3
LESHAN RADIO COMPANY, LTD.
1
3
2
L2N7002LT1
CASE 318, STYLE 21
SOT­ 23 (TO­236AB)
115 mAMPS
60 VOLTS
R
DS(on)
= 7.5
W
1
2
3
N - Channel
Device
Marking
Shipping
ORDERING INFORMATION
L2N7002LT1 702
3000 Tape & Reel
W
702
702
= Device Code
W
= Work Week
MARKING DIAGRAM
& PIN ASSIGNMENT
3
2
1
Drain
Gate
Source
L2N7002LT1G 702
(Pb-Free)
3000 Tape & Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain­Source Voltage
V
DSS
60
V
dc
Drain­Gate Voltage (R
GS
= 1.0 M
)
V
DGR
60
V
dc
Drain Current
­ Continuous T
C
= 25
°
C (Note 1.)
­ Continuous
T
C
= 100
°
C (Note 1.)
­ Pulsed (Note 2.)
I
D
I
D
I
DM
±
115
±
75
±
800
mAdc
Gate­Source Voltage
­ Continuous
­ Non­repetitive (tp
50
µ
s)
V
GS
V
GSM
±
20
±
40
Vdc
Vpk
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR­5 Board
(Note 3.) T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
R
JA
556
°
C/W
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
R
JA
417
°
C/W
Junction and Storage Temperature
T
J,
T
stg
­55 to
+150
°
C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
300
µ
s, Duty Cycle
2.0%.
3. FR­5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Small Signal MOSFET
115 mAmps, 60 Volts
N­Channel SOT­23
·
Pb-Free Package is Available.
LESHAN RADIO COMPANY, LTD.
L2N7002LT1­2/3
L2N7002LT1
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain­Source Breakdown Voltage
(V
GS
= 0, I
D
= 10
µ
Adc)
V
(BR)DSS
60
­
­
Vdc
Zero Gate Voltage Drain Current
T
J
= 25
°
C
(V
GS
= 0, V
DS
= 60 Vdc)
T
J
= 125
°
C
I
DSS
­
­
­
­
1.0
500
µ
Adc
Gate­Body Leakage Current, Forward
(V
GS
= 20 Vdc)
I
GSSF
­
­
100
nAdc
Gate­Body Leakage Current, Reverse
(V
GS
= ­20 Vdc)
I
GSSR
­
­
­100
nAdc
ON CHARACTERISTICS
(Note 2.)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
µ
Adc)
V
GS(th)
1.0
1.6
2.5
Vdc
On­State Drain Current
(V
DS
2.0 V
DS(on)
, V
GS
= 10 Vdc)
I
D(on)
500
­
­
mA
Static Drain­Source On­State Voltage
(V
GS
= 10 Vdc, I
D
= 500 mAdc)
(V
GS
= 5.0 Vdc, I
D
= 50 mAdc)
V
DS(on)
­
­
­
­
3.75
0.375
Vdc
Static Drain­Source On­State Resistance
(V
GS
= 10 V, I
D
= 500 mAdc)
T
C
= 25
°
C
T
C
= 125
°
C
(V
GS
= 5.0 Vdc, I
D
= 50 mAdc) T
C
= 25
°
C
T
C
= 125
°
C
r
DS(on)
­
­
­
­
1.4
­
1.8
­
7.5
13.5
7.5
13.5
Ohms
Forward Transconductance
(V
DS
2.0 V
DS(on)
, I
D
= 200 mAdc)
g
FS
80
­
­
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
­
17
50
pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
oss
­
10
25
pF
Reverse Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
­
2.5
5.0
pF
SWITCHING CHARACTERISTICS
(Note 2.)
Turn­On Delay Time
(V
DD
= 25 Vdc , I
D
^
500 mAdc,
t
d(on)
­
7
20
ns
Turn­Off Delay Time
(V
R
G
= 25
, R
L
= 50
, V
gen
= 10 V)
t
d(off)
­
11
40
ns
BODY­DRAIN DIODE RATINGS
Diode Forward On­Voltage
(I
S
= 11.5 mAdc, V
GS
= 0 V)
V
SD
­
­
­1.5
Vdc
Source Current Continuous
(Body Diode)
I
S
­
­
­115
mAdc
Source Current Pulsed
I
SM
­
­
­800
mAdc
2. Pulse Test: Pulse Width
300
µ
s, Duty Cycle
2.0%.
LESHAN RADIO COMPANY, LTD.
L2N7002LT1­3/3
TYPICAL ELECTRICAL CHARACTERISTICS
I
D
, DRAIN CURRENT
(AMPS)
r
DS(on)
,
ST
A
TIC DRAIN-SOURCE ON-RESIST
ANCE
(NORMALIZED)
V
GS(th)
,
THRESHOLD VOL
T
AGE (NORMALIZED)
I
D
, DRAIN CURRENT
(AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
0
1.0 2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
V
DS,
DRAIN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
0.8
0.6
0.4
0.2
10
0
1.0 2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
V
GS,
GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60
-20
+20
+60
+100
+140
-60
-20
+20
+60
+100
+140
T, TEMPERATURE (°C)
Figure 3. Temperature versus Static
Drain­Source On­Resistance
T, TEMPERATURE (°C)
Figure 4. Temperature versus Gate
Threshold Voltage
T
A
= 25°C
V
GS
= 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
V
DS
= 10 V
-55°C
25°C
125°C
V
GS
= 10 V
I
D
= 200 mA
V
DS
= V
GS
I
D
= 1.0 mA
L2N7002LT1
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