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Datasheet: J309 (Linear Integrated Systems)

SINGLE N-CHANNEL HIGH FREQUENCY JFET

 

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Linear Integrated Systems

FEATURES
Direct Replacement For SILICONIX U/J/SST308 SERIES
OUTSTANDING HIGH FREQUENCY GAIN
G
pg
= 11.5dB
LOW HIGH FREQUENCY NOISE
NF = 2.7dB
ABSOLUTE MAXIMUM RATINGS
1
@ 25 C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 150C
Junction Operating Temperature
-55 to 135C
Maximum Power Dissipation
Continuous Power Dissipation (J/SST)
350mW
Continuous Power Dissipation (U)
500mW
Maximum Currents
Gate Current (J/SST)
10mA
Gate Current (U)
20mA
Maximum Voltages
Gate to Drain
-25V
Gate to Source
-25V
COMMON ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX
UNIT
CONDITIONS
BV
GSS
Gate to Source Breakdown Voltage
-25
I
G
= -1A, V
DS
= 0V
V
GS(F)
Gate to Source Forward Voltage
0.7
1
V
I
G
= 10mA, V
DS
= 0V
I
G
Gate Operating Current
-15
pA
V
DG
= 9V, I
D
= 10mA
r
DS(on)
Drain to Source On Resistance
35
V
GS
= 0V, I
D
= 1mA
e
n
Equivalent Noise Voltage
6
nV/Hz
V
DS
= 10V, I
D
= 10mA, f = 100Hz
f = 105MHz
1.5
NF Noise
Figure
f = 450MHz
2.7
f = 105MHz
16
G
pg
Power
Gain
2
f = 450MHz
11.5
dB
f = 105MHz
14
g
fg
Forward
Transconductance
f = 450MHz
13
f = 105MHz
0.16
g
og
Output
Conductance
f = 450MHz
0.55
mS
V
DS
= 10V, I
D
= 10mA
D
S
G
2
1
3
BOTTOM VIEW
TO-18
J SERIES
TO-92
BOTTOM VIEW
1
2
3
D S G
SST SERIES
1
2
3
SOT-23
TOP VIEW
D
G
S
Linear Integrated Systems
U/J/SST308
SERIES
SINGLE N-CHANNEL HIGH
FREQUENCY JFET







































Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261

SPECIFIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated)
J/SST308
J/SST309
J/SST310
SYM.
CHARACTERISTIC
TYP
MIN MAX
MIN MAX
MIN MAX
UNIT CONDITIONS
V
GS(off)
Gate to Source Cutoff Voltage
-1 -6.5 -1 -4 -2 -6.5 V V
DS
= 10V, I
D
= 1nA
I
DSS
Source to Drain Saturation Current
3
12 60 12 30 24 60 mA V
DS
= 10V, V
GS
= 0V
C
iss
Input
Capacitance
4 5 5 5
C
rss
Reverse Transfer Capacitance 1.9 2.5 2.5 2.5
pF
V
DS
= 10V, V
GS
= -10V
f = 1MHz
g
fs
Forward
Transconductance
14 8 10 8 mS
g
os
Output
Conductance
110 250 250 250
S
V
DS
= 10V, I
D
= 10mA
f = 1kHz









Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261




SPECIFIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated)
U308
U309
U310
SYM.
CHARACTERISTIC
TYP
MIN MAX
MIN MAX
MIN MAX
UNIT CONDITIONS
V
GS(off)
Gate to Source Cutoff Voltage
-1 -6.5 -1 -4 -2.5 -6.5 V V
DS
= 10V, I
D
= 1nA
I
DSS
Source to Drain Saturation Current
3
12 60 12 30 24 60 mA V
DS
= 10V, V
GS
= 0V
C
iss
Input
Capacitance
4 5 5 5
C
rss
Reverse Transfer Capacitance 1.9 2.5 2.5 2.5
pF
V
DS
= 10V, V
GS
= -10V
f = 1MHz
g
fs
Forward
Transconductance
14 10 10 10 mS
g
os
Output
Conductance
110 250 250 250
S
V
DS
= 10V, I
D
= 10mA
f = 1kHz
TO-18
Three Lead
0.230
0.209
DIA.
DIA.
0.195
0.175
0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016
DIA.
3 LEADS
2
1
3
0.046
0.036
45
0.048
0.028
0.100
0.050
1
2
3
LS XXX
YYWW
0.170
0.195
0.500
0.610
0.016
0.022
0.095
0.105
0.045
0.055
0.175
0.195
0.130
0.155
0.045
0.060
0.014
0.020
TO-92
DIMENSIONS
IN INCHES.
1
2
3
SOT-23
DIMENSIONS IN
MILLIMETERS
0.89
1.03
1.78
2.05
1.20
1.40
2.10
2.64
0.37
0.51
2.80
3.04
0.89
1.12
0.013
0.100
0.085
0.180
0.55
1.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
2.
Measured at optimum input noise match.
3.
Pulse test: PW 300s, Duty Cycle 3%
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio
otherwise under any patent or patent rights of Linear Integrated Systems.
n or












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