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Datasheet: J112 (Linear Integrated Systems)

SINGLE N-CHANNEL JFET

 

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Linear Integrated Systems

FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES
LOW GATE LEAKAGE CURRENT
5pA
FAST SWITCHING
4ns
ABSOLUTE MAXIMUM RATINGS
1
@ 25 C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 150C
Junction Operating Temperature
-55 to 135C
Maximum Power Dissipation
Continuous Power Dissipation (J)
360mW
Continuous Power Dissipation (SST)
350mW
Maximum Currents
Gate Current
50mA
Maximum Voltages
Gate to Drain
-35V
Gate to Source
-35V
STATIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated)
J/SST111
J/SST112
J/SST113
SYM.
CHARACTERISTIC
TYP
MIN MAX
MIN MAX
MIN MAX
UNIT CONDITIONS
BV
GSS
Gate
to
Source
Breakdown
Voltage
-35 -35 -35
I
G
= -1A, V
DS
= 0V
V
GS(off)
Gate to Source Cutoff Voltage
-3
-10
-1 -5 -3
V
DS
= 5V, I
D
= 1A
V
GS(F)
Gate
to
Source
Forward
Voltage
0.7
V
I
G
= 1mA, V
DS
= 0V
I
DSS
Drain to Source Saturation Current
2
20 5 2 mA
V
DS
= 15V, V
GS
= 0V
I
GSS
Gate
Leakage
Current
-0.005
-1 -1 -1
nA
V
GS
= -15V, V
DS
= 0V
I
G
Gate
Operating
Current
-5
pA
V
DG
= 15V, I
D
= 10mA
I
D(off)
Drain
Cutoff
Current
0.005
1 1 1
nA
V
DS
= 5V, V
GS
= -10V
r
DS(on)
Drain to Source On Resistance
30
50
100
I
G
= 1mA, V
DS
= 0V
J SERIES
TO-92
BOTTOM VIEW
1
2
3
D S G
TO 92
SST SERIES
1
2
3
SOT-23
TOP VIEW
D
G
S
Linear Integrated Systems
J/SST111 SERIES
SINGLE N-CHANNEL JFET







































Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261

DYNAMIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated)
J/SST111
J/SST112
J/SST113
SYM.
CHARACTERISTIC
TYP
MIN MAX
MIN MAX
MIN MAX
UNIT CONDITIONS
g
fs
Forward
Transconductance
6
mS
g
os
Output
Conductance
25
S
V
DS
= 20V, I
D
= 1mA
f = 1kHz
r
ds(on)
Drain to Source On Resistance
30
50
100
V
GS
= 0V, I
D
= 0mA
f = 1kHz
C
iss
Input
Capacitance
7 12 12 12
C
rss
Reverse
Transfer
Capacitance 3 5 5 5
pF
V
DS
= 0V, V
GS
= -10V
f = 1MHz
e
n
Equivalent
Noise
Voltage
3
nV/Hz
V
DG
= 10V, I
D
= 1mA
f = 1 kHz










Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
SWITCHING CIRCUIT CHARACTERISTICS
SYM.
J/SST111 J/SST112
J/SST113
V
GS(L)
-12V -7V
-5V
R
L
800 1600 3200
I
D(on)
12mA 6mA 3mA
SWITCHING CHARACTERISTICS
SYM. CHARACTERISTIC TYP UNIT CONDITIONS
t
d(on)
2
t
r
Turn On Time
2
t
d(off)
6
t
f
Turn Off Time
15
ns
V
DD
= 10V
V
GS(H)
= 0V
51
R
L
1k
51
V
DD
V
GS(H)
V
GS(L)
OUT
1
2
3
LS XXX
YYWW
0.170
0.195
0.500
0.610
0.016
0.022
0.095
0.105
0.045
0.055
0.175
0.195
0.130
0.155
0.045
0.060
0.014
0.020
TO-92
DIMENSIONS
IN INCHES.
1
2
3
SOT-23
DIMENSIONS IN
MILLIMETERS
0.89
1.03
1.78
2.05
1.20
1.40
2.10
2.64
0.37
0.51
2.80
3.04
0.89
1.12
0.013
0.100
0.085
0.180
0.55
SWITCHING TEST CIRCUIT
NOTES
1.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
2.
Pulse test: PW 300s, Duty Cycle 3%
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio
otherwise under any patent or patent rights of Linear Integrated Systems.
n or










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