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Components: 28348, pages: 29 (0.38 seconds)  
  1. K6T2008U2A-YB70 (Samsung) - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  2. K6T2008U2A-YB85 (Samsung) - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  3. K6T2008U2A-YF10 (Samsung) - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  4. K6T2008U2A-YF70 (Samsung) - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  5. K6T2008U2A-YF85 (Samsung) - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  6. K6T2008U2M (Samsung) - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  7. K6T2008U2M-B (Samsung) - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  8. K6T2008U2M-F (Samsung) - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  9. K6T2008U2M-TB10 (Samsung) - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  10. K6T2008U2M-TB85 (Samsung) - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  11. K6T2008U2M-TF10 (Samsung) - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  12. K6T2008U2M-TF85 (Samsung) - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  13. K6T2008U2M-YB10 (Samsung) - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  14. K6T2008U2M-YB85 (Samsung) - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  15. K6T2008U2M-YF10 (Samsung) - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  16. K6T2008U2M-YF85 (Samsung) - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  17. K6T2008V2A (Samsung) - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  18. K6T2008V2A-B (Samsung) - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  19. K6T2008V2A-F (Samsung) - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  20. K6T2008V2A-FF70 (Samsung) - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  21. K6T2008V2A-FF85 (Samsung) - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  22. K6T2008V2A-TB70 (Samsung) - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  23. K6T2008V2A-TB85 (Samsung) - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  24. K6T2008V2A-TF10 (Samsung) - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  25. K6T2008V2A-TF70 (Samsung) - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  26. K6T2008V2A-TF85 (Samsung) - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  27. K6T2008V2A-YB70 (Samsung) - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  28. K6T2008V2A-YB85 (Samsung) - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  29. K6T2008V2A-YF10 (Samsung) - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  30. K6T2008V2A-YF70 (Samsung) - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  31. K6T2008V2A-YF85 (Samsung) - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  32. K6T2008V2M (Samsung) - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  33. K6T2008V2M-B (Samsung) - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  34. K6T2008V2M-F (Samsung) - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  35. K6T2008V2M-TB70 (Samsung) - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  36. K6T2008V2M-TB85 (Samsung) - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  37. K6T2008V2M-TF10 (Samsung) - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  38. K6T2008V2M-TF85 (Samsung) - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  39. K6T2008V2M-YB70 (Samsung) - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  40. K6T2008V2M-YB85 (Samsung) - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  41. K6T2008V2M-YF10 (Samsung) - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  42. K6T2008V2M-YF85 (Samsung) - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  43. K6T2016S3M (Samsung) - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  44. K6T2016S3M-B (Samsung) - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  45. K6T2016S3M-F (Samsung) - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  46. K6T2016S3M-L (Samsung) - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  47. K6T2016S3M-P (Samsung) - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  48. K6T2016S3M-TB12 (Samsung) - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  49. K6T2016S3M-TB15 (Samsung) - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  50. K6T2016S3M-TF12 (Samsung) - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  51. K6T2016S3M-TF15 (Samsung) - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  52. K6T2016U3M (Samsung) - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  53. K6T2016U3M-B (Samsung) - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  54. K6T2016U3M-F (Samsung) - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  55. K6T2016U3M-L (Samsung) - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  56. K6T2016U3M-P (Samsung) - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  57. K6T2016U3M-TB10 (Samsung) - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  58. K6T2016U3M-TB85 (Samsung) - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  59. K6T2016U3M-TF10 (Samsung) - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  60. K6T2016U3M-TF85 (Samsung) - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  61. K6T4008C (Samsung) - 512kx8 Bit Low Power Cmos Static Ram
  62. K6T4008C (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  63. K6T4008C1B (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  64. K6T4008C1B-B (Samsung) - 512kx8 Bit Low Power Cmos Static Ram
  65. K6T4008C1B-DB55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  66. K6T4008C1B-DB70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  67. K6T4008C1B-DL55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  68. K6T4008C1B-DL70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  69. K6T4008C1B-F (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  70. K6T4008C1B-GB55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  71. K6T4008C1B-GB70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  72. K6T4008C1B-GF55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  73. K6T4008C1B-GF70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  74. K6T4008C1B-GL55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  75. K6T4008C1B-GL70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  76. K6T4008C1B-GP55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  77. K6T4008C1B-GP70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  78. K6T4008C1B-L (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  79. K6T4008C1B-MB55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  80. K6T4008C1B-MB70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  81. K6T4008C1B-MF55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  82. K6T4008C1B-MF70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  83. K6T4008C1B-P (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  84. K6T4008C1B-VB55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  85. K6T4008C1B-VB70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  86. K6T4008C1B-VF55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  87. K6T4008C1B-VF70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  88. K6T4008C1C (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  89. K6T4008C1C-B (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  90. K6T4008C1C-DB55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  91. K6T4008C1C-DB70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  92. K6T4008C1C-DL55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  93. K6T4008C1C-DL70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  94. K6T4008C1C-F (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  95. K6T4008C1C-GB55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  96. K6T4008C1C-GB70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  97. K6T4008C1C-GF55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  98. K6T4008C1C-GF70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  99. K6T4008C1C-GL55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  100. K6T4008C1C-GL70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  101. K6T4008C1C-GP55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  102. K6T4008C1C-GP70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  103. K6T4008C1C-L (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  104. K6T4008C1C-MB55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  105. K6T4008C1C-MB70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  106. K6T4008C1C-MF55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  107. K6T4008C1C-MF70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  108. K6T4008C1C-P (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  109. K6T4008C1C-VB55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  110. K6T4008C1C-VB70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  111. K6T4008C1C-VF55 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  112. K6T4008C1C-VF70 (Samsung) - 512Kx8 bit Low Power CMOS Static RAM
  113. K6T4008S1C (Samsung) - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  114. K6T4008S1C-F (Samsung) - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  115. K6T4008S1C-MF10 (Samsung) - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  116. K6T4008S1C-MF12 (Samsung) - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  117. K6T4008S1C-TF10 (Samsung) - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  118. K6T4008S1C-TF12 (Samsung) - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  119. K6T4008S1C-VF10 (Samsung) - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  120. K6T4008S1C-VF12 (Samsung) - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  121. K6T4008S1C-YF10 (Samsung) - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  122. K6T4008S1C-YF12 (Samsung) - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  123. K6T4008U1B (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  124. K6T4008U1B-B (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  125. K6T4008U1B-F (Samsung) - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  126. K6T4008U1B-GB10 (Samsung) - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  127. K6T4008U1B-GB85 (Samsung) - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  128. K6T4008U1B-GF10 (Samsung) - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  129. K6T4008U1B-GF85 (Samsung) - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  130. K6T4008U1B-MB10 (Samsung) - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  131. K6T4008U1B-MB85 (Samsung) - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  132. K6T4008U1B-MF10 (Samsung) - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  133. K6T4008U1B-MF85 (Samsung) - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  134. K6T4008U1B-VB10 (Samsung) - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  135. K6T4008U1B-VB85 (Samsung) - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  136. K6T4008U1B-VF10 (Samsung) - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  137. K6T4008U1B-VF85 (Samsung) - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  138. K6T4008U1C (Samsung) - K6T4008U1C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X4008T1F Recommended
  139. K6T4008U1C-B (Samsung) - 512kx8 Bit Low Power and Low Voltage Cmos Static Ram
  140. K6T4008U1C-F (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  141. K6T4008U1C-GB10 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  142. K6T4008U1C-GB70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  143. K6T4008U1C-GB85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  144. K6T4008U1C-GF10 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  145. K6T4008U1C-GF70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  146. K6T4008U1C-GF85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  147. K6T4008U1C-MB10 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  148. K6T4008U1C-MB70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  149. K6T4008U1C-MB85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  150. K6T4008U1C-MF10 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  151. K6T4008U1C-MF70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  152. K6T4008U1C-MF85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  153. K6T4008U1C-TB10 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  154. K6T4008U1C-TB70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  155. K6T4008U1C-TB85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  156. K6T4008U1C-TF10 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  157. K6T4008U1C-TF70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  158. K6T4008U1C-TF85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  159. K6T4008U1C-VB10 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  160. K6T4008U1C-VB70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  161. K6T4008U1C-VB85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  162. K6T4008U1C-VF10 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  163. K6T4008U1C-VF70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  164. K6T4008U1C-VF85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  165. K6T4008U1C-YB10 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  166. K6T4008U1C-YB70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  167. K6T4008U1C-YB85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  168. K6T4008U1C-YF10 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  169. K6T4008U1C-YF70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  170. K6T4008U1C-YF85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  171. K6T4008U2C (Samsung) - K6T4008U2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = Converted Into K6F4008U2E
  172. K6T4008U2C-F (Samsung) - K6T4008U2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = Converted Into K6F4008U2E
  173. K6T4008U2C-ZF10 (Samsung) - K6T4008U2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = Converted Into K6F4008U2E
  174. K6T4008U2C-ZF70 (Samsung) - K6T4008U2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = Converted Into K6F4008U2E
  175. K6T4008U2C-ZF85 (Samsung) - K6T4008U2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = Converted Into K6F4008U2E
  176. K6T4008V1B (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  177. K6T4008V1B-B (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  178. K6T4008V1B-F (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  179. K6T4008V1B-GB10 (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  180. K6T4008V1B-GB70 (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  181. K6T4008V1B-GB80 (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  182. K6T4008V1B-GF10 (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  183. K6T4008V1B-GF70 (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  184. K6T4008V1B-GF85 (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  185. K6T4008V1B-MB10 (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  186. K6T4008V1B-MB70 (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  187. K6T4008V1B-MB85 (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  188. K6T4008V1B-MF10 (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  189. K6T4008V1B-MF70 (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  190. K6T4008V1B-MF85 (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  191. K6T4008V1B-VB10 (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  192. K6T4008V1B-VB70 (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  193. K6T4008V1B-VB85 (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  194. K6T4008V1B-VF10 (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  195. K6T4008V1B-VF70 (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  196. K6T4008V1B-VF85 (Samsung) - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  197. K6T4008V1C (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  198. K6T4008V1C-B (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  199. K6T4008V1C-F (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  200. K6T4008V1C-GB70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  201. K6T4008V1C-GB85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  202. K6T4008V1C-GF70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  203. K6T4008V1C-GF85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  204. K6T4008V1C-MB70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  205. K6T4008V1C-MB85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  206. K6T4008V1C-MF70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  207. K6T4008V1C-MF85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  208. K6T4008V1C-TB70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  209. K6T4008V1C-TB85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  210. K6T4008V1C-TF70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  211. K6T4008V1C-TF85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  212. K6T4008V1C-VB70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  213. K6T4008V1C-VB85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  214. K6T4008V1C-VF70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  215. K6T4008V1C-VF85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  216. K6T4008V1C-YB70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  217. K6T4008V1C-YB85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  218. K6T4008V1C-YF70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  219. K6T4008V1C-YF85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  220. K6T4008V2C (Samsung) - K6T4008V2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = -
  221. K6T4008V2C-F (Samsung) - K6T4008V2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = -
  222. K6T4008V2C-ZF70 (Samsung) - K6T4008V2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = -
  223. K6T4008V2C-ZF85 (Samsung) - K6T4008V2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = -
  224. K6T4016C3B (Samsung) - 256Kx16 bit Low Power CMOS Static RAM
  225. K6T4016C3B-B (Samsung) - 256Kx16 bit Low Power CMOS Static RAM
  226. K6T4016C3B-F (Samsung) - 256kx16 Bit Low Power Cmos Static Ram
  227. K6T4016C3B-RB55 (Samsung) - 256Kx16 bit Low Power CMOS Static RAM
  228. K6T4016C3B-RB70 (Samsung) - 256Kx16 bit Low Power CMOS Static RAM
  229. K6T4016C3B-RF10 (Samsung) - 256Kx16 bit Low Power CMOS Static RAM
  230. K6T4016C3B-RF55 (Samsung) - 256Kx16 bit Low Power CMOS Static RAM
  231. K6T4016C3B-RF70 (Samsung) - 256Kx16 bit Low Power CMOS Static RAM
  232. K6T4016C3B-TB55 (Samsung) - 256Kx16 bit Low Power CMOS Static RAM
  233. K6T4016C3B-TB70 (Samsung) - 256Kx16 bit Low Power CMOS Static RAM
  234. K6T4016C3B-TF10 (Samsung) - 256Kx16 bit Low Power CMOS Static RAM
  235. K6T4016C3B-TF55 (Samsung) - 256Kx16 bit Low Power CMOS Static RAM
  236. K6T4016C3B-TF70 (Samsung) - 256Kx16 bit Low Power CMOS Static RAM
  237. K6T4016C3C (Samsung) - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  238. K6T4016C3C-B (Samsung) - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  239. K6T4016C3C-F (Samsung) - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  240. K6T4016C3C-RB55 (Samsung) - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  241. K6T4016C3C-RB70 (Samsung) - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  242. K6T4016C3C-RF55 (Samsung) - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  243. K6T4016C3C-RF70 (Samsung) - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  244. K6T4016C3C-TB55 (Samsung) - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  245. K6T4016C3C-TB70 (Samsung) - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  246. K6T4016C3C-TF55 (Samsung) - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  247. K6T4016C3C-TF70 (Samsung) - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  248. K6T4016S3C (Samsung) - K6T4016S3C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  249. K6T4016S3C-F (Samsung) - K6T4016S3C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  250. K6T4016S3C-RF10 (Samsung) - K6T4016S3C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  251. K6T4016S3C-RF12 (Samsung) - K6T4016S3C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  252. K6T4016S3C-TF10 (Samsung) - K6T4016S3C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  253. K6T4016S3C-TF12 (Samsung) - K6T4016S3C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  254. K6T4016S6C (Samsung) - K6T4016S6C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  255. K6T4016S6C-F (Samsung) - K6T4016S6C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  256. K6T4016S6C-ZF10 (Samsung) - K6T4016S6C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  257. K6T4016S6C-ZF12 (Samsung) - K6T4016S6C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  258. K6T4016U3B (Samsung) - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  259. K6T4016U3B-B (Samsung) - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  260. K6T4016U3B-F (Samsung) - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  261. K6T4016U3B-RB10 (Samsung) - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  262. K6T4016U3B-RB85 (Samsung) - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  263. K6T4016U3B-RF10 (Samsung) - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  264. K6T4016U3B-RF85 (Samsung) - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  265. K6T4016U3B-TB10 (Samsung) - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  266. K6T4016U3B-TB85 (Samsung) - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  267. K6T4016U3B-TF10 (Samsung) - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  268. K6T4016U3B-TF85 (Samsung) - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  269. K6T4016U3C (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  270. K6T4016U3C-B (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  271. K6T4016U3C-F (Samsung) - 256kx16 Bit Low Power and Low Voltage Cmos Static Ram
  272. K6T4016U3C-RB10 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  273. K6T4016U3C-RB70 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  274. K6T4016U3C-RB85 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  275. K6T4016U3C-RF10 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  276. K6T4016U3C-RF70 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  277. K6T4016U3C-RF85 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  278. K6T4016U3C-TB10 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  279. K6T4016U3C-TB70 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  280. K6T4016U3C-TB85 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  281. K6T4016U3C-TF10 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  282. K6T4016U3C-TF70 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  283. K6T4016U3C-TF85 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  284. K6T4016U4C (Samsung) - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  285. K6T4016U4C-F (Samsung) - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  286. K6T4016U4C-ZF10 (Samsung) - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  287. K6T4016U4C-ZF70 (Samsung) - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  288. K6T4016U4C-ZF85 (Samsung) - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  289. K6T4016U6C (Samsung) - K6T4016U6C 256Kx16 Bit Low Power and Low Voltage CMOS Staticram ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  290. K6T4016U6C-F (Samsung) - K6T4016U6C 256Kx16 Bit Low Power and Low Voltage CMOS Staticram ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  291. K6T4016U6C-ZF10 (Samsung) - K6T4016U6C 256Kx16 Bit Low Power and Low Voltage CMOS Staticram ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  292. K6T4016U6C-ZF70 (Samsung) - K6T4016U6C 256Kx16 Bit Low Power and Low Voltage CMOS Staticram ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  293. K6T4016U6C-ZF85 (Samsung) - K6T4016U6C 256Kx16 Bit Low Power and Low Voltage CMOS Staticram ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  294. K6T4016V3B (Samsung) - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  295. K6T4016V3B-B (Samsung) - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  296. K6T4016V3B-F (Samsung) - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  297. K6T4016V3B-RB70 (Samsung) - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  298. K6T4016V3B-RB85 (Samsung) - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  299. K6T4016V3B-RF10 (Samsung) - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  300. K6T4016V3B-RF85 (Samsung) - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  301. K6T4016V3B-TB70 (Samsung) - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  302. K6T4016V3B-TB85 (Samsung) - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  303. K6T4016V3B-TF10 (Samsung) - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  304. K6T4016V3B-TF85 (Samsung) - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  305. K6T4016V3C (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  306. K6T4016V3C-B (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  307. K6T4016V3C-F (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  308. K6T4016V3C-RB10 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  309. K6T4016V3C-RB70 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  310. K6T4016V3C-RB85 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  311. K6T4016V3C-RF10 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  312. K6T4016V3C-RF70 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  313. K6T4016V3C-RF85 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  314. K6T4016V3C-TB10 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  315. K6T4016V3C-TB55 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  316. K6T4016V3C-TB70 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  317. K6T4016V3C-TB85 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  318. K6T4016V3C-TF10 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  319. K6T4016V3C-TF70 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  320. K6T4016V3C-TF85 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  321. K6T4016V4C (Samsung) - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  322. K6T4016V4C-F (Samsung) - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  323. K6T4016V4C-ZF10 (Samsung) - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  324. K6T4016V4C-ZF70 (Samsung) - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  325. K6T4016V4C-ZF85 (Samsung) - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  326. K6T8008C2M (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  327. K6T8008C2M-B (Samsung) - 1mx8 Bit Low Power and Low Voltage Cmos Static Ram
  328. K6T8008C2M-F (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  329. K6T8008C2M-RB55 (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  330. K6T8008C2M-RB70 (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  331. K6T8008C2M-RF55 (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  332. K6T8008C2M-RF70 (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  333. K6T8008C2M-TB55 (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  334. K6T8008C2M-TB70 (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  335. K6T8008C2M-TF55 (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  336. K6T8008C2M-TF70 (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  337. K6T8016C3M (Samsung) - 512Kx16 bit Low Power CMOS Static RAM
  338. K6T8016C3M-B (Samsung) - 512Kx16 bit Low Power CMOS Static RAM
  339. K6T8016C3M-F (Samsung) - 512kx16 Bit Low Power Cmos Static Ram
  340. K6T8016C3M-RB55 (Samsung) - 512Kx16 bit Low Power CMOS Static RAM
  341. K6T8016C3M-RB70 (Samsung) - 512Kx16 bit Low Power CMOS Static RAM
  342. K6T8016C3M-RF55 (Samsung) - 512Kx16 bit Low Power CMOS Static RAM
  343. K6T8016C3M-RF70 (Samsung) - 512Kx16 bit Low Power CMOS Static RAM
  344. K6T8016C3M-TB55 (Samsung) - 512Kx16 bit Low Power CMOS Static RAM
  345. K6T8016C3M-TB70 (Samsung) - 512Kx16 bit Low Power CMOS Static RAM
  346. K6T8016C3M-TF55 (Samsung) - 512Kx16 bit Low Power CMOS Static RAM
  347. K6T8016C3M-TF70 (Samsung) - 512Kx16 bit Low Power CMOS Static RAM
  348. K6X0808C1D (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  349. K6X0808C1D-DF55 (Samsung) - 32kx8 Bit Low Power Cmos Static Ram
  350. K6X0808C1D-DF70 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  351. K6X0808C1D-F (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  352. K6X0808C1D-GF55 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  353. K6X0808C1D-GF70 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  354. K6X0808C1D-GQ55 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  355. K6X0808C1D-GQ70 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  356. K6X0808C1D-Q (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  357. K6X0808C1D-RF55 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  358. K6X0808C1D-RF70 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  359. K6X0808C1D-TF55 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  360. K6X0808C1D-TF70 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  361. K6X0808C1D-TQ55 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  362. K6X0808C1D-TQ70 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  363. K6X0808T1D (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  364. K6X0808T1D-B (Samsung) - 32kx8 Bit Low Power Cmos Static Ram
  365. K6X0808T1D-F (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  366. K6X0808T1D-GB70 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  367. K6X0808T1D-GB85 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  368. K6X0808T1D-GF70 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  369. K6X0808T1D-GF85 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  370. K6X0808T1D-GQ70 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  371. K6X0808T1D-GQ85 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  372. K6X0808T1D-NB70 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  373. K6X0808T1D-NB85 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  374. K6X0808T1D-NF70 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  375. K6X0808T1D-NF85 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  376. K6X0808T1D-Q (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  377. K6X0808T1D-YB70 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  378. K6X0808T1D-YB85 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  379. K6X0808T1D-YF70 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  380. K6X0808T1D-YF85 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  381. K6X0808T1D-YQ70 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  382. K6X0808T1D-YQ85 (Samsung) - 32Kx8 bit Low Power CMOS Static RAM
  383. K6X1008C2D (Samsung) - 128kx8 Bit Low Power Cmos Static Ram
  384. K6X1008C2D-B (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  385. K6X1008C2D-BB55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  386. K6X1008C2D-BB70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  387. K6X1008C2D-BF55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  388. K6X1008C2D-BF70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  389. K6X1008C2D-DB55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  390. K6X1008C2D-DB70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  391. K6X1008C2D-DF55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  392. K6X1008C2D-DF70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  393. K6X1008C2D-F (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  394. K6X1008C2D-GB55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  395. K6X1008C2D-GB70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  396. K6X1008C2D-GF55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  397. K6X1008C2D-GF70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  398. K6X1008C2D-GQ55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  399. K6X1008C2D-GQ70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  400. K6X1008C2D-PB55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  401. K6X1008C2D-PB70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  402. K6X1008C2D-PF55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  403. K6X1008C2D-PF70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  404. K6X1008C2D-Q (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  405. K6X1008C2D-TB55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  406. K6X1008C2D-TB70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  407. K6X1008C2D-TF55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  408. K6X1008C2D-TF70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  409. K6X1008C2D-TQ55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  410. K6X1008C2D-TQ70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  411. K6X1008T2D (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  412. K6X1008T2D-B (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  413. K6X1008T2D-BB551 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  414. K6X1008T2D-BB70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  415. K6X1008T2D-BB85 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  416. K6X1008T2D-BF55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  417. K6X1008T2D-BF70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  418. K6X1008T2D-BF85 (Samsung) - 128kx8 Bit Low Power Cmos Static Ram
  419. K6X1008T2D-F (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  420. K6X1008T2D-GB55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  421. K6X1008T2D-GB551 (Samsung) - K6X1008T2D 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 25 ; Standby Current(uA) = 10,20 ; Package = 32DIP,32SOP,32TSOP1 ; Production Status = Mass Production ; Comments = D-die
  422. K6X1008T2D-GB70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  423. K6X1008T2D-GB85 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  424. K6X1008T2D-GF55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  425. K6X1008T2D-GF70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  426. K6X1008T2D-GF85 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  427. K6X1008T2D-GQ70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  428. K6X1008T2D-GQ85 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  429. K6X1008T2D-PB55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  430. K6X1008T2D-PB70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  431. K6X1008T2D-PB85 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  432. K6X1008T2D-PF55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  433. K6X1008T2D-PF70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  434. K6X1008T2D-PF85 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  435. K6X1008T2D-Q (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  436. K6X1008T2D-TB55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  437. K6X1008T2D-TB551 (Samsung) - K6X1008T2D 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 25 ; Standby Current(uA) = 10,20 ; Package = 32DIP,32SOP,32TSOP1 ; Production Status = Mass Production ; Comments = D-die
  438. K6X1008T2D-TB70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  439. K6X1008T2D-TB85 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  440. K6X1008T2D-TF55 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  441. K6X1008T2D-TF551 (Samsung) - K6X1008T2D 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 25 ; Standby Current(uA) = 10,20 ; Package = 32DIP,32SOP,32TSOP1 ; Production Status = Mass Production ; Comments = D-die
  442. K6X1008T2D-TF70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  443. K6X1008T2D-TF85 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  444. K6X1008T2D-TQ70 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  445. K6X1008T2D-TQ85 (Samsung) - 128Kx8 bit Low Power CMOS Static RAM
  446. K6X4008C1F (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  447. K6X4008C1F-B (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  448. K6X4008C1F-BB55 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  449. K6X4008C1F-BB70 (Samsung) - 512kx8 Bit Low Power Full Cmos Static Ram
  450. K6X4008C1F-BF55 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  451. K6X4008C1F-BF70 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  452. K6X4008C1F-DB55 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  453. K6X4008C1F-DB70 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  454. K6X4008C1F-DF55 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  455. K6X4008C1F-DF70 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  456. K6X4008C1F-F (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  457. K6X4008C1F-GB55 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  458. K6X4008C1F-GB70 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  459. K6X4008C1F-GF55 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  460. K6X4008C1F-GF70 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  461. K6X4008C1F-GQ55 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  462. K6X4008C1F-GQ70 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  463. K6X4008C1F-MB55 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  464. K6X4008C1F-MB70 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  465. K6X4008C1F-MF55 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  466. K6X4008C1F-MF70 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  467. K6X4008C1F-Q (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  468. K6X4008C1F-VB55 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  469. K6X4008C1F-VB70 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  470. K6X4008C1F-VF55 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  471. K6X4008C1F-VF70 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  472. K6X4008C1F-VQ55 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  473. K6X4008C1F-VQ70 (Samsung) - 512Kx8 bit Low Power full CMOS Static RAM
  474. K6X4008T1F (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  475. K6X4008T1F-B (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  476. K6X4008T1F-F (Samsung) - 512kx8 Bit Low Power and Low Voltage Cmos Static Ram
  477. K6X4008T1F-GB55 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  478. K6X4008T1F-GB551 (Samsung) - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
  479. K6X4008T1F-GB70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  480. K6X4008T1F-GB85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  481. K6X4008T1F-GF55 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  482. K6X4008T1F-GF551 (Samsung) - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
  483. K6X4008T1F-GF70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  484. K6X4008T1F-GF85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  485. K6X4008T1F-GQ70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  486. K6X4008T1F-GQ85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  487. K6X4008T1F-MB55 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  488. K6X4008T1F-MB551 (Samsung) - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
  489. K6X4008T1F-MB70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  490. K6X4008T1F-MB85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  491. K6X4008T1F-MF55 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  492. K6X4008T1F-MF551 (Samsung) - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
  493. K6X4008T1F-MF70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  494. K6X4008T1F-MF85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  495. K6X4008T1F-Q (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  496. K6X4008T1F-VB55 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  497. K6X4008T1F-VB551 (Samsung) - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
  498. K6X4008T1F-VB70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  499. K6X4008T1F-VB85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  500. K6X4008T1F-VF55 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  501. K6X4008T1F-VF551 (Samsung) - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
  502. K6X4008T1F-VF70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  503. K6X4008T1F-VF85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  504. K6X4008T1F-VQ70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  505. K6X4008T1F-VQ85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  506. K6X4008T1F-YB55 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  507. K6X4008T1F-YB551 (Samsung) - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
  508. K6X4008T1F-YB70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  509. K6X4008T1F-YB85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  510. K6X4008T1F-YF55 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  511. K6X4008T1F-YF551 (Samsung) - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
  512. K6X4008T1F-YF70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  513. K6X4008T1F-YF85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  514. K6X4008T1F-YQ70 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  515. K6X4008T1F-YQ85 (Samsung) - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  516. K6X4016C3F (Samsung) - 256kx16 Bit Low Power Full Cmos Static Ram
  517. K6X4016C3F-B (Samsung) - 256Kx16 bit Low Power full CMOS Static RAM
  518. K6X4016C3F-F (Samsung) - 256Kx16 bit Low Power full CMOS Static RAM
  519. K6X4016C3F-Q (Samsung) - 256Kx16 bit Low Power full CMOS Static RAM
  520. K6X4016C3F-TB55 (Samsung) - 256Kx16 bit Low Power full CMOS Static RAM
  521. K6X4016C3F-TB70 (Samsung) - 256Kx16 bit Low Power full CMOS Static RAM
  522. K6X4016C3F-TF55 (Samsung) - 256Kx16 bit Low Power full CMOS Static RAM
  523. K6X4016C3F-TF70 (Samsung) - 256Kx16 bit Low Power full CMOS Static RAM
  524. K6X4016C3F-TQ55 (Samsung) - 256Kx16 bit Low Power full CMOS Static RAM
  525. K6X4016C3F-TQ70 (Samsung) - 256Kx16 bit Low Power full CMOS Static RAM
  526. K6X4016T3F (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  527. K6X4016T3F-B (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  528. K6X4016T3F-F (Samsung) - 256kx16 Bit Low Power and Low Voltage Cmos Static Ram
  529. K6X4016T3F-Q (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  530. K6X4016T3F-TB55 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  531. K6X4016T3F-TB551 (Samsung) - K6X4016T3F 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 40 ; Standby Current(uA) = 20,30 ; Package = 44TSOP2 ; Production Status = Mass Product ; Comments = Product
  532. K6X4016T3F-TB70 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  533. K6X4016T3F-TB85 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  534. K6X4016T3F-TF55 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  535. K6X4016T3F-TF551 (Samsung) - K6X4016T3F 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 40 ; Standby Current(uA) = 20,30 ; Package = 44TSOP2 ; Production Status = Mass Product ; Comments = Product
  536. K6X4016T3F-TF70 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  537. K6X4016T3F-TF85 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  538. K6X4016T3F-TQ70 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  539. K6X4016T3F-TQ85 (Samsung) - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  540. K6X8008C2B (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  541. K6X8008C2B-B (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  542. K6X8008C2B-F (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  543. K6X8008C2B-Q (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  544. K6X8008C2B-TB55 (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  545. K6X8008C2B-TB70 (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  546. K6X8008C2B-TF55 (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  547. K6X8008C2B-TF70 (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  548. K6X8008C2B-TQ55 (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  549. K6X8008C2B-TQ70 (Samsung) - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  550. K6X8008T2B (Samsung) - CMOS SRAM
  551. K6X8008T2B-F (Samsung) - CMOS SRAM
  552. K6X8008T2B-Q (Samsung) - CMOS SRAM
  553. K6X8008T2B-TF551 (Samsung) - K6X8008T2B 1Mx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 1024Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 40 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  554. K6X8008T2B-TF70 (Samsung) - K6X8008T2B 1Mx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 1024Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 40 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  555. K6X8008T2B-TQ70 (Samsung) - K6X8008T2B 1Mx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 1024Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 40 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  556. K6X8016C3B (Samsung) - 512Kx16 bit Low Power Full CMOS Static RAM
  557. K6X8016C3B-B (Samsung) - K6X8016C3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  558. K6X8016C3B-F (Samsung) - K6X8016C3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  559. K6X8016C3B-Q (Samsung) - K6X8016C3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  560. K6X8016C3B-TB55 (Samsung) - K6X8016C3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  561. K6X8016C3B-TB70 (Samsung) - K6X8016C3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  562. K6X8016C3B-TF55 (Samsung) - K6X8016C3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  563. K6X8016C3B-TF70 (Samsung) - K6X8016C3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  564. K6X8016C3B-TQ55 (Samsung) - K6X8016C3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  565. K6X8016C3B-TQ70 (Samsung) - K6X8016C3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  566. K6X8016T3B (Samsung) - 512Kx16 bit Low Power Full CMOS Static RAM
  567. K6X8016T3B-F (Samsung) - 512Kx16 bit Low Power Full CMOS Static RAM
  568. K6X8016T3B-Q (Samsung) - 512Kx16 bit Low Power Full CMOS Static RAM
  569. K6X8016T3B-TF55 (Samsung) - 512kx16 Bit Low Power Full Cmos Static Ram
  570. K6X8016T3B-TF551 (Samsung) - K6X8016T3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 40 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  571. K6X8016T3B-TF70 (Samsung) - 512Kx16 bit Low Power Full CMOS Static RAM
  572. K6X8016T3B-TQ70 (Samsung) - 512Kx16 bit Low Power Full CMOS Static RAM
  573. K7 (No company) - KS Series KEY SWITCHES
  574. K7252M (No company) - If Filter Intercarrier/multistandard Applications
  575. K7257M (EPCOS) - SAW Components
  576. К740УД5-1 (RD Alfa) - Операционный усилитель общего применения
  577. K7A161800A (Samsung) - 512kx36 & 1mx18 Synchronous Sram
  578. K7A161800A-FC14 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  579. K7A161800A-FC16 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  580. K7A161800A-FC20 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  581. K7A161800A-FC22 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  582. K7A161800A-FC25 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  583. K7A161800A-FI14 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  584. K7A161800A-FI16 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  585. K7A161800A-FI20 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  586. K7A161800A-FI22 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  587. K7A161800A-FI25 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  588. K7A161800A-QC(I)25/16/14 (Samsung) - 1Mx18-Bit Synchronous Pipelined Burst SRAMThe K7A163600A and K7A161800A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  589. K7A161800A-QC14 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  590. K7A161800A-QC16 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  591. K7A161800A-QC20 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  592. K7A161800A-QC22 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  593. K7A161800A-QC25 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  594. K7A161800A-QI14 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  595. K7A161800A-QI16 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  596. K7A161800A-QI20 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  597. K7A161800A-QI22 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  598. K7A161800A-QI25 (Samsung) - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  599. K7A161800M (Samsung) - K7A161800M 512K X 36 & 1M X 18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.3,3.8,4.0,4.5 ; Speed-tcyc (MHz) = 183,150,138,100 ; I/o Voltage(V) = 2.5,3.3 ; Package = 10TQFP,119BGA ; Production Status = Eol ; Comments = 2E1D
  600. K7A161801A (Samsung) - 512Kx36 & 1Mx18 Synchronous SRAM
  601. K7A161801A-QC14 (Samsung) - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  602. K7A161801A-QC16 (Samsung) - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  603. K7A161801A-QC20 (Samsung) - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  604. K7A161801A-QC22 (Samsung) - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  605. K7A161801A-QC25 (Samsung) - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  606. K7A161801A-QI14 (Samsung) - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  607. K7A161801A-QI16 (Samsung) - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  608. K7A161801A-QI20 (Samsung) - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  609. K7A161801A-QI22 (Samsung) - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  610. K7A161801A-QI25 (Samsung) - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  611. K7A161801M (Samsung) - K7A161801M 512K X 36 & 1M X 18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.8,4.0,4.5 ; Speed-tcyc (MHz) = 150,138,100 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E2D
  612. K7A161830B (Samsung) - 1Mx18-Bit Synchronous Pipelined Burst SRAMThe K7A161830B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  613. K7A161830B-PI16 (Samsung) - 18mb B-die Sync Sram Specification 100tqfp With Pb, Pb-free
  614. K7A161830B-PI25 (Samsung) - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  615. K7A161830B-Q(P)C(1)25-16 (Samsung) - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  616. K7A161830B-Q(P)C(I)25/16 (Samsung) - 1Mx18-Bit Synchronous Pipelined Burst SRAMThe K7A161830B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  617. K7A161831B-PI20 (Samsung) - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  618. K7A161831B-Q(P)C(1)20 (Samsung) - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  619. K7A161835B-Q(P)C(1)75 (Samsung) - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  620. K7A161880A (Samsung) - K7A161880A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 1.8 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  621. K7A161880A-QC14 (Samsung) - K7A161880A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 1.8 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  622. K7A161880A-QI14 (Samsung) - K7A161880A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 1.8 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  623. K7A163200A (Samsung) - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  624. K7A163200A-QC14 (Samsung) - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  625. K7A163200A-QC16 (Samsung) - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  626. K7A163200A-QC20 (Samsung) - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  627. K7A163200A-QC22 (Samsung) - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  628. K7A163200A-QC25 (Samsung) - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  629. K7A163200A-QI14 (Samsung) - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  630. K7A163200A-QI16 (Samsung) - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  631. K7A163200A-QI20 (Samsung) - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  632. K7A163200A-QI22 (Samsung) - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  633. K7A163200A-QI25 (Samsung) - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  634. K7A163201A (Samsung) - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  635. K7A163201A-QC14 (Samsung) - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  636. K7A163201A-QC16 (Samsung) - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  637. K7A163201A-QC20 (Samsung) - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  638. K7A163201A-QC22 (Samsung) - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  639. K7A163201A-QC25 (Samsung) - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  640. K7A163201A-QI14 (Samsung) - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  641. K7A163201A-QI16 (Samsung) - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  642. K7A163201A-QI20 (Samsung) - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  643. K7A163201A-QI25 (Samsung) - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  644. K7A163600A (Samsung) - 512Kx36 & 1Mx18 Synchronous SRAM
  645. K7A163600A-QC(I)25/16/14 (Samsung) - 512Kx36 -Bit Synchronous Pipelined Burst SRAMThe K7A163600A and K7A161800A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.It is organized as 512K(1M) words of 36(32/18) bits and integrates address and control registers,A 2-bit burst address counter and added some new functions for high performance cache RAM applications; /GW, /BW, /LBO, ZZ. Write cycles are internally self-timed and synchronous.
  646. K7A163600A-QC14 (Samsung) - K7A163600A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  647. K7A163600A-QC16 (Samsung) - K7A163600A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  648. K7A163600A-QC20 (Samsung) - K7A163600A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  649. K7A163600A-QC22 (Samsung) - K7A163600A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  650. K7A163600A-QC25 (Samsung) - K7A163600A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  651. K7A163600A-QI14 (Samsung) - K7A163600A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  652. K7A163600A-QI16 (Samsung) - K7A163600A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  653. K7A163600A-QI20 (Samsung) - K7A163600A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  654. K7A163600A-QI25 (Samsung) - K7A163600A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  655. K7A163600M (Samsung) - K7A163600M 512K X 36 & 1M X 18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.3,3.8,4.0,4.5 ; Speed-tcyc (MHz) = 150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100QFP,119BGA ; Production Status = Eol ; Comments = 2E1D
  656. K7A163601A (Samsung) - 512Kx36 & 1Mx18 Synchronous SRAM
  657. K7A163601A-QC(I)20/16 (Samsung) - 512Kx36 -Bit Synchronous Pipelined Burst SRAMThe K7A163601A and K7A161801A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.It is organized as 512K(1M) words of 36(32/18) bits and integrates address and control registers,A 2-bit burst address counter and added some new functions for high performance cache RAM applications; /GW, /BW, /LBO, ZZ. Write cycles are internally self-timed and synchronous.
  658. K7A163601A-QC14 (Samsung) - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  659. K7A163601A-QC16 (Samsung) - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  660. K7A163601A-QC20 (Samsung) - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  661. K7A163601A-QC22 (Samsung) - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  662. K7A163601A-QC25 (Samsung) - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  663. K7A163601A-QI14 (Samsung) - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  664. K7A163601A-QI16 (Samsung) - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  665. K7A163601A-QI20 (Samsung) - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  666. K7A163601A-QI22 (Samsung) - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  667. K7A163601A-QI25 (Samsung) - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  668. K7A163601M (Samsung) - K7A163601M 512K X 36 & 1M X 18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.8,4.0,4.5 ; Speed-tcyc (MHz) = 150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E2D
  669. K7A163630B (Samsung) - 512Kx36-Bit Synchronous Pipelined Burst SRAMThe K7A163630B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  670. K7A163630B-PI16 (Samsung) - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  671. K7A163630B-PI25 (Samsung) - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  672. K7A163630B-Q(P)C(I)25/16 (Samsung) - 512Kx36-Bit Synchronous Pipelined Burst SRAMThe K7A163630B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  673. K7A163631B (Samsung) - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  674. K7A163631B-PI20 (Samsung) - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  675. K7A163631B-Q(P)C(I)20 (Samsung) - 512Kx36-Bit Synchronous Pipelined Burst SRAMThe K7A163631B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  676. K7A163680A (Samsung) - K7A163680A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 1.8 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  677. K7A163680A-QC14 (Samsung) - K7A163680A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 1.8 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  678. K7A163680A-QI14 (Samsung) - K7A163680A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 1.8 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  679. K7A201800A (Samsung) - 128Kx18 Synchronous SRAM
  680. K7A201800B (Samsung) - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  681. K7A201800B-QC14 (Samsung) - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  682. K7A201800B-QC16 (Samsung) - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  683. K7A201800B-QC20 (Samsung) - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  684. K7A201800B-QC22 (Samsung) - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  685. K7A201800B-QC25 (Samsung) - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  686. K7A201800B-QI14 (Samsung) - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  687. K7A201800B-QI16 (Samsung) - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  688. K7A201800B-QI20 (Samsung) - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  689. K7A201800B-QI22 (Samsung) - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  690. K7A201800B-QI25 (Samsung) - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  691. K7A203200A (Samsung) - K7A203200A 64K X 32-Bit Synchronous Pipelined Burst SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.8,4.0,4.5 ; Speed-tcyc (MHz) = 150,138,117,100 ; I/o Voltage(V) = 2.5,3.3 ; Package = TQFP ; Production Status = Eol ; Comments = Design is Not Recommended
  692. K7A203200B (Samsung) - 64Kx36/x32 Synchronous SRAM
  693. K7A203200B-QC(I)14 (Samsung) - 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
  694. K7A203200B-QC14 (Samsung) - 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
  695. K7A203200B-QC14 (Samsung) - 64kx36/x32 Synchronous Sram
  696. K7A203200B-QC16 (Samsung) - K7A203200B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  697. K7A203200B-QC20 (Samsung) - K7A203200B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  698. K7A203200B-QC22 (Samsung) - K7A203200B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  699. K7A203200B-QC25 (Samsung) - K7A203200B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  700. K7A203200B-QCI14 (Samsung) - 64Kx36/x32 Synchronous SRAM
  701. K7A203200B-QI14 (Samsung) - K7A203200B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  702. K7A203200B-QI16 (Samsung) - K7A203200B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  703. K7A203200B-QI20 (Samsung) - K7A203200B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  704. K7A203200B-QI22 (Samsung) - K7A203200B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  705. K7A203200B-QI25 (Samsung) - K7A203200B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  706. K7A203600 (Samsung) - 64kx36-bit Synchronous Pipelined Burst Sram
  707. K7A203600A (Samsung) - 64Kx36-Bit Synchronous Pipelined Burst SRAM
  708. K7A203600B (Samsung) - 64Kx36/x32 Synchronous SRAM
  709. K7A203600B-QC(I)14 (Samsung) - 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
  710. K7A203600B-QC14 (Samsung) - 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
  711. K7A203600B-QC14 (Samsung) - 64Kx36/x32 Synchronous SRAM
  712. K7A203600B-QC16 (Samsung) - K7A203600B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  713. K7A203600B-QC20 (Samsung) - K7A203600B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  714. K7A203600B-QC22 (Samsung) - K7A203600B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  715. K7A203600B-QC25 (Samsung) - K7A203600B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  716. K7A203600B-QCI14 (Samsung) - 64Kx36/x32 Synchronous SRAM
  717. K7A203600B-QI14 (Samsung) - K7A203600B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  718. K7A203600B-QI16 (Samsung) - K7A203600B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  719. K7A203600B-QI20 (Samsung) - K7A203600B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  720. K7A203600B-QI22 (Samsung) - K7A203600B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  721. K7A203600B-QI25 (Samsung) - K7A203600B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  722. K7A321800M (Samsung) - 1Mx36 & 2Mx18 Synchronous SRAM
  723. K7A321800M-QC(I)25/20/14 (Samsung) - 1Mx36 Bit Synchronous Pipelined Burst SRAMThe K7A323600M and K7A321800M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.It is organized as 1M(2M) words of 36(18) bits and integrates address and control registers,A 2-bit burst address counter and added some new functions for high performance cache RAM applications; /GW, /BW, /LBO, ZZ. Write cycles are internally self-timed and synchronous.
  724. K7A321800M-QC14 (Samsung) - 1mx36 & 2mx18 Synchronous Sram
  725. K7A321800M-QC14 (Samsung) - 1Mx36 & 2Mx18 Synchronous SRAM
  726. K7A321800M-QC20 (Samsung) - 1Mx36 & 2Mx18 Synchronous SRAM
  727. K7A321800M-QC20 (Samsung) - 1Mx36 & 2Mx18 Synchronous SRAM
  728. K7A321800M-QC25 (Samsung) - 1Mx36 & 2Mx18 Synchronous SRAM
  729. K7A321801M (Samsung) - K7A321801M 2Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  730. K7A321801M-QC14 (Samsung) - K7A321801M 2Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  731. K7A321801M-QC15 (Samsung) - K7A321801M 2Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  732. K7A321801M-QC16 (Samsung) - K7A321801M 2Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  733. K7A321801M-QC20 (Samsung) - K7A321801M 2Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  734. K7A321801M-QC22 (Samsung) - K7A321801M 2Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  735. K7A321801M-QC25 (Samsung) - K7A321801M 2Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  736. K7A323600M (Samsung) - 1mx36 & 2mx18 Synchronous Sram
  737. K7A323600M-QC(I)25/20/14 (Samsung) - 1Mx36 Bit Synchronous Burst SRAMThe K7B323625M and K7B321825M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  738. K7A323600M-QC14 (Samsung) - 1Mx36 & 2Mx18 Synchronous SRAM
  739. K7A323600M-QC14 (Samsung) - 1Mx36 & 2Mx18 Synchronous SRAM
  740. K7A323600M-QC20 (Samsung) - 1Mx36 & 2Mx18 Synchronous SRAM
  741. K7A323600M-QC20 (Samsung) - 1Mx36 & 2Mx18 Synchronous SRAM
  742. K7A323600M-QC25 (Samsung) - 1Mx36 & 2Mx18 Synchronous SRAM
  743. K7A323600M-QC25 (Samsung) - 1Mx36 & 2Mx18 Synchronous SRAM
  744. K7A323601M (Samsung) - K7A323601M 1Mx36 Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  745. K7A323601M-QC14 (Samsung) - K7A323601M 1Mx36 Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  746. K7A323601M-QC15 (Samsung) - K7A323601M 1Mx36 Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  747. K7A323601M-QC16 (Samsung) - K7A323601M 1Mx36 Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  748. K7A323601M-QC20 (Samsung) - K7A323601M 1Mx36 Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  749. K7A323601M-QC22 (Samsung) - K7A323601M 1Mx36 Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  750. K7A323601M-QC25 (Samsung) - K7A323601M 1Mx36 Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  751. K7A401800A (Samsung) - K7A401800A 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.0 ; Speed-tcyc (MHz) = 167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  752. K7A401800B (Samsung) - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  753. K7A401800B-QC (Samsung) - 128kx36/x32 & 256kx18 Synchronous Sram
  754. K7A401800B-QC(I)16/14 (Samsung) - 256Kx18-Bit Synchronous Pipelined Burst SRAMhe K7A403600B, K7A403200B and K7A401800B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  755. K7A401800B-QC14 (Samsung) - K7A401800B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  756. K7A401800B-QC16 (Samsung) - K7A401800B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  757. K7A401800B-QI14 (Samsung) - K7A401800B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  758. K7A401800B-QI16 (Samsung) - K7A401800B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  759. K7A401800M (Samsung) - 256kx18 Synchronous Sram
  760. K7A401809A (Samsung) - 128kx36 & 256kx18-bit Synchronous Pipelined Burst Sram
  761. K7A401809B (Samsung) - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  762. K7A401809B-QC (Samsung) - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  763. K7A401809B-QC20 (Samsung) - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  764. K7A401809B-QC22 (Samsung) - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  765. K7A401809B-QC25 (Samsung) - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  766. K7A401809B-QC27 (Samsung) - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  767. K7A401809B-QC30 (Samsung) - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  768. K7A401809B-QI20 (Samsung) - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  769. K7A401809B-QI22 (Samsung) - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  770. K7A401809B-QI25 (Samsung) - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  771. K7A401809B-QI27 (Samsung) - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  772. K7A401809B-QI30 (Samsung) - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  773. K7A401844A (Samsung) - K7A401844A 256K X 18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 3.8,4.0 ; Speed-tcyc (MHz) = 150,138 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  774. K7A401849A (Samsung) - K7A401849A 128K X 18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.2,2.5,2.8,3.1,3.5 ; Speed-tcyc (MHz) = 275,250,225,200,167 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  775. K7A403200B (Samsung) - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  776. K7A403200B-QC (Samsung) - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  777. K7A403200B-QC(I)16/14 (Samsung) - 128Kx32 Bit Synchronous Pipelined Burst SRAMThe K7A403600B, K7A403200B and K7A401800B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System
  778. K7A403200B-QC14 (Samsung) - K7A403200B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  779. K7A403200B-QC16 (Samsung) - K7A403200B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  780. K7A403200B-QI14 (Samsung) - K7A403200B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  781. K7A403200B-QI16 (Samsung) - K7A403200B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  782. K7A403200M (Samsung) - 128Kx32-Bit Synchronous Pipelined Burst SRAM
  783. K7A403200M-10 (Samsung) - 128Kx32-Bit Synchronous Pipelined Burst SRAM
  784. K7A403200M-14 (Samsung) - 128kx32-bit Synchronous Pipelined Burst Sram
  785. K7A403200M-15 (Samsung) - 128Kx32-Bit Synchronous Pipelined Burst SRAM
  786. K7A403200M-16 (Samsung) - 128Kx32-Bit Synchronous Pipelined Burst SRAM
  787. K7A403201B (Samsung) - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  788. K7A403201B-QC (Samsung) - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  789. K7A403201B-QC14 (Samsung) - K7A403201B 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E2D
  790. K7A403201B-QC16 (Samsung) - K7A403201B 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E2D
  791. K7A403201B-QI14 (Samsung) - K7A403201B 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E2D
  792. K7A403201B-QI16 (Samsung) - K7A403201B 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E2D
  793. K7A403209B (Samsung) - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  794. K7A403209B-QC (Samsung) - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  795. K7A403209B-QC20 (Samsung) - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  796. K7A403209B-QC22 (Samsung) - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  797. K7A403209B-QC25 (Samsung) - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  798. K7A403209B-QC27 (Samsung) - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  799. K7A403209B-QC30 (Samsung) - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  800. K7A403209B-QI20 (Samsung) - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  801. K7A403209B-QI22 (Samsung) - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  802. K7A403209B-QI25 (Samsung) - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  803. K7A403209B-QI27 (Samsung) - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  804. K7A403209B-QI30 (Samsung) - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  805. K7A403600A (Samsung) - K7A403600A 128Kx36-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.0 ; Speed-tcyc (MHz) = 167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  806. K7A403600B (Samsung) - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  807. K7A403600B-QC (Samsung) - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  808. K7A403600B-QC(I)16/14 (Samsung) - 128Kx36 Bit Synchronous Pipelined Burst SRAMThe K7A403600B, K7A403200B and K7A401800B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  809. K7A403600B-QC14 (Samsung) - K7A403600B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  810. K7A403600B-QC16 (Samsung) - K7A403600B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  811. K7A403600B-QI14 (Samsung) - K7A403600B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  812. K7A403600B-QI16 (Samsung) - K7A403600B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  813. K7A403600M (Samsung) - K7A403600M 128Kx36-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.0,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,175,167,150,138,117 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  814. K7A403601A (Samsung) - K7A403601A 128K X 36-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.0,5.0 ; Speed-tcyc (MHz) = 167,150,138,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  815. K7A403601B (Samsung) - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  816. K7A403601B-QC (Samsung) - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  817. K7A403601B-QC14 (Samsung) - K7A403601B 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E2D
  818. K7A403601B-QC16 (Samsung) - K7A403601B 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E2D
  819. K7A403601B-QI14 (Samsung) - K7A403601B 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E2D
  820. K7A403601B-QI16 (Samsung) - K7A403601B 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E2D
  821. K7A403601M (Samsung) - K7A403601M 128K X 36-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.5,5.0,5.0 ; Speed-tcyc (MHz) = 138,117,100 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E2D
  822. K7A403609A (Samsung) - 128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM
  823. K7A403609B (Samsung) - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  824. K7A403609B-QC (Samsung) - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  825. K7A403609B-QC(I)30/27/25/22/20 (Samsung) - 128Kx36-Bit Synchronous Pipelined Burst SRAMThe K7A403609B, K7A403209B and K7A401809B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  826. K7A403609B-QC20 (Samsung) - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  827. K7A403609B-QC22 (Samsung) - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  828. K7A403609B-QC25 (Samsung) - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  829. K7A403609B-QC27 (Samsung) - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  830. K7A403609B-QC30 (Samsung) - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  831. K7A403609B-QI20 (Samsung) - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  832. K7A403609B-QI22 (Samsung) - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  833. K7A403609B-QI25 (Samsung) - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  834. K7A403609B-QI27 (Samsung) - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  835. K7A403609B-QI30 (Samsung) - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  836. K7A403644A (Samsung) - K7A403644A 128K X 36-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 3.8,4.0 ; Speed-tcyc (MHz) = 150,138 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  837. K7A403649A (Samsung) - K7A403649A 128K X 36-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.2,2.5,2.8,3.1,3.5 ; Speed-tcyc (MHz) = 275,250,225,200,167 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  838. K7A801800 (Samsung) - 256kx36 & 512kx18-bit Synchronous Pipelined Burst Sram
  839. K7A801800A (Samsung) - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  840. K7A801800A-10 (Samsung) - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  841. K7A801800A-14 (Samsung) - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  842. K7A801800A-15 (Samsung) - 256kx36 & 512kx18-bit Synchronous Pipelined Burst Sram
  843. K7A801800A-16 (Samsung) - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  844. K7A801800B (Samsung) - 256Kx36 & 512Kx18 Synchronous SRAM
  845. K7A801800B-QC(I)16/14 (Samsung) - 512Kx18-Bit Synchronous Pipelined Burst SRAMhe K7A803600B and K7A801800B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  846. K7A801800B-QC14 (Samsung) - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  847. K7A801800B-QC16 (Samsung) - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  848. K7A801800B-QI14 (Samsung) - K7A801800B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  849. K7A801800B-QI16 (Samsung) - K7A801800B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  850. K7A801800M (Samsung) - 256kx36 & 512kx18 Synchronous Sram
  851. K7A801801A (Samsung) - K7A801801A 256Kx36 & 512Kx18 Synchronous SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.0,4.2,4.5 ; Speed-tcyc (MHz) = 167,150,138,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  852. K7A801801B (Samsung) - K7A801801B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  853. K7A801801B-QC14 (Samsung) - K7A801801B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  854. K7A801801B-QC16 (Samsung) - K7A801801B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  855. K7A801801B-QI14 (Samsung) - K7A801801B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  856. K7A801801B-QI16 (Samsung) - K7A801801B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  857. K7A801801M (Samsung) - 256kx36 & 512kx18 Synchronous Sram
  858. K7A801808B (Samsung) - K7A801808B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  859. K7A801808B-QC20 (Samsung) - K7A801808B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  860. K7A801808B-QC25 (Samsung) - K7A801808B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  861. K7A801808B-QI20 (Samsung) - K7A801808B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  862. K7A801808B-QI25 (Samsung) - K7A801808B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  863. K7A801809A (Samsung) - 256kx36 & 512kx18 Synchronous Sram
  864. K7A801809B (Samsung) - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  865. K7A801809B-QC20 (Samsung) - K7A803609B / K7A803209B / K7A801809B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  866. K7A801809B-QC25 (Samsung) - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  867. K7A801809B-QCI25 (Samsung) - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  868. K7A801809B-QI20 (Samsung) - K7A803609B / K7A803209B / K7A801809B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  869. K7A801809B-QI25 (Samsung) - K7A803609B / K7A803209B / K7A801809B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  870. K7A803200B (Samsung) - K7A803200B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  871. K7A803200B-QC14 (Samsung) - K7A803200B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  872. K7A803200B-QC16 (Samsung) - K7A803200B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  873. K7A803200B-QI14 (Samsung) - K7A803200B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  874. K7A803200B-QI16 (Samsung) - K7A803200B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  875. K7A803201B (Samsung) - K7A803201B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E2D
  876. K7A803201B-QC14 (Samsung) - K7A803201B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E2D
  877. K7A803201B-QC16 (Samsung) - K7A803201B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E2D
  878. K7A803201B-QI14 (Samsung) - K7A803201B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E2D
  879. K7A803201B-QI16 (Samsung) - K7A803201B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E2D
  880. K7A803208B (Samsung) - K7A803208B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  881. K7A803208B-QC20 (Samsung) - K7A803208B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  882. K7A803208B-QC25 (Samsung) - K7A803208B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  883. K7A803208B-QI20 (Samsung) - K7A803208B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  884. K7A803208B-QI25 (Samsung) - K7A803208B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  885. K7A803209B (Samsung) - K7A803209B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  886. K7A803209B-QC20 (Samsung) - K7A803209B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  887. K7A803209B-QC25 (Samsung) - K7A803209B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  888. K7A803209B-QI20 (Samsung) - K7A803209B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  889. K7A803209B-QI25 (Samsung) - K7A803209B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  890. K7A803600A (Samsung) - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  891. K7A803600A-10 (Samsung) - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  892. K7A803600A-14 (Samsung) - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  893. K7A803600A-15 (Samsung) - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  894. K7A803600A-16 (Samsung) - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  895. K7A803600B (Samsung) - 256Kx36 & 512Kx18 Synchronous SRAM
  896. K7A803600B-QC(I)16/14 (Samsung) - 256Kx36 Bit Synchronous Pipelined Burst SRAMThe K7A803600B and K7A801800B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  897. K7A803600B-QC14 (Samsung) - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  898. K7A803600B-QC16 (Samsung) - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  899. K7A803600B-QI14 (Samsung) - K7A803600B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  900. K7A803600B-QI16 (Samsung) - K7A803600B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  901. K7A803600M (Samsung) - 256Kx36 & 512Kx18 Synchronous SRAM
  902. K7A803601A (Samsung) - K7A803601A 256Kx36 & 512Kx18 Synchronous SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.0,4.2,4.5 ; Speed-tcyc (MHz) = 167,150,138,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  903. K7A803601B (Samsung) - K7A803601B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  904. K7A803601B-QC14 (Samsung) - K7A803601B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  905. K7A803601B-QC16 (Samsung) - K7A803601B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  906. K7A803601B-QI14 (Samsung) - K7A803601B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  907. K7A803601B-QI16 (Samsung) - K7A803601B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  908. K7A803601M (Samsung) - 256Kx36 & 512Kx18 Synchronous SRAM
  909. K7A803608B (Samsung) - K7A803608B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  910. K7A803608B-QC20 (Samsung) - K7A803608B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  911. K7A803608B-QC25 (Samsung) - K7A803608B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  912. K7A803608B-QI20 (Samsung) - K7A803608B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  913. K7A803608B-QI25 (Samsung) - K7A803608B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  914. K7A803609A (Samsung) - 256Kx36 & 512Kx18 Synchronous SRAM
  915. K7A803609B (Samsung) - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  916. K7A803609B-QC(I)25 (Samsung) - 256Kx36-Bit Synchronous Pipelined Burst SRAMThe K7A803609B and K7A801809B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 256K(512K) words of 36(18) bits and integrates address and control registers,A 2-bit burst address counter and added some new functions for high performance cache RAM applications;
  917. K7A803609B-QC20 (Samsung) - K7A803209B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  918. K7A803609B-QC25 (Samsung) - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  919. K7A803609B-QI20 (Samsung) - K7A803209B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  920. K7A803609B-QI25 (Samsung) - K7A803209B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  921. K7A803644B (Samsung) - K7A803644B 256Kx36-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  922. K7B161825A (Samsung) - 512Kx36 & 1Mx18 Synchronous SRAM
  923. K7B161825A-FC65 (Samsung) - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  924. K7B161825A-FC75 (Samsung) - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  925. K7B161825A-FC85 (Samsung) - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  926. K7B161825A-FI65 (Samsung) - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  927. K7B161825A-FI75 (Samsung) - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  928. K7B161825A-FI85 (Samsung) - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  929. K7B161825A-QC(I)75/85 (Samsung) - 512Kx36 -Bit Synchronous Burst SRAMThe K7B163625A and K7B161825A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  930. K7B161825A-QC65 (Samsung) - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  931. K7B161825A-QC75 (Samsung) - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  932. K7B161825A-QC85 (Samsung) - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  933. K7B161825A-QI65 (Samsung) - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  934. K7B161825A-QI75 (Samsung) - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  935. K7B161825A-QI85 (Samsung) - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  936. K7B161825M (Samsung) - K7B161825M 512K X 36 & 1M X 18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 8.5,9.0,10.0 ; Speed-tcyc (MHz) = 100,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP,119BGA ; Production Status = Eol ; Comments = -
  937. K7B161835B (Samsung) - 1Mx18-Bit Synchronous Burst SRAMThe K7B161835B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  938. K7B161835B-PI75 (Samsung) - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  939. K7B161835B-Q(P)C(I)75 (Samsung) - 1Mx18-Bit Synchronous Burst SRAMThe K7B161835B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  940. K7B163225A (Samsung) - K7B163225A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  941. K7B163225A-QC65 (Samsung) - K7B163225A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  942. K7B163225A-QC75 (Samsung) - K7B163225A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  943. K7B163225A-QC85 (Samsung) - K7B163225A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  944. K7B163225A-QI65 (Samsung) - K7B163225A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  945. K7B163225A-QI75 (Samsung) - K7B163225A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  946. K7B163225A-QI85 (Samsung) - K7B163225A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  947. K7B163625A (Samsung) - 512Kx36 & 1Mx18 Synchronous SRAM
  948. K7B163625A-FC65 (Samsung) - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  949. K7B163625A-FC75 (Samsung) - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  950. K7B163625A-FC85 (Samsung) - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  951. K7B163625A-FI65 (Samsung) - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  952. K7B163625A-FI75 (Samsung) - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  953. K7B163625A-FI85 (Samsung) - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  954. K7B163625A-QC(I)75/85 (Samsung) - 1Mx18-Bit Synchronous Burst SRAMThe K7B163625A and K7B161825A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  955. K7B163625A-QC65 (Samsung) - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  956. K7B163625A-QC75 (Samsung) - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  957. K7B163625A-QC85 (Samsung) - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  958. K7B163625A-QI65 (Samsung) - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  959. K7B163625A-QI75 (Samsung) - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  960. K7B163625A-QI85 (Samsung) - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  961. K7B163625M (Samsung) - K7B163625M 512K X 36 & 1M X 18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 8.5,9.0 ; Speed-tcyc (MHz) = 100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP,119BGA ; Production Status = Eol ; Comments = -
  962. K7B163635B (Samsung) - 512Kx36-Bit Synchronous Burst SRAMThe K7B161835B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  963. K7B163635B-PI75 (Samsung) - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  964. K7B163635B-Q(P)C(I)75 (Samsung) - 512Kx36-Bit Synchronous Burst SRAMThe K7B161835B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  965. K7B201825A (Samsung) - K7B201825A 128K X 18-Bit Synchronous Burst SRAM ; Organization = 128Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.0,9.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = TQFP ; Production Status = Eol ; Comments = Design is Not Recommended
  966. K7B201825B (Samsung) - K7B201825B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  967. K7B201825B-QC65 (Samsung) - K7B201825B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  968. K7B201825B-QC75 (Samsung) - K7B201825B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  969. K7B201825B-QC85 (Samsung) - K7B201825B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  970. K7B201825B-QI65 (Samsung) - K7B201825B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  971. K7B201825B-QI75 (Samsung) - K7B201825B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  972. K7B201825B-QI85 (Samsung) - K7B201825B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  973. K7B203225B (Samsung) - K7B203225B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  974. K7B203225B-QC65 (Samsung) - K7B203225B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  975. K7B203225B-QC75 (Samsung) - K7B203225B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  976. K7B203225B-QC80 (Samsung) - K7B203225B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  977. K7B203225B-QI65 (Samsung) - K7B203225B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  978. K7B203225B-QI75 (Samsung) - K7B203225B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  979. K7B203225B-QI80 (Samsung) - K7B203225B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  980. K7B203625A (Samsung) - K7B203625A 64K X 36-Bit Synchronous Burst SRAM ; Organization = 64Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.0,9.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = TQFP ; Production Status = Eol ; Comments = Design is Not Recommended
  981. K7B203625B (Samsung) - K7B203625B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  982. K7B203625B-QC65 (Samsung) - K7B203625B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  983. K7B203625B-QC75 (Samsung) - K7B203625B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  984. K7B203625B-QC80 (Samsung) - K7B203625B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  985. K7B203625B-QI65 (Samsung) - K7B203625B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  986. K7B203625B-QI75 (Samsung) - K7B203625B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  987. K7B203625B-QI80 (Samsung) - K7B203625B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  988. K7B321825M (Samsung) - 1Mx36 & 2Mx18 Synchronous SRAM
  989. K7B321825M-FC65 (Samsung) - K7B321825M 2Mx18-Bit Synchronous Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  990. K7B321825M-FC75 (Samsung) - K7B321825M 2Mx18-Bit Synchronous Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  991. K7B321825M-FC85 (Samsung) - K7B321825M 2Mx18-Bit Synchronous Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  992. K7B321825M-HC65 (Samsung) - K7B321825M 2Mx18-Bit Synchronous Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  993. K7B321825M-HC75 (Samsung) - K7B321825M 2Mx18-Bit Synchronous Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  994. K7B321825M-HC85 (Samsung) - K7B321825M 2Mx18-Bit Synchronous Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  995. K7B321825M-QC65 (Samsung) - 1Mx36 & 2Mx18 Synchronous SRAM
  996. K7B321825M-QC65 (Samsung) - 1Mx36 & 2Mx18 Synchronous SRAM
  997. K7B321825M-QC65/75 (Samsung) - 1Mx36 Bit Synchronous Pipelined Burst SRAMThe K7A323600M and K7A321800M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.It is organized as 1M(2M) words of 36(18) bits and integrates address and control registers,A 2-bit burst address counter and added some new functions for high performance cache RAM applications; /GW, /BW, /LBO, ZZ. Write cycles are internally self-timed and synchronous.
  998. K7B321825M-QC75 (Samsung) - 1Mx36 & 2Mx18 Synchronous SRAM
  999. K7B321825M-QC75 (Samsung) - 1Mx36 & 2Mx18 Synchronous SRAM
  1000. K7B321825M-QC85 (Samsung) - K7B321825M 2Mx18-Bit Synchronous Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -

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