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Datasheet: L426 (IXYS Corporation)

IGBT Modules

 

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IXYS Corporation
2004 IXYS All rights reserved
1 - 4
MWI 200-06 A8
448
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS reserves the right to change limits, test conditions and dimensions.
Features
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
Advantages
space savings
reduced protection circuits
package designed for wave soldering
Typical Applications
AC motor control
AC servo and robot drives
power supplies
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25C to 150C
600
V
V
GES
20
V
I
C25
T
C
= 25C
225
A
I
C80
T
C
= 80C
155
A
RBSOA
V
GE
=
15 V; R
G
= 1.5
; T
VJ
= 125C
I
CM
= 400
A
Clamped inductive load; L = 100 H
V
CEK
V
CES
t
SC
V
CE
= V
CES
; V
GE
=
15 V; R
G
= 1.5
; T
VJ
= 125C
10
s
(SCSOA)
non-repetitive
P
tot
T
C
= 25C
675
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 200 A; V
GE
= 15 V; T
VJ
= 25C
2.0
2.5
V
T
VJ
= 125C
2.3
V
V
GE(th)
I
C
= 4 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25C
1.8
mA
T
VJ
= 125C
1.5
mA
I
GES
V
CE
= 0 V; V
GE
=
20 V
400
nA
t
d(on)
180
ns
t
r
50
ns
t
d(off)
300
ns
t
f
40
ns
E
on
4.6
mJ
E
off
6.3
mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
9.0
nF
Q
Gon
V
CE
= 300 V; V
GE
= 15 V; I
C
= 200 A
670
nC
R
thJC
(per IGBT)
0.18 K/W
Inductive load, T
VJ
= 125C
V
CE
= 300 V; I
C
= 200 A
V
GE
= 15 V; R
G
= 1.5
I
C25
= 225 A
V
CES
= 600 V
V
CE(sat) typ.
= 2.0 V
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13, 21
14, 20
1
2
3
4
7
8
9
10
11
12
5
6
17
19
15
2004 IXYS All rights reserved
2 - 4
MWI 200-06 A8
448
Module
Symbol
Conditions
Maximum Ratings
T
VJ
operating
-40...+125
C
T
JM
+150
C
T
stg
-40...+125
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz
2500
V~
M
d
Mounting torque (M5)
3 - 6
Nm
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
pin-chip
1.8
m
d
S
Creepage distance on surface
10
mm
d
A
Strike distance in air
10
mm
R
thCH
with heatsink compound
0.01
K/W
Weight
300
g
Diodes
Symbol
Conditions
Maximum Ratings
I
F25
T
C
= 25C
260
A
I
F80
T
C
= 80C
165
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 200 A; V
GE
= 0 V; T
VJ
= 25C
1.9
2.1
V
T
VJ
= 125C
1.5
V
I
RM
I
F
= 120 A; di
F
/dt = -1000 A/s; T
VJ
= 125C
56
A
t
rr
V
R
= 300 V; V
GE
= 0 V
100
ns
R
thJC
(per diode)
0.3 K/W
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125C)
V
0
= 1.1 V; R
0
= 6 m
Free wheeling Diode (typ. at T
J
= 125C)
V
0
= 1.1 V; R
0
= 2 m
Thermal Response
IGBT (typ.)
C
th1
= 0.397 J/K; R
th1
= 0.131 K/W
C
th2
= 2.243 J/K; R
th2
= 0.049 K/W
Free wheeling Diode (typ.)
C
th1
= 0.281 J/K; R
th1
= 0.236 K/W
C
th2
= 1.945 J/K; R
th2
= 0.064 K/W
Dimensions in mm (1 mm = 0.0394")
2004 IXYS All rights reserved
3 - 4
MWI 200-06 A8
448
0
200
400
600
800
1000
0
60
120
180
0
20
40
60
0
1
2
3
4
0
50
100
150
200
250
300
0
100
200
300
400
500
600
700
0
3
6
9
12
15
0
1
2
3
4
0
50
100
150
200
250
300
V
CE
V
I
C
V
CE
A
I
C
V
Q
G
-di/dt
V
V
GE
I
RM
t
rr
A/
s
MWI200-06A8
I
RM
t
rr
A
9 V
11 V
A
6
7
8
9
10
11
12
0
100
200
300
400
V
V
GE
A
I
C
0
1
2
0
100
200
300
400
500
600
V
V
F
I
F
A
ns
15 V
T
VJ
= 25C
9 V
11 V
13 V
V
GE
= 17 V
T
VJ
= 125C
T
VJ
= 25C
V
CE
= 20 V
T
VJ
= 125C
T
VJ
= 25C
13 V
V
GE
= 17 V
15 V
T
VJ
= 125C
V
R
= 300 V
I
F
= 120 A
T
VJ
= 125C
nC
V
CE
= 300 V
I
C
= 200 A
Fig. 1
Typ. output characteristics
Fig. 2
Typ. output characteristics
Fig. 3
Typ. transfer characteristics
Fig. 4
Typ. forward characteristics of
free wheeling diode
Fig. 5
Typ. turn on gate charge
Fig. 6
Typ. turn off characteristics of
free wheeling diode
2004 IXYS All rights reserved
4 - 4
MWI 200-06 A8
448
Fig. 11 Reverse biased safe operating area RBSOA
Fig. 12 Typ. transient thermal impedance
Fig. 7
Typ. turn on energy
Fig. 8 Typ. turn off energy
versus collector current
versus collector current
Fig. 9
Typ. turn on energy
Fig.10 Typ. turn off energy
versus gate resistor
versus gate resistor
0
100
200
300
400
0
4
8
12
16
0
100
200
300
400
0
4
8
12
16
0.0001
0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
0
4
8
12
16
20
2
4
6
8
0
4
8
12
16
20
0
4
8
12
16
20
0
100
200
300
400
500
600
700
0
100
200
300
400
500
I
C
A
I
C
A
E
off
E
on
R
G
R
G
V
CE
t
s
mJ
E
on
mJ
E
off
I
CM
K/W
Z
thJC
V
A
mJ
mJ
single pulse
diode
IGBT
MWI200-06A8
R
G
= 1.5
T
VJ
= 125C
V
CE
= 300 V
V
GE
= 15 V
R
G
= 1.5
T
VJ
= 125C
V
CE
= 300 V
V
GE
= 15 V
R
G
= 1.5
T
VJ
= 125C
V
CE
= 300 V
V
GE
= 15 V
I
C
= 200
T
VJ
= 125C
V
CE
= 300 V
V
GE
= 15 V
I
C
= 200
T
VJ
= 125C
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