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Datasheet: l321 (IXYS Corporation)

Converter - Brake - Inverter Module (cbi2)

 

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IXYS Corporation
2001 IXYS All rights reserved
1 - 8
Converter - Brake - Inverter Module
(CBI2)
Input Rectifier Bridge D11 - D16
Symbol
Conditions
Maximum Ratings
V
RRM
1600
V
I
FAV
T
C
= 80C; sine 180
19
A
I
DAVM
T
C
= 80C; rectangular; d = 1/3
18
A
I
FSM
T
VJ
= 25C; t = 10 ms; sine 50 Hz
160
A
P
tot
T
C
= 25C
85
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
F
I
F
= 10 A; T
VJ
= 25C
1.3
1.6
V
T
VJ
= 125C
1.3
V
I
R
V
R
= V
RRM
;
T
VJ
= 25C
0.1
mA
T
VJ
= 125C
1
mA
t
rr
V
R
= 100 V;
I
F
= 10 A; di/dt = -10 A/s
1
s
R
thJC
(per diode)
1.47 K/W
Three Phase
Brake Chopper
Three Phase
Rectifier
Inverter
V
RRM
= 1600V
V
CES
= 1200 V
V
CES
= 1200 V
I
DAVM
= 26 A
I
C25
= 20 A
I
C25
= 20 A
I
FSM
= 160 A
V
CE(sat)
= 2.3 V
V
CE(sat)
= 2.3 V
105
MUBW 10-12 A7
IXYS reserves the right to change limits, test conditions and dimensions.
NTC
D11
D13
D15
D12
D14
D16
1
2
3
D7
T7
T1
D1
T3
D3
T2
T4
T6
T5
D4
D2
D6
D5
21
22
7
6
4
5
16
15
18
17
20
19
11
10
23
24
14
8
9
12
13
Application: AC motor drives with
q
Input from single or three phase grid
q
Three phase synchronous or
asynchronous motor
q
electric braking operation
Features
q
High level of integration - only one power
semiconductor module required for the
whole drive
q
Fast rectifier diodes for enhanced EMC
behaviour
q
NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
ruggedness
q
Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
q
Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
q
Temperature sense included
2001 IXYS All rights reserved
2 - 8
MUBW 10-12 A7
Output Inverter T1 - T6
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25C to 150C
1200
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25C
20
A
I
C80
T
C
= 80C
15
A
RBSOA
V
GE
=
15 V; R
G
= 82
; T
VJ
= 125C
I
CM
= 20
A
Clamped inductive load; L = 100 H
V
CEK
V
CES
t
SC
V
CE
= 720 V; V
GE
=
15 V; R
G
= 82
; T
VJ
= 125C
10
s
(SCSOA)
non-repetitive
P
tot
T
C
= 25C
105
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 10 A; V
GE
= 15 V; T
VJ
= 25C
2.3
2.7
V
T
VJ
= 125C
2.7
V
V
GE(th)
I
C
= 0.4 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25C
0.6
mA
T
VJ
= 125C
0.6
mA
I
GES
V
CE
= 0 V; V
GE
=
20 V
200
nA
t
d(on)
50
ns
t
r
40
ns
t
d(off)
290
ns
t
f
60
ns
E
on
1.2
mJ
E
off
1.1
mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
600
pF
Q
Gon
V
CE
= 600V; V
GE
= 15 V; I
C
= 10 A
45
nC
R
thJC
(per IGBT)
1.2 K/W
Inductive load, T
VJ
= 125C
V
CE
= 600 V; I
C
= 10 A
V
GE
= 15 V; R
G
= 82
Output Inverter D1 - D6
Symbol
Conditions
Maximum Ratings
I
F25
T
C
= 25C
17
A
I
F80
T
C
= 80C
11
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 10 A; V
GE
= 0 V; T
VJ
= 25C
2.9
V
T
VJ
= 125C
1.9
V
I
RM
I
F
= 10 A; di
F
/dt = -400 A/s; T
VJ
= 125C
13
A
t
rr
V
R
= 600 V; V
GE
= 0 V
110
ns
R
thJC
(per diode)
3.2 K/W
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at T
J
= 125C)
V
0
= 1.11 V; R
0
= 19 m
T1 - T6 / D1 - D6
IGBT (typ. at V
GE
= 15 V; T
J
= 125C)
V
0
= 1.32V; R
0
= 131 m
Free Wheeling Diode (typ. at T
J
= 125C)
V
0
= 1.39 V; R
0
= 56 m
T7 / D7
IGBT (typ. at V
GE
= 15 V; T
J
= 125C)
V
0
= 1.32 V; R
0
= 131 m
Free Wheeling Diode (typ. at T
J
= 125C)
V
0
= 1.39 V; R
0
= 56 m
Thermal Response
D11 - D16
Rectifier Diode (typ.)
C
th1
= 0.093 J/K; R
th1
= 1.212 K/W
C
th2
= 0.778 J/K; R
th2
= 0.258K/W
T1 - T6 / D1 - D6
IGBT (typ.)
C
th1
= 0.09 J/K; R
th1
= 0.954 K/W
C
th2
= 0.809J/K; R
th2
= 0.246 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.043 J/K; R
th1
= 2.738 K/W
C
th2
= 0.54 J/K; R
th2
= 0.462 K/W
T7 / D7
IGBT (typ.)
C
th1
= 0.09 J/K; R
th1
= 0.954 K/W
C
th2
= 0.809 J/K; R
th2
= 0.246 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.043 J/K; R
th1
= 2.738 K/W
C
th2
= 0.54 J/K; R
th2
= 0.462 K/W
2001 IXYS All rights reserved
3 - 8
MUBW 10-12 A7
Brake Chopper T7
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25C to 150C
1200
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25C
20
A
I
C80
T
C
= 80C
15
A
RBSOA
V
GE
=
15 V; R
G
= 82
; T
VJ
= 125C
I
CM
= 20
A
Clamped inductive load; L = 100 H
V
CEK
V
CES
t
SC
V
CE
= 720 V; V
GE
=
15 V; R
G
= 82
; T
VJ
= 125C
10
s
(SCSOA)
non-repetitive
P
tot
T
C
= 25C
105
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 10 A; V
GE
= 15 V; T
VJ
= 25C
2.3
2.7
V
T
VJ
= 125C
2.7
V
V
GE(th)
I
C
= 0.4 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25C
0.5
mA
T
VJ
= 125C
0.3
mA
I
GES
V
CE
= 0 V; V
GE
=
20 V
200
nA
t
d(on)
50
ns
t
r
40
ns
t
d(off)
290
ns
t
f
60
ns
E
on
1.2
mJ
E
off
1.1
mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MH z
600
pF
Q
Gon
V
CE
= 600 V; V
GE
= 15 V; I
C
= 10 A
45
nC
R
thJC
1.2 K/W
Brake Chopper D7
Symbol
Conditions
Maximum Ratings
V
RRM
T
VJ
= 25C to 150C
1200
V
I
F25
T
C
= 25C
17
A
I
F80
T
C
= 80C
11
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 10 A; T
VJ
= 25C
2.9
V
T
VJ
= 125C
1.9
V
I
R
V
R
= V
RRM
;
T
VJ
= 25C
0.06
mA
T
VJ
= 125C
0.07
mA
I
RM
I
F
= 10 A; di
F
/dt = -400 A/s; T
VJ
= 125C
13
A
t
rr
V
R
= 600 V
110
ns
R
thJC
3.2 K/W
Inductive load, T
VJ
= 125C
V
CE
= 600 V; I
C
= 10 A
V
GE
= 15 V; R
G
= 82
2001 IXYS All rights reserved
4 - 8
MUBW 10-12 A7
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
25
T = 25C
4.75
5.0
5.25
k
B
25/50
3375
K
Module
Symbol
Conditions
Maximum Ratings
T
VJ
Operating
-40...+125
C
T
JM
150
C
T
stg
-40...+125
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz
2500
V~
M
d
Mounting torque (M5)
2.7 - 3.3
Nm
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
pin-chip
5
m
d
S
Creepage distance on surface
6
mm
d
A
Strike distance in air
6
mm
R
thCH
with heatsink compound
0.02
K/W
Weight
180
g
Dimensions in mm (1 mm = 0.0394")
2001 IXYS All rights reserved
5 - 8
MUBW 10-12 A7
0.001
0.01
0.1
1
0
20
40
60
80
100
2
3
4
5 6 7 8 9
1
10
10
1
10
2
10
3
0.0
0.4
0.8
1.2
1.6
2.0
0
10
20
30
40
50
0
20
40
60
80
0
100
200
300
400
500
0
20
40
60
80 100 120 140
0.001
0.01
0.1
1
10
0.0
0.4
0.8
1.2
1.6
I
2
t
I
FSM
I
F
A
V
F
t
s
t
ms
P
tot
W
I
d(AV)M
A
T
amb
t
s
K/W
A
2
s
0
20 40 60 80 100 120 140
0
10
20
30
40
50
60
I
d(AV)
T
C
A
V
A
C
C
DWF N9-16
Z
thJC
T
VJ
= 125C
T
VJ
= 25C
T
VJ
= 45C
T
VJ
= 150C
T
VJ
= 45C
T
VJ
= 150C
50Hz, 80% V
RRM
R
thA
:
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W
1 K/W
2 K/W
5 K/W
Fig. 4 Power dissipation versus direct output current and ambient temperature, sin
1
8
0
Fig. 5 Max. forward current versus
case temperature
Fig. 6 Transient thermal impedance junction to case
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current
Fig. 3 I
2
t versus time per diode
Input Rectifier Bridge D11 - D16
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