© 2000 IXYS All rights reserved
1 - 2
Features
· Thyristor controller for AC (circuit
W3C acc. to IEC) for mains requency
· Package with metal base plate
· Isolation voltage 3000 V~
· Planar passivated chips
· UL applied
· ¼" fast-on power terminals
Applications
· Switching and control of
three phase AC circuits
· Softstart AC motor controller
· Solid state switches
· Light and temperature control
Advantages
· Easy to mount with two screws
· Space and weight savings
· Improved temperature and power
cycling capability
· High power density
· Light weight and compact
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
800
800
VWO 36-08io7
1200
1200
VWO 36-12io7
1400
1400
VWO 36-14io7
1600
1600
VWO 36-16io7
Three Phase
AC Controller Modules
Symbol
Test Conditions
Maximum Ratings
I
RMS
T
K
= 85
°
C, 50 - 400 Hz (per phase)
39
A
I
TRMS
T
VJ
= T
VJM
28
A
I
TAVM
T
K
= 85
°
C; (180
°
sine)
18
A
I
TSM
T
VJ
= 45
°
C;
t = 10 ms (50 Hz), sine
320
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
350
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
280
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
310
A
I
2
t
T
VJ
= 45
°
C
t = 10 ms (50 Hz), sine
500
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
520
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
390
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
400
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 20 A
150
A/
m
s
f =50 Hz, t
P
=200
m
s
V
D
= 2/3 V
DRM
I
G
= 0.3 A
non repetitive, I
T
= I
TAVM
500
A/
m
s
di
G
/dt = 0.3 A/
m
s
(dv/dt)
cr
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
1000
V/
m
s
R
GK
=
¥
; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
t
p
=
30
m
s
10
W
I
T
= I
TAVM
t
p
= 300
m
s
5
W
P
GAVM
0.5
W
V
RGM
10
V
T
VJ
-40...+125
°
C
T
VJM
125
°
C
T
stg
-40...+125
°
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
£
1 mA
t = 1 s
3000
V~
M
d
Mounting torque (M5)
5
±
15 %
Nm
(10-32 UNF)
44
±
15 %
lb.in.
Weight
typ.
110
g
Preliminary data
VWO 36
Data according to IEC 60747 refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
I
RMS
= 3x 39 A
V
RRM
= 800-1600 V
14 1
16
2
17
3
7
10
8
11
9
13
© 2000 IXYS All rights reserved
2 - 2
Dimensions in mm (1 mm = 0.0394")
Symbol
Test Conditions
Characteristic Values
I
D
, I
R
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
£
5
mA
V
T
I
T
= 45 A; T
VJ
= 25
°
C
£
1.45
V
V
T0
For power-loss calculations only
0.85
V
r
T
13
m
W
V
GT
V
D
= 6 V;
T
VJ
= 25
°
C
£
1.0
V
T
VJ
= -40
°
C
£
1.2
V
I
GT
V
D
= 6 V;
T
VJ
= 25
°
C
£
65
mA
T
VJ
= -40
°
C
£
80
mA
V
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
£
0.2
V
I
GD
£
5
mA
I
L
T
VJ
= 25
°
C; t
P
= 10
m
s
£
150
mA
I
G
= 0.3 A; di
G
/dt = 0.3 A/
m
s
I
H
T
VJ
= 25
°
C; V
D
= 6 V; R
GK
=
¥
£
100
mA
t
gd
T
VJ
= 25
°
C; V
D
= 1/2 V
DRM
£
2
m
s
I
G
= 0.3 A; di
G
/dt = 0.3 A/
m
s
t
q
T
VJ
= T
VJM
; I
T
= 20 A, t
P
= 200
m
s; di/dt = -10 A/
m
s
typ.
150
m
s
V
R
= 100 V; dv/dt = 15 V/
m
s; V
D
= 2/3 V
DRM
R
thJC
per thyristor; sine 180
°
el
1.3
K/W
per module
0.216
K/W
R
thJK
per thyristor; sine 180
°
el
1.5
K/W
per module
0.25
K/W
d
S
Creeping distance on surface
16.1
mm
d
A
Creepage distance in air
6.0
mm
a
Max. allowable acceleration
50
m/s
2
VWO 36
2,8 x 0,8
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