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Datasheet: L081 (IXYS Corporation)

Thyristor Modules Thyristor/diode Modules

 

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IXYS Corporation
2000 IXYS All rights reserved
1 - 4
I
TRMS
= 2x 300 A
I
TAVM
= 2x 190 A
V
RRM
= 800-1800 V
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
Version 1
Version 1
900
800
MCC 162-08io1
MCD 162-08io1
1300
1200
MCC 162-12io1
MCD 162-12io1
1500
1400
MCC 162-14io1
MCD 162-14io1
1700
1600
MCC 162-16io1
MCD 162-16io1
1900
1800
MCC 162-18io1
MCD 162-18io1
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
Features
q
International standard package
q
Direct copper bonded Al
2
O
3
-ceramic
base plate
q
Planar passivated chips
q
Isolation voltage 3600 V~
q
UL registered, E 72873
q
Keyed gate/cathode twin pins
Applications
q
Motor control
q
Power converter
q
Heat and temperature control for
industrial furnaces and chemical
processes
q
Lighting control
q
Contactless switches
Advantages
q
Space and weight savings
q
Simple mounting
q
Improved temperature and power
cycling
q
Reduced protection circuits
Symbol
Test Conditions
Maximum Ratings
I
TRMS
, I
FRMS
T
VJ
= T
VJM
300
A
I
TAVM
, I
FAVM
T
C
= 80
C; 180
sine
190
A
T
C
= 85
C; 180
sine
181
A
I
TSM
, I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
6000
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
6400
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
5250
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
5600
A
i
2
dt
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
180 000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
170 000
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
137 000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
128 000
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 500 A
150
A/
m
s
f =50 Hz, t
P
=200
m
s
V
D
= 2/3 V
DRM
I
G
= 0.5 A
non repetitive, I
T
= 500 A
500
A/
m
s
di
G
/dt = 0.5 A/
m
s
(dv/dt)
cr
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
1000
V/
m
s
R
GK
=
; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
t
P
=
30
m
s
120
W
I
T
= I
TAVM
t
P
= 500
m
s
60
W
P
GAV
8
W
V
RGM
10
V
T
VJ
-40...+125
C
T
VJM
125
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque (M6)
2.25-2.75/20-25 Nm/lb.in.
Terminal connection torque (M6)
4.5-5.5/40-48 Nm/lb.in.
Weight
Typical including screws
125
g
MCC 162
MCD 162
Thyristor Modules
Thyristor/Diode Modules
1
2
3
6 7
5
4
MCD
MCC
3
6 7 1
5 4 2
3
1
5 4 2
2000 IXYS All rights reserved
2 - 4
Symbol
Test Conditions
Characteristic Values
I
RRM
, I
DRM
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
10
mA
V
T
, V
F
I
T
, I
F
= 300 A; T
VJ
= 25
C
1.25
V
V
T0
For power-loss calculations only (T
VJ
= 125
C)
0.88
V
r
T
1.15
m
W
V
GT
V
D
= 6 V;
T
VJ
= 25
C
2.5
V
T
VJ
= -40
C
2.6
V
I
GT
V
D
= 6 V;
T
VJ
= 25
C
150
mA
T
VJ
= -40
C
200
mA
V
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
0.2
V
I
GD
10
mA
I
L
T
VJ
= 25
C; t
P
= 30
m
s; V
D
= 6 V
300
mA
I
G
= 0.5 A; di
G
/dt = 0.5 A/
m
s
I
H
T
VJ
= 25
C; V
D
= 6 V; R
GK
=
200
mA
t
gd
T
VJ
= 25
C; V
D
= 1/2 V
DRM
2
m
s
I
G
= 0.5 A; di
G
/dt = 0.5 A/
m
s
t
q
T
VJ
= T
VJM
; I
T
= 300 A, t
P
= 200
m
s; -di/dt = 10 A/
m
s typ.
150
m
s
V
R
= 100 V; dv/dt = 20 V/
m
s; V
D
= 2/3 V
DRM
Q
S
T
VJ
= T
VJM
; I
T
, I
F
= 300 A, -di/dt = 50 A/
m
s
550
m
C
I
RM
235
A
R
thJC
per thyristor/diode; DC current
0.155
K/W
per module
other values
0.0775
K/W
R
thJK
per thyristor/diode; DC current
see Fig. 8/9
0.225
K/W
per module
0.1125
K/W
d
S
Creepage distance on surface
12.7
mm
d
A
Strike distance through air
9.6
mm
a
Maximum allowable acceleration
50
m/s
2
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L
(L = Left for pin pair 4/5)
UL 758, style 1385,
Type ZY 180R
(R = right for pin pair 6/7)
CSA class 5851, guide 460-1-1
Dimensions in mm (1 mm = 0.0394")
MCC Version 1
MCD Version 1
MCC 162
MCD 162
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
2000 IXYS All rights reserved
3 - 4
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 4
i
2
dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 5
Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
MCC 162
MCD 162
2000 IXYS All rights reserved
4 - 4
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
Fig. 9 Transient thermal impedance
junction to
heatsink
(per
thyristor
or diode)
R
thJC
for various conduction angles d:
d
R
thJC
(K/W)
DC
0.155
180
0.167
120
0.176
60
0.197
30
0.227
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.0072
0.001
2
0.0188
0.08
3
0.129
0.2
R
thJK
for various conduction angles d:
d
R
thJK
(K/W)
DC
0.225
180
0.237
120
0.246
60
0.267
30
0.297
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.0072
0.001
2
0.0188
0.08
3
0.129
0.2
4
0.07
1.0
MCC 162
MCD 162
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