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Datasheet: L048 (IXYS Corporation)

Three Phase Half Controlled Rectifier Bridge, B6HK

 

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IXYS Corporation
2000 IXYS All rights reserved
1 - 2
I
dAVM
= 110/167 A
V
RRM
= 1200-1600 V
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
1300
1200
VVZ 110-12io7
VVZ 175-12io7
1500
1400
VVZ 110-14io7
VVZ 175-14io7
1700
1600
VVZ 175-16io7
Features
q
Package with screw terminals
q
Isolation voltage 3000 V~
q
Planar passivated chips
q
UL registered E72873
Applications
q
Input rectifier for PWM converter
q
Input rectifier for switch mode power
supplies (SMPS)
q
Softstart capacitor charging
Advantages
q
Easy to mount with two screws
q
Space and weight savings
q
Improved temperature and power
cycling
Symbol
Test Conditions
Maximum Ratings
VVZ 110
VVZ 175
I
dAV
T
C
= 85
C; module
110
167
A
I
FRMS
, I
TRMS
per leg
58
89
A
I
FSM
, I
TSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
1150
1500
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
1230
1600
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
1000
1350
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
1070
1450
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
6600
11200
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
6280
10750
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
5000
9100
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
4750
8830
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 50 A
150
A/
m
s
f =400 Hz, t
P
=200
m
s
V
D
= 2/3 V
DRM
I
G
= 0.3 A,
non repetitive,
500
A/
m
s
di
G
/dt = 0.3 A/
m
s,
I
T
= 1/3 I
dAV
(dv/dt)
cr
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
1000
V/
m
s
R
GK
=
; method 1 (linear voltage rise)
V
RGM
10
V
P
GM
T
VJ
= T
VJM
t
p
=
30
m
s
10
W
I
T
= I
TAVM
t
p
= 500
m
s
5
W
t
p
=
10 ms
1
W
P
GAVM
0.5
W
T
VJ
-40...+125
C
T
VJM
125
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque (M6)
5
15 %
Nm
Terminal connection torque (M6)
5
15 %
Nm
Weight
typ.
300
g
VVZ 110
VVZ 175
Three Phase Half Controlled
Rectifier Bridge, B6HK
A
+
B
-
1
2
3
E
~
D
~
C
~
A
B
E
D
C
2
3
1
2000 IXYS All rights reserved
2 - 2
0
50
100
150
0
20
40
60
80
100
120
A
I
dAV
C
T
C
10
-3
10
-2
10
-1
10
0
10
1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
10
-3
10
-2
10
-1
10
0
10
1
100
200
300
400
500
600
700
800
900
A
s
I
FSM
t
s
t
K/W
Z
thJC
50 Hz
80% V
RRM
T
VJ
= 45C
T
VJ
= 125C
Symbol
Test Conditions
Characteristic Values
VVZ 110
VVZ 175
I
R
, I
D
V
R
= V
RRM
; V
D
= V
DRM
T
VJ
= T
VJM
5
mA
T
VJ
= 25
C
0.3
mA
V
F
, V
T
I
F
, I
T
= 200 A, T
VJ
= 25
C
1.75
1.57
V
V
T0
For power-loss calculations only
0.85
0.85
V
r
T
(T
VJ
= 125
C)
6
3.5
m
W
V
GT
V
D
= 6 V;
T
VJ
= 25
C
1.5
V
T
VJ
= -40
C
1.6
V
I
GT
V
D
= 6 V;
T
VJ
= 25
C
100
mA
T
VJ
= -40
C
200
mA
V
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
0.2
V
I
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
5
mA
I
L
I
G
= 0.3 A; t
G
= 30
m
s
T
VJ
= 25
C
450
mA
di
G
/dt = 0.3 A/
m
s
I
H
T
VJ
= 25
C; V
D
= 6 V; R
GK
=
200
mA
t
gd
T
VJ
= 25
C; V
D
= 1/2 V
DRM
2
m
s
I
G
= 0.3 A; di
G
/dt = 0.3 A/
m
s
R
thJC
per thyristor (diode); DC current
0.65
0.46
K/W
per module
0.108
0.077
K/W
R
thJH
per thyristor (diode); DC current
0.8
0.55
K/W
per module
0.133
0.092
K/W
d
S
Creeping distance on surface
10
mm
d
A
Creepage distance in air
9.4
mm
a
Max. allowable acceleration
50
m/s
2
M6x10
7
3
30
27
6.
5
6.
5
C ~
D ~
E ~
A +
B -
54
15
12
25
66
26
26
72
80
94
4
5
6
3
1
2
Dimensions in mm (1 mm = 0.0394")
VVZ 110
VVZ 175
Fig. 3 Surge overload current
I
FSM
: Crest value, t: duration
Fig. 1 Gate trigger characteristics
Fig. 2
DC output current at case
temperature
Fig. 4 Transient thermal impedance
junction to case (per leg)
VVZ 110
VVZ 110
VVZ 110
1
10
100
1000
0.1
1
10
I
G
V
G
mA
1: I
GT
, T
VJ
= 125C
2: I
GT
, T
VJ
= 25C
3: I
GT
, T
VJ
= -40C
V
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
I
GD
, T
VJ
= 125C
4
2
1
5
6
3
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