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Datasheet: L016 (IXYS Corporation)

High Power Diode Modules

 

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IXYS Corporation
2000 IXYS All rights reserved
1 - 3
Symbol
Test Conditions
Maximum Ratings
I
FRMS
T
VJ
= T
VJM
A
I
FAVM
T
C
= 85
C; 180
sine
A
I
FSM
T
VJ
= 45
C
t = 10 ms (50 Hz)
A
V
R
= 0
t = 8.3 ms (60 Hz)
A
T
VJ
= T
VJM
t = 10 ms (50 Hz)
A
V
R
= 0
t = 8.3 ms (60 Hz)
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz)
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz)
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz)
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz)
A
2
s
T
VJ
C
T
VJM
C
T
stg
C
V
ISOL
50/60 Hz, RMS
t = 1 min
V~
I
ISOL
1 mA
t = 1 s
V~
M
d
Mounting torque (M6)
Nm/lb.in.
Terminal connection torque (M8)
Nm/lb.in.
Weight
Typical including screws
g
Symbol
Test Conditions
Characteristic Values
I
RRM
T
VJ
= T
VJM
; V
R
= V
RRM
mA
V
F
I
F
= A; T
VJ
= 25
C
V
V
T0
For power-loss calculations only (T
VJ
= T
VJM
)
V
r
T
m
W
R
thJC
DC current
K/W
R
thJK
DC current
K/W
d
S
Creeping distance on surface
mm
d
A
Creepage distance in air
mm
a
Maximum allowable acceleration
m/s
2
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
1300
1200
MDO 500-12N1
1500
1400
MDO 500-14N1
1700
1600
MDO 500-16N1
1900
1800
MDO 500-18N1
2100
2000
MDO 500-20N1
2300
2200
MDO 500-22N1
I
FRMS
= 880 A
I
FAVM
= 560 A
V
RRM
= 1200-2200 V
1125000
1062000
845000
813000
13000
14400
0.8
0.38
0.072
0.096
30
1200
1.3
3000
3600
-40...140
140
-40...125
4.5-7/40-62
11-13/97-115
650
21.7
9.6
50
15000
16000
880
560
Features
q
International standard package
q
Direct copper bonded Al
2
O
3
-ceramic
with copper base plate
q
Planar passivated chips
q
Isolation voltage 3600 V~
q
UL registered E 72873
Applications
q
Supplies for DC power equipment
q
DC supply for PWM inverter
q
Field supply for DC motors
q
Battery DC power supplies
Advantages
q
Simple mounting
q
Improved temperature and power
cycling
q
Reduced protection circuits
MDO 500
High Power
Diode Modules
3
2
3
2
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
2000 IXYS All rights reserved
2 - 3
0.001
0.01
0.1
1
0
2000
4000
6000
8000
10000
12000
14000
0
200
400
600
800
0
200
400
600
800
1000
1200
1
10
10
5
10
6
10
7
0
25
50
75
100
125
150
I
2
t
I
FAVM
T
A
T
C
s
t
ms
t
A
2
s
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
800
900
1000
C
80 % V
RRM
T
VJ
= 45C
50 Hz
T
VJ
= 140C
T
VJ
= 140C
T
VJ
= 45C
I
FAVM
W
P
tot
A
C
R
thKA
K/W
0.03
0.07
0.12
0.2
0.3
0.4
0.6
180 sin
120
60
30
DC
180 sin
120
60
30
DC
V
R
= 0V
I
TSM
A
A
0
300
600
900
1200
0
400
800
1200
1600
2000
2400
2800
3200
0
25
50
75
100
125
150
I
dAVM
A
C
4xMDO500
Circuit
B2
T
A
R
thKA
K/W
0.015
0.03
0.04
0.05
0.07
0.01
0.14
P
tot
W
R
L
MDO 500
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
Fig. 2 I
2
t versus time (1-10 ms)
Fig. 3
Maximum forward current
at case temperature
Fig. 4
Power dissipation versus
forward current and ambient
temperature
Fig. 5 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
2000 IXYS All rights reserved
3 - 3
0
300
600
900
1200
1500
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
t
Z
thJK
s
t
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
K/W
Z
thJC
I
dAVM
P
tot
0
25
50
75
100
125
150
A
6xMDO500
Circuit
B6
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.02
0.04
0.06
0.08
0.10
0.12
DC
180
120
60
30
DC
180
120
60
30
C
T
A
W
K/W
s
R
thKA
K/W
0.01
0.02
0.03
0.045
0.06
0.08
0.12
R
thJC
for various conduction angles d:
d
R
thJC
(K/W)
DC
0.072
180
0.0768
120
0.081
60
0.092
30
0.111
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.0035
0.0054
2
0.0186
0.098
3
0.0432
0.54
4
0.0067
12
R
thJK
for various conduction angles d:
d
R
thJK
(K/W)
DC
0.096
180
0.1
120
0.105
60
0.116
30
0.135
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.0035
0.0054
2
0.0186
0.098
3
0.0432
0.54
4
0.0067
12
5
0.024
12
MDO 500
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 7 Transient thermal impedance
junction to case
Fig. 8 Transient thermal impedance
junction to
heatsink
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